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  -32v Datasheet PDF File

For -32v Found Datasheets File :: 3215    Search Time::2.485ms    
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    VN808CM

STMicroelectronics
Part No. VN808CM
OCR Text ...aracteristics (10.5v < v cc < 32v; -40c < t j < 125c; unless otherwise specified) table 4. power section table 5. switching ( v cc = 24v ) symbol parameter value unit r thjc thermal resistance junction-case max 1.3 c/w r thja thermal...
Description LOW THRESHOLD OCTAL HIGH SIDE DRIVER

File Size 263.37K  /  14 Page

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    AS7620A-BQFT

Austriamicrosystems AG
Part No. AS7620A-BQFT
OCR Text ...e supply voltage range, 3.6v to 32v 100% duty cycle extends operating range pinprogrammable cyclebycycle current limit integrated pmos eliminates bootstrap capacitor resistorprogrammable early power fail warning inpu t powergood f...
Description 32V Hyst. 500mA Buck 2xMonitor

File Size 780.60K  /  16 Page

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    IRL1104PBF

International Rectifier
Part No. IRL1104PBF
OCR Text ... v gs = 0v ??? ??? 250 v ds = 32v, v gs = 0v, t j = 150c gate-to-source forward leakage ??? ??? 100 v gs = 16v gate-to-source reverse leakage ??? ??? -100 v gs = -16v q g total gate charge ??? ??? 68 i d = 62a q gs gate-to-source cha...
Description Logic-Level Gate Drive

File Size 165.58K  /  9 Page

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    AP9564GM10

Advanced Power Electronics Corp.
Part No. AP9564GM10
OCR Text ...ge current (t j =70 o c) v ds =-32v, v gs =0v - - -25 ua i gss gate-source leakage v gs =+ 25v, v ds =0v - - + 100 na q g total gate charge 2 i d =-7a - 27 43 nc q gs gate-source charge v ds =-32v - 6 - nc q gd gate-drain ("miller") charge ...
Description P-CHANNEL ENHANCEMENT MODE POWER MOSFET

File Size 92.46K  /  4 Page

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    AP9563GM-HF

Advanced Power Electronics Corp.
Part No. AP9563GM-HF
OCR Text ...ge current (t j =70 o c) v ds =-32v, v gs =0v - - -25 ua i gss gate-source leakage v gs =+ 25v, v ds =0v - - + 100 na q g total gate charge 2 i d =-6a - 16 30 nc q gs gate-source charge v ds =-32v - 2.2 - nc q gd gate-drain ("miller") char...
Description P-CHANNEL ENHANCEMENT MODE POWER MOSFET

File Size 54.22K  /  4 Page

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    AP9563GK12

Advanced Power Electronics Corp.
Part No. AP9563GK12
OCR Text ...ge current (t j =70 o c) v ds =-32v, v gs =0v - - -25 ua i gss gate-source leakage v gs =+ 25v, v ds =0v - - + 100 na q g total gate charge i d =-6a - 20 30 nc q gs gate-source charge v ds =-32v - 4 - nc q gd gate-drain ("miller") charge v ...
Description P-CHANNEL ENHANCEMENT MODE POWER MOSFET

File Size 93.28K  /  4 Page

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    AP9563GH09 AP9563GJ09

Advanced Power Electronics Corp.
Part No. AP9563GH09 AP9563GJ09
OCR Text ...e current (t j =125 o c) v ds =-32v, v gs =0v - - -250 ua i gss gate-source leakage v gs = + 25v, v ds =0v - - + 100 na q g total gate charge 2 i d =-12a - 16 30 nc q gs gate-source charge v ds =-32v - 2.5 - nc q gd gate-drain ("miller") c...
Description Lower Gate Charge, Simple Drive Requirement, Fast Switching Characteristic

File Size 96.43K  /  4 Page

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