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For .9mh Found Datasheets File :: 293 Search Time::1.985ms
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				Unisonic Technologies Co., Ltd. 友顺科技股份有限公司 UTC[Unisonic Technologies]
Part No.	5N60-TA3-T 5N60-TF3-T 5N60L-TF3-T 5N60 5N60L 5N60L-TA3-T
OCR Text	...e width limited by TJ 2. L = 18.9mh, IAS = 4.5 A, VDD = 50V, RG = 25 , Starting TJ = 25 3. ISD 4.5A, di/dt 200A/s, VDD BVDSS, Starting TJ = 25 4. Pulse Test : Pulse width 300s, Duty cycle 2% 5. Essentially independent of operating temp...
Description	4.5 Amps, 600 Volts N-CHANNEL MOSFET 四点五安培，600伏特N通道MOSFET
File Size	148.22K / 6 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRFP15N60LPBF
OCR Text	.... 11) Starting TJ = 25C, L = 2.9mh, RG = 25, IAS = 15A, dv/dt = 10V/ns. (See Figure 12a) ISD 15A, di/dt 340A/s, VDD V(BR)DSS, TJ 150C. Pulse width 300s; duty cycle 2%. Coss eff. is a fixed capacitance that gives the same chargi...
Description	SMPS MOSFET
File Size	185.94K / 9 Page	View it Online	Download Datasheet

				MITSUMI[Mitsumi Electronics, Corp.]
Part No.	C8-R6L C8-R5L C8-R6D C8-R5D C8-R4D C8-R4L C8-R
OCR Text	...6 max. Inductance 0.01~5mH 0.01~9mH 0.01~30mH 0.01~10mH 0.01~18mH 0.01~60mH Operational Frequency 10~300kHZ 10~300kHZ 10~300kHZ 10~300kHZ 10~300kHZ 10~300kHZ Pcs/Reel 1000 1000 1000 1000 1000 1000 MITSUMI Transformers for Inverter or ...
Description	Transformers for Inverter or Converter
File Size	65.80K / 2 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRLI3215PBF
OCR Text	... 11 ) Starting TJ = 25C, L = 4.9mh RG = 25, IAS = 7.2A. (See Figure 12) ISD 7.2A, di/dt 100A/s, VDD V(BR)DSS, TJ 175C Pulse width 300s; duty cycle 2%. Caculated continuous current based on maximum allowable junction temperat...
Description	150V Single N-Channel HEXFET Power MOSFET in a Lead Free TO-220FullPAK package Advanced Process Technology
File Size	210.72K / 8 Page	View it Online	Download Datasheet

				FAIRCHILD[Fairchild Semiconductor]
Part No.	FQPF9P25
OCR Text	... junction temperature 2. L = 28.9mh, IAS = -6.0A, VDD = -50V, RG = 25 , Starting TJ = 25C 3. ISD -9.4A, di/dt 300A/s, VDD BVDSS, Starting TJ = 25C 4. Pulse Test : Pulse width 300s, Duty cycle 2% 5. Essentially independent of operating ...
Description	250V P-Channel MOSFET
File Size	577.69K / 8 Page	View it Online	Download Datasheet

				Intersil Corporation
Part No.	IRFF230
OCR Text	...D = 20V, start TJ = 25oC, L = 8.9mh, RG = 50, peak IAS = 5.5A (Figures 15, 16). Typical Performance Curves 1.2 POWER DISSIPATION MULTIPLIER 1.0 Unless Otherwise Specified 6.0 0.8 0.6 0.4 0.2 0 ID, DRAIN CURRENT (A) 0 50 100 15...
Description	5.5A, 200V, 0.400 Ohm, N-Channel Power MOSFET
File Size	325.03K / 7 Page	View it Online	Download Datasheet

				Intersil Corporation
Part No.	IRFF9230
OCR Text	...50V, starting TJ = 25oC, L = 46.9mh, RG = 25, peak IAS = 4.0A (Figures 15, 16). Typical Performance Curves 1.2 POWER DISSIPATION MULTIPLIER 1.0 0.8 Unless Otherwise Specified -5 ID, DRAIN CURRENT (A) -4 -3 0.6 0.4 -...
Description	4.0A/ -200V/ 0.800 Ohm/ P-Channel Power MOSFET -4.0A, -200V, 0.800 Ohm, P-Channel Power MOSFET
File Size	325.95K / 7 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRL620
OCR Text	... 50V, starting T J = 25C, L = 6.9mh R G = 25, IAS = 5.2A. (See Figure 12) To Order Previous Datasheet Index Next Data Sheet IRL620 ID, Drain Current (Amps) Fig 1. Typical Output Characteristics, TC = 25oC I , Drain-t...
Description	Power MOSFET(Vdss=200V, Rds(on)=0.80ohm, Id=5.2A)
File Size	401.60K / 8 Page	View it Online	Download Datasheet

				http:// International Rectifier
Part No.	IRLR7811WCPBF
OCR Text	...A. Starting TJ = 25C, L = 1.9mh R G = 25, IAS = 12A. * When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to application note #AN-994. Data and specifications subject t...
Description	SMPS MOSFET
File Size	201.33K / 9 Page	View it Online	Download Datasheet

				Fairchild Semiconductor, Corp. FAIRCHILD[Fairchild Semiconductor]
Part No.	FQB19N10L FQI19N10L FQB19N10LTM
OCR Text	...m junction temperature 2. L = 0.9mh, IAS = 19A, VDD = 25V, RG = 25 , Starting TJ = 25C 3. ISD 19A, di/dt 300A/s, VDD BVDSS, Starting TJ = 25C 4. Pulse Test : Pulse width 300s, Duty cycle 2% 5. Essentially independent of operating tempe...
Description	100V Logic N-Channel MOSFET(漏源电压00V的逻辑N沟道增强型MOS场效应管) 19 A, 100 V, 0.11 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-263 100V N-Channel Logic Level QFET
File Size	608.39K / 9 Page	View it Online	Download Datasheet

For .9mh Found Datasheets File :: 293 Search Time::1.985ms
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