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For -refresh Found Datasheets File :: 11597    Search Time::1.171ms    
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Part No. MT41J1G4THD-15 MT41J512M8THD-187E MT41J512M8THD-15
OCR Text ... of 0c to 95c ? 0c to 85c: 8192 refresh cycles in 64ms ? 85c to 95c: 8192 refresh cycles in 32ms notes: 1. cl = cas (read) latency. options marking ? configuration ? 64 meg x 4 x 8 banks x 2 ranks 1g4 ? 32 meg x 8 x 8 banks x 2 ranks 512m8 ...
Description 64M X 4 DDR DRAM, 1.5 ns, PBGA78
32M X 8 DDR DRAM, 1.87 ns, PBGA78
32M X 8 DDR DRAM, 1.5 ns, PBGA78

File Size 455.80K  /  14 Page

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Part No. MT41J1G4THD-187ED MT41J1G4THU-187A MT41J1G4THU-15A
OCR Text ... of 0c to 95c ? 0c to 85c: 8192 refresh cycles in 64ms ? 85c to 95c: 8192 refresh cycles in 32ms notes: 1. cl = cas (read) latency. options marking ? configuration ? 64 meg x 4 x 8 banks x 2 ranks 1g4 ? 32 meg x 8 x 8 banks x 2 ranks 512m8 ...
Description 1G X 4 DDR DRAM, PBGA78
1G X 4 DDR DRAM, PBGA82

File Size 455.67K  /  14 Page

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    PROMOS TECHNOLOGIES INC
Part No. V59C1512804QBF37
OCR Text ... command power down mode auto refresh and self refresh refresh interval: 7.8 us (8192 cycles/64 ms) ocd (off-chip driver impendance adjustment) odt (on-die termination) weak strength data-output driver option bidirectional differenti...
Description 64M X 8 DDR DRAM, 0.5 ns, PBGA60

File Size 1,189.75K  /  76 Page

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    EDE1108AJBG

Elpida Memory
Part No. EDE1108AJBG
OCR Text ...iver strength: normal, weak ? refresh: auto-refresh, self-refresh ? refresh cycles: 8192 cycles/64ms ? average refresh period 7.8 s at 0 c tc + 85c 3.9 s at + 85c < tc + 95c ? operating case temperature range ? ...
Description 1G bits DDR2 SDRAM

File Size 547.02K  /  75 Page

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    K4F151611 K4F151611D K4F151612D K4F171611D K4F171612D K4F151612D-J K4F151611D-T K4F151612D-T K4F171612D-J

Samsung Electronic
SAMSUNG[Samsung semiconductor]
Part No. K4F151611 K4F151611D K4F151612D K4F171611D K4F171612D K4F151612D-J K4F151611D-T K4F151612D-T K4F171612D-J
OCR Text ...upply voltage (+5.0V or +3.3V), refresh cycle (1K Ref. or 4K Ref.), access time (-50 or -60), power consumption(Normal or Low power) and package type(SOJ or TSOP-II) are optional features of this family. All of this family have CASbefore-RA...
Description 1M x 16 bit CMOS dynamic RAM with fast page mode. Supply voltage 3.3V, 4K refresh cycle.
1M x 16 bit CMOS dynamic RAM with fast page mode. Supply voltage 5V, 1K refresh cycle.
1M x 16Bit CMOS Dynamic RAM with Fast Page Mode
1M x 16 bit CMOS dynamic RAM with fast page mode. Supply voltage 3.3V, 1K refresh cycle.

File Size 525.70K  /  34 Page

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Part No. MT8VDDT1664AG-403A1
OCR Text ...  auto precharge option  auto refresh and self refresh modes  15.6s maximum average periodic refresh interval  serial presence detect (spd) with eeprom  programmable read cas latency  gold-plated edge contacts address table 128mb refr...
Description 16M X 64 DDR DRAM MODULE, 0.6 ns, DMA184

File Size 335.96K  /  16 Page

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    KM416C4000B KM416C4100B KM416C4000BS-6 KM416C4000BS-5

Samsung Electronic
SAMSUNG[Samsung semiconductor]
Part No. KM416C4000B KM416C4100B KM416C4000BS-6 KM416C4000BS-5
OCR Text ...mory cells within the same row. Refresh cycle(4K Ref. or 8K Ref.), access time (-45, -5 or -6) are optional features of this family. All of this family have CAS-before-RAS refresh, RAS-only refresh and Hidden refresh capabilities. This 4Mx1...
Description 4M x 16Bit CMOS dynamic RAM with fast page mode, 5V, 8K refresh, 50ns
4M x 16Bit CMOS dynamic RAM with fast page mode, 5V, 8K refresh, 60ns

File Size 826.10K  /  35 Page

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    KM416C4000C KM416C4100C KM416C4000CS-5

SAMSUNG[Samsung semiconductor]
Samsung Electronic
Part No. KM416C4000C KM416C4100C KM416C4000CS-5
OCR Text ...mory cells within the same row. Refresh cycle(4K Ref. or 8K Ref.), access time ( -5 or -6) are optional features of this family. All of this family have CAS-before-RAS refresh, RAS-only refresh and Hidden refresh capabilities. This 4Mx16 Fa...
Description 4M x 16Bit CMOS dynamic RAM with fast page mode, 5V, 8K refresh, 50ns

File Size 898.34K  /  35 Page

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    KM416C4004C KM416C4104C KM416C4004CS-5

SAMSUNG[Samsung semiconductor]
Samsung Electronic
Part No. KM416C4004C KM416C4104C KM416C4004CS-5
OCR Text ...mory cells within the same row. Refresh cycle(4K Ref. or 8K Ref.), access time (-5 or -6) are optional features of this family. All of this family have CAS-before-RAS refresh, RAS-only refresh and Hidden refresh capabilities. This 4Mx16 EDO...
Description 4M x 16Bit CMOS dynamic RAM with extended data out, 5V, 8K refresh, 50ns

File Size 943.13K  /  36 Page

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