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RECTRON LTD
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| Part No. |
SMBJ75C-w RECTRONLTD-TFMBJ75A-w TFMBJ170C-w SMBJ43
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| OCR Text |
...per fig.2. 4. measured on 8.3ms single half sine-wave duty cycle = 4 pules per minute maximum. 5. v f = 3.5v on tfmbj-5.0 thru tfmbj-90 devices and v f = 5.0v on tfmbj-100 thru tfmbj-170 devices. ratings steady state power dissipation at ... |
| Description |
600 w, BIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA
600 w, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-214AA
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| File Size |
36.21K /
5 Page |
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RECTRON LTD
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| Part No. |
FFM18w-w
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| OCR Text |
...ure unless otherwise specified. single phase, half wave, 60 hz, resistive or inductive load. for capacitive load, derate current by 20%. electrical characteristics (at t a = 25 o c unless otherwise noted) ffm10w thru ffm18w smx maximum ra... |
| Description |
0.5 A, 1800 V, SILICON, SIGNAL DIODE
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| File Size |
22.10K /
2 Page |
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it Online |
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Alpha & Omega Semiconductor
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| Part No. |
AOK30B135w1
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| OCR Text |
...by t jmax <175c and t p <3 s c/w 1.20 300 -55 to 175 340 c/w 40 170 c 120 aok30b135w1 w units units parameter absolute maximum ratings t a...single pulse single pulse t on t p d figure 21 : normalized maximum transient thermal impedance fo ... |
| Description |
IGBT with Anti-Parallel Diode IGBTs
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| File Size |
533.88K /
8 Page |
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it Online |
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Alpha & Omega Semiconductor
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| Part No. |
AOK20B120E2
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| OCR Text |
...by t jmax <175c and t p <3 s c/w 1.6 300 -55 to 175 250 c/w 40 125 c 80 aok20b120e2 w units units parameter absolute maximum ratings t a =...single pulse single pulse t on t p d 0.001 0.01 0.1 1 10 1e-06 1e-05 0.0001 0.001 0.01 0.1 1 10 z j... |
| Description |
IGBT with Anti-Parallel Diode IGBTs
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| File Size |
516.61K /
8 Page |
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it Online |
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Alpha & Omega Semiconductor
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| Part No. |
AOK20B120E1
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| OCR Text |
...aximum diode junction-to-case c/w 0.45 maximum igbt junction-to-case maximum junction-to-ambient t c =100c maximum lead temperature for sold...single pulse single pulse t on t p d 0. 001 0. 01 0.1 1 1e- 06 1e- 05 0.0001 0. 001 0. 01 0.1 1 z j... |
| Description |
IGBT with Anti-Parallel Diode IGBTs
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| File Size |
713.91K /
8 Page |
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it Online |
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Alpha & Omega Semiconductor
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| Part No. |
AOK20B120D1
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| OCR Text |
...aximum diode junction-to-case c/w 0.44 maximum igbt junction-to-case maximum junction-to-ambient t c =100c maximum lead temperature for sold...single pulse single pulse t on t p d figure 21 : normalized maximum transient thermal impedance fo ... |
| Description |
IGBT with Anti-Parallel Diode IGBTs
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| File Size |
540.35K /
8 Page |
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it Online |
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Alpha & Omega Semiconductor
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| Part No. |
AOK18N65
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| OCR Text |
...c maximum case-to-sink a 0.5 c/w 0.3 6.3 c/w aok18n65 units a c mj w w/ o c c/w 40 300 -55 to 150 maximum junction-to-ambient a,d c p d v...single pulsed avalanche energy g 1190 parameter maximum lead temperature for soldering purpose, 1/8... |
| Description |
single HV MOSFETs (500V - 1000V)
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| File Size |
301.39K /
5 Page |
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Alpha & Omega Semiconductor
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| Part No. |
AOUS66923
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| OCR Text |
...ture range -55 to 150 typ p dsm w t a =25c 6.2 power dissipation a maximum junction-to-ambient a c/w r q ja 15 40 20 w i d a 30 a 130 i ds...single pulse width limited by junction temperature t j(max) =150 c. d. the r q ja is the sum of ... |
| Description |
single MV MOSFETs (40V - 400V)
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| File Size |
344.90K /
6 Page |
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ON Semiconductor
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| Part No. |
NTMFS4708N
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| OCR Text |
...eady state t a = 25 c p d 2.2 w t 10 s 6.25 continuous drain current (note 2) steady state t a = 25 c i d 7.8 a t a = 85 c 5.6 powe...single pulse drain ? to ? source avalanche energy. v dd = 25 v, v gs = 10 v, i pk = 7.0 a, l = 10... |
| Description |
Power MOSFET 30 V, 19 A(30V, 19A, 功率MOSFET) 7800 mA, 30 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
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| File Size |
137.75K /
6 Page |
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it Online |
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