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  vdss-200v Datasheet PDF File

For vdss-200v Found Datasheets File :: 2063    Search Time::2.61ms    
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    FQP5N20L

Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
Part No. FQP5N20L
OCR Text ...bsolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL TC = 25C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25C) Drain Current - Continuous (TC = 100C) Drain Current - Pulsed (N...
Description 200V LOGIC N-Channel MOSFET 4.5 A, 200 V, 1.25 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB

File Size 604.00K  /  8 Page

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    FQPF5N20L

FAIRCHILD[Fairchild Semiconductor]
Part No. FQPF5N20L
OCR Text ...bsolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL TC = 25C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25C) Drain Current - Continuous (TC = 100C) Drain Current - Pulsed (N...
Description 200V LOGIC N-Channel MOSFET

File Size 553.47K  /  8 Page

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    IRF640A

FAIRCHILD[Fairchild Semiconductor]
Part No. IRF640A
OCR Text ...bsolute Maximum Ratings Symbol VDSS ID IDM VGS EAS IAR EAR dv/dt PD TJ , TSTG TL Characteristic Drain-to-Source Voltage Continuous Drain Cu...200V VDS=160V,TC=125 C VGS=10V,ID=9A VDS=40V,ID=9A 4 O 4 O o o V/ C ID=250 A 1160 1500 VG...
Description Advanced Power MOSFET

File Size 259.33K  /  7 Page

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    IRF640L IRF640S

IRF[International Rectifier]
Part No. IRF640L IRF640S
OCR Text ...g Fully Avalanche Rated D VDSS = 200V RDS(on) = 0.18 G S ID = 18A Description Third Generation HEXFETs from International Rectifier provide the designer with the best combinations of fast switching , ruggedized device design...
Description Power MOSFET(Vdss=200V/ Rds(on)=0.18ohm/ Id=18A)
Power MOSFET(Vdss=200V, Rds(on)=0.18ohm, Id=18A)
HEXFET? Power MOSFET

File Size 224.71K  /  10 Page

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    IRF640N IRF640NL IRF640NS

IRF[International Rectifier]
Part No. IRF640N IRF640NL IRF640NS
OCR Text ... HEXFET(R) Power MOSFET D VDSS = 200V RDS(on) = 0.15 G S ID = 18A TO-220AB IRF640N D2Pak IRF640NS TO-262 IRF640NL Absolute Maximum Ratings ID @ TC = 25C ID @ TC = 100C IDM PD @TC = 25C VGS EAS IAR EAR dv/dt TJ TSTG ...
Description Power MOSFET(Vdss=200V/ Rds(on)=0.15ohm/ Id=18A)
Power MOSFET(Vdss=200V, Rds(on)=0.15ohm, Id=18A)

File Size 153.14K  /  11 Page

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    IRFBA90N20 IRFBA90N20D

IRF[International Rectifier]
Part No. IRFBA90N20 IRFBA90N20D
OCR Text VDSS 200V RDS(on) max 0.023 ID 98A Benefits Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001) l Fully Characterized Avalanch...
Description Power MOSFET(Vdss=200V, Rds(on)max=0.023ohm, Id=98A??
Power MOSFET(Vdss=200V/ Rds(on)max=0.023ohm/ Id=98A)
Power MOSFET(Vdss=200V, Rds(on)max=0.023ohm, Id=98A)
Power MOSFET(Vdss=200V, Rds(on)max=0.023ohm, Id=98A?)
Power MOSFET(Vdss=200V, Rds(on)max=0.023ohm, Id=98A?

File Size 97.19K  /  8 Page

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    IRFM220B IRFM220BTFFP001 IRFM220BD84Z

FAIRCHILD SEMICONDUCTOR CORP
FAIRCHILD[Fairchild Semiconductor]
Part No. IRFM220B IRFM220BTFFP001 IRFM220BD84Z
OCR Text ...bsolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL TC = 25C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25C) Drain Current - Continuous (TC = 70C) Drain Current - Pulsed (No...
Description 1.13 A, 200 V, 0.8 ohm, N-CHANNEL, Si, POWER, MOSFET
200V N-Channel MOSFET
200V N-Channel B-FET / Substitute of IRFM220A

File Size 725.16K  /  8 Page

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    IRFM224B IRFM224BL99Z

FAIRCHILD SEMICONDUCTOR CORP
FAIRCHILD[Fairchild Semiconductor]
Part No. IRFM224B IRFM224BL99Z
OCR Text ...bsolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL TC = 25C unless otherwise noted Parameter Drain-Sour...200V Capacitance [pF] 600 Ciss Coss 6 400 4 Crss 200 Notes : 1. VGS = 0 V ...
Description 920 mA, 250 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
250V N-Channel MOSFET

File Size 703.34K  /  8 Page

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    IRFNL210B EA0610P

FAIRCHILD[Fairchild Semiconductor]
Part No. IRFNL210B EA0610P
OCR Text ...bsolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL TC = 25C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25C) Drain Current - Continuous (TC = 100C) Drain Current - Pulsed (N...
Description 200V N-Channel MOSFET
200V N-Channel B-FET TO-92L

File Size 677.43K  /  8 Page

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    IRFR15N20D IRFU15N20D

IRF[International Rectifier]
Part No. IRFR15N20D IRFU15N20D
OCR Text ... HEXFET(R) Power MOSFET l VDSS 200V RDS(on) max 0.165 ID 17A Benefits Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective COSS to Simplify Design, (See App. Note AN1001...
Description SMPS MOSFET

File Size 180.49K  /  10 Page

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