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  -4.9a Datasheet PDF File

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    SUN09A65F

KODENSHI KOREA CORP.
Part No. SUN09A65F
OCR Text ...ance r ds(on) v gs =10v, i d =4.5a - 0.7 0.9 ? forward transfer conductance (note 3) g fs v ds =10v, i d =4.5a - 11 - s input capac...9a, r g =25 ? - 94 - ns rise time (note 3,4) t r - 43 - turn-off delay time (note 3,4) t ...
Description New Generation N-Ch Power MOSFET

File Size 567.21K  /  8 Page

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    MTB030N04N3 MTB030N04M3-0-T1-G

Cystech Electonics Corp.
Part No. MTB030N04N3 MTB030N04M3-0-T1-G
OCR Text ... 25.3m v gs= 4.5v, i d =7.3a 34.2m cystech electronics corp. spec. no. : c 884 n3 issued date : 20 1...9a i gss - - 10 0 n a v gs = 20 v , v ds =0v i dss - - 1 a v ds =40v, v g...
Description 40V N-Channel Enhancement Mode MOSFET

File Size 536.52K  /  9 Page

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    FDD2572-F085-08

Fairchild Semiconductor
Part No. FDD2572-F085-08
OCR Text ...v gs = 10v, r ja = 52 o c/w) 4 pulsed figure 4 a e as single pulse avalanche energy (note 1) 36 mj p d power dissipation 135 w derate abo...9a, v gs =10v - 0.045 0.054 ? i d = 4a, v gs = 6v, - 0.050 0.075 i d =9a, v gs =10v, t c =175 o c...
Description N-Channel PowerTrench? MOSFET 150V, 29A, 54mΩ

File Size 466.53K  /  11 Page

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    SeCoS Halbleitertechnologie...
SeCoS Halbleitertechnol...
Part No. SID10N30-600I SID10N30-15
OCR Text ... 04-dec-2012 rev. b page 1 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed individually. rohs complian...9a drain-source on-resistance 1 r ds(on) - - 900 m ? v gs =5.5v, i d =2.6a forward transcond...
Description N-Channel Enhancement MOSFET

File Size 621.35K  /  4 Page

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    Infineon Technologies A...
Part No. IPD60R1K0CE
OCR Text .... . . . . . . . . . . . . . . . 4 thermal characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ....9a, r g =12.2 w ;seetable10 rise time t r - 8 - ns v dd =400v, v gs =10v, i d =1.9a, r g =12.2 ...
Description Very high commutation ruggedness

File Size 2,315.48K  /  16 Page

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    IRFP450FI

STMicroelectronics
Part No. IRFP450FI
OCR Text ...fi irfw450 500 v 500 v 500 v <0.4 w <0.4 w <0.4 w 14 a 9a 14 a july 1993 absolute maximum ratings symbol parameter value unit irfp/irfw450 irfp450fi v ds drain-source voltage (v gs = 0) 500 500 v v dgr drain- gate voltage (r gs =20k w ) 500...
Description N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS

File Size 243.29K  /  10 Page

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    LVA519F LVA519S

Mitsumi Electric
Part No. LVA519F LVA519S
OCR Text ...ertical sync signal output pins 4. power supply voltage 4.7v~5.3v package sip-9a (lva519s) sop-14a (lva519f) applications 1. tv 2. vcr 3. other video equipment equivalent circuit diagram sip-9a sop-14a mitsumi sync separator with afc lva5...
Description Sync separator with AFC

File Size 221.35K  /  8 Page

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    Alpha & Omega Semiconductor...
Part No. AO4805 AO4805-10
OCR Text ... 62.5 g1 s1 g2 s2 d1 d1 d2 d2 2 4 5 1 3 8 6 7 top view soic-8 top view bottom view pin1 g2 d2 s2 g1 d1 s1 ...9a, di/dt=100a/ m s maximum body-diode continuous current input capacitance output capacitance turn-...
Description 30V Dual P-Channel MOSFET

File Size 246.08K  /  5 Page

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    Advanced Power Electronics ...
Part No. AP9965GYT-HF
OCR Text ... =10v, i d =9a - 17 21 m v gs =4.5v, i d =5a - 22 28 m v gs(th) gate threshold voltage v ds =v gs , i d =250ua 0.8 1.4 2.5 v g fs forward transconductance v ds =10v, i d =9a - 21 - s i dss drain-source leakage current v ds =32v, v gs =0v ...
Description N-CHANNEL ENHANCEMENT MODE POWER MOSFET

File Size 57.06K  /  4 Page

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