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  0.00001 Datasheet PDF File

For 0.00001 Found Datasheets File :: 11340    Search Time::1.515ms    
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    IRF9540N IRF9540 IRF9540NPBF

IRF[International Rectifier]
Part No. IRF9540N IRF9540 IRF9540NPBF
OCR Text ... D VDSS = -100V RDS(on) = 0.117 G S Description Fifth Generation HEXFETs from International Rectifier utilize advanced processi...00001 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impeda...
Description -100V Single P-Channel HEXFET Power MOSFET in a TO-220AB package
Power MOSFET(Vdss=-100V, Rds(on)=0.117ohm, Id=-23A)
Power MOSFET(Vdss=-100V/ Rds(on)=0.117ohm/ Id=-23A)

File Size 121.23K  /  8 Page

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    IRF9952

IRF[International Rectifier]
Part No. IRF9952
OCR Text ... N N E L M O S F E T RDS(on) 0.10 0.25 T o p V iew Recommended upgrade: IRF7309 or IRF7319 Lower profile/smaller equivalent: IRF7509 ...00001 0.0001 0.001 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Trans...
Description Power MOSFET(Vdss= -30V)

File Size 128.20K  /  10 Page

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    IRF9953

IRF[International Rectifier]
Part No. IRF9953
OCR Text ...V 3 4 6 5 RDS(on) = 0.25 Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techn...00001 0.0001 0.001 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Trans...
Description Power MOSFET(Vdss=-30V, Rds(on)=0.25ohm)

File Size 98.36K  /  7 Page

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    IRF9956

IRF[International Rectifier]
Part No. IRF9956
OCR Text ... 3 6 4 5 RDS(on) = 0.10 T o p V iew Recommended upgrade: IRF7303 or IRF7313 Lower profile/smaller equivalent: IRF7503 De...00001 0.0001 0.001 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Trans...
Description Power MOSFET(Vdss=30V, Rds(on)=0.10ohm)

File Size 98.88K  /  7 Page

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    IRF9Z24NL IRF9Z24NS IRF9Z24NSTRR IRF9Z24NSTRL

IRF[International Rectifier]
International Rectifier, Corp.
Part No. IRF9Z24NL IRF9Z24NS IRF9Z24NSTRR IRF9Z24NSTRL
OCR Text ...l D VDSS = -55V RDS(on) = 0.175 G ID = -12A S Fifth Generation HEXFETs from International Rectifier utilize advanced process...00001 2 . P e a k TJ = P D M x Z th J C + T C 0.0001 0.001 0.01 0.1 t 1 , R e c ta...
Description -60V Single P-Channel HEXFET Power MOSFET in a TO-262 package
-55V Single P-Channel HEXFET Power MOSFET in a D2-Pak package
Power MOSFET(Vdss=-55V, Rds(on)=0.175ohm, Id=-12A) 功率MOSFET(减振钢板基本\u003d- 55V的,的Rds(on)\u003d 0.175ohm,身份证\u003d- 12A条)
Power MOSFET(Vdss=-55V/ Rds(on)=0.175ohm/ Id=-12A)

File Size 167.05K  /  10 Page

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    IRF9Z24N IRF9Z24NPBF

IRF[International Rectifier]
Part No. IRF9Z24N IRF9Z24NPBF
OCR Text ...l D VDSS = -55V RDS(on) = 0.175 G ID = -12A S Fifth Generation HEXFETs from International Rectifier utilize advanced process...00001 2. P ea k TJ = P DM x Z th JC + T C 0.0001 0.001 0.01 0.1 t 1 , R ectan gula...
Description -55V Single P-Channel HEXFET Power MOSFET in a TO-220AB package
Power MOSFET(Vdss=-55V, Rds(on)=0.175ohm, Id=-12A)

File Size 105.16K  /  8 Page

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    IRF9Z34NL IRF9Z34NS IRF9Z34NSTRL IRF9Z34NSTRR

IRF[International Rectifier]
Part No. IRF9Z34NL IRF9Z34NS IRF9Z34NSTRL IRF9Z34NSTRR
OCR Text ...l D VDSS = -55V RDS(on) = 0.10 G ID = -19A S Fifth Generation HEXFETs from International Rectifier utilize advanced processi...00001 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impeda...
Description Power MOSFET(Vdss=-55V/ Rds(on)=0.10ohm/ Id=-19A)
Power MOSFET(Vdss=-55V, Rds(on)=0.10ohm, Id=-19A)
-55V Single P-Channel HEXFET Power MOSFET in a D2-Pak package
-55V Single P-Channel HEXFET Power MOSFET in a TO-262 package

File Size 158.36K  /  10 Page

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    IRF9Z34N IRF9Z34NPBF

International Rectifier
Part No. IRF9Z34N IRF9Z34NPBF
OCR Text ... VDSS = -55V G S RDS(on) = 0.10 ID = -19A Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniqu...00001 t1 , Rectangular Pulse Duration (sec) Fig 11. Maximum Effective Transient Thermal Impeda...
Description Power MOSFET(Vdss=-55V/ Rds(on)=0.10ohm/ Id=-19A)
Power MOSFET(Vdss=-55V, Rds(on)=0.10ohm, Id=-19A)
-55V Single P-Channel HEXFET Power MOSFET in a TO-220AB package

File Size 104.35K  /  8 Page

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    2SJ355 2SJ355-T1 2SJ355-T2 D11217EJ1V0DS00

NEC[NEC]
Part No. 2SJ355 2SJ355-T1 2SJ355-T2 D11217EJ1V0DS00
OCR Text ...PACKAGE DIMENSIONS (in mm) 4.5 0.1 1.6 0.2 1.5 0.1 FEATURES * Can be directly driven by 5-V IC * Low ON resistance RDS(on) = 0.60 MAX....00001 -1 -2 -3 -4 VGS - Gate to Source Voltage - V 10 |yfs| - Forward Transfer Admittance -...
Description From old datasheet system
P-CHANNEL MOS FET FOR HIGH SWITCHING
P-channel MOS FET (-30V, -2A)

File Size 64.46K  /  6 Page

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    2SJ356 2SJ356-T2 2SJ356-T1 D11218EJ1V0DS00

NEC[NEC]
Part No. 2SJ356 2SJ356-T2 2SJ356-T1 D11218EJ1V0DS00
OCR Text ...PACKAGE DIMENSIONS (in mm) 4.5 0.1 1.6 0.2 1.5 0.1 FEATURES * Can be directly driven by 5-V IC * Low ON resistance RDS(on) = 0.95 MAX....00001 -1 -2 -3 -4 VDS - Drain to Source Voltage - V -5 -1 -2 -3 -4 VGS - Gate to Source ...
Description From old datasheet system
P-CHANNEL MOS FET FOR HIGH-SPEED SWITCHING
P-channel MOSFET

File Size 65.63K  /  6 Page

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