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SeCoS Halbleitertechnologie... SeCoS Halbleitertechnol...
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Part No. |
SID10N30-600I SID10N30-15
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OCR Text |
... 04-dec-2012 rev. b page 1 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed individually. rohs complian...9a drain-source on-resistance 1 r ds(on) - - 900 m ? v gs =5.5v, i d =2.6a forward transcond... |
Description |
N-Channel Enhancement MOSFET
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File Size |
621.35K /
4 Page |
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Infineon Technologies A...
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Part No. |
IPD60R1K0CE
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OCR Text |
.... . . . . . . . . . . . . . . . 4 thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ....9a, r g =12.2 w ;seetable10 rise time t r - 8 - ns v dd =400v, v gs =10v, i d =1.9a, r g =12.2 ... |
Description |
Very high commutation ruggedness
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File Size |
2,315.48K /
16 Page |
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Alpha & Omega Semiconductor...
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Part No. |
AO4805 AO4805-10
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OCR Text |
... 62.5 g1 s1 g2 s2 d1 d1 d2 d2 2 4 5 1 3 8 6 7 top view soic-8 top view bottom view pin1 g2 d2 s2 g1 d1 s1 ...9a, di/dt=100a/ m s maximum body-diode continuous current input capacitance output capacitance turn-... |
Description |
30V Dual P-Channel MOSFET
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File Size |
246.08K /
5 Page |
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it Online |
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Advanced Power Electronics ...
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Part No. |
AP9965GYT-HF
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OCR Text |
... =10v, i d =9a - 17 21 m v gs =4.5v, i d =5a - 22 28 m v gs(th) gate threshold voltage v ds =v gs , i d =250ua 0.8 1.4 2.5 v g fs forward transconductance v ds =10v, i d =9a - 21 - s i dss drain-source leakage current v ds =32v, v gs =0v ... |
Description |
N-CHANNEL ENHANCEMENT MODE POWER MOSFET
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File Size |
57.06K /
4 Page |
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it Online |
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Price and Availability
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