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				SamHop Microelectronics Corp.
Part No.	STM4800A
OCR Text	...x ID 8.2A R DS (ON) S uper high dense cell design for low R DS (ON). 18.5 @ V G S = 10V 33 @ V G S = 4.5V R ugged and reliable. S urface Mount P ackage. S O-8 1 ABS OLUTE MAXIMUM R ATINGS (TA=25 C unless otherwise note...
Description
File Size	628.35K / 7 Page	View it Online	Download Datasheet

				Isahaya Electronics Cor... Isahaya Electronics Corporation ETC Isahaya Electrionics, Corp.
Part No.	2SK3536
OCR Text	...2 0.2 0.8 :mm FEATURE 1 AES uper-thin flat lead type package. t=0.45mm 2 AEExcellent characteristics transient 3 APPLICATION Electret condenser microphone application TERMINAL CONNECTO Parameter Symbol Unit Ratings V Drain to S...
Description	ELECTRET CONDENSER MICROPHONE APPLICATION N CHANNEL JUNCTION TYPE Electret Condenser N-Channel ELECTRET CONDENSER MICROPHONE APPLICATION N CHANNEL JUNCTION TYPE 电容式麦克风的应用结型N通道
File Size	56.10K / 3 Page	View it Online	Download Datasheet

				SamHop Microelectronics
Part No.	SDM9435A
OCR Text	... 5 ID -5A R DS (ON) S uper high dense cell design for low R DS (ON). 50 @ V G S = -10V 90 @ V G S = -4.5V R ugged and reliable. S urface Mount P ackage. D 8 D 7 D 6 D 5 S O-8 1 1 2 3 4 S S S G ...
Description	P-Channel Enhancement Mode MOSFET
File Size	542.90K / 7 Page	View it Online	Download Datasheet

				SamHop Microelectronics Corp.
Part No.	SDP85N03L SDB85N03L
OCR Text	...ax ID 83A R DS (on) S uper high dense cell design for extremely low R DS (ON). High power and current handling capability. TO-220 & TO-263 package. 5 @ V G S = 10V 7.5 @ V G S = 4.5V D D G D S G S G S DP S E R IE...
Description	N-CHANNEL LOGIC LEVEL E NHANCEMENT MODE FIELD EFFECT TRANSISTOR
File Size	480.33K / 6 Page	View it Online	Download Datasheet

				SamHop Microelectronics Corp.
Part No.	SDU30N02 SDD30N02
OCR Text	... V DS S 20V F E AT UR E S S uper high dense cell design for low R DS (ON). ID 25A R DS (ON) ( m W ) Max 20 @ V G S = 4.5V R ugged and reliable. TO-252 and TO-251 P ackage. D D G S G D S G S DU S E R IE S TO-252AA(...
Description	N-CHANNEL E NHANCEMENT MODE FIELD EFFECT TRANSISTOR
File Size	786.34K / 8 Page	View it Online	Download Datasheet

				SamHop Microelectronics Corp.
Part No.	SDU50N03L SDD50N03L
OCR Text	...ax ID 47A R DS (ON) S uper high dense cell design for low R DS (ON). 8 @ V G S = 10V 12 @ V G S = 4.5V R ugged and reliable. TO-252 and TO-251 P ackage. D D G S G D S G S DU S E R IE S TO-252AA(D-P AK) S DD ...
Description	N-CHANNEL LOGIC LEVEL E NHANCEMENT MODE FIELD EFFECT TRANSISTOR
File Size	793.45K / 8 Page	View it Online	Download Datasheet

				SamHop Microelectronics Corp.
Part No.	STM4952
OCR Text	... ID -5.2A R DS (ON) S uper high dense cell design for low R DS (ON). 50 @ V G S = -4.5V 80 @ V G S = -2.5V R ugged and reliable. S urface Mount P ackage. D1 8 D1 7 D2 6 D2 5 S O-8 1 1 2 3 4 S1 G1 S...
Description	DUAL P-CHANNEL E NHANCEMENT MODE FIELD EFFECT TRANSISTOR
File Size	589.16K / 7 Page	View it Online	Download Datasheet

				Diodes Incorporated SamHop Microelectronics Corp.
Part No.	SDM40N02
OCR Text	...x ID 3.8A R DS (ON) S uper high dense cell design for low R DS (ON). 44 @ V G S = 4.5V 55 @ V G S = 2.5V R ugged and reliable. S urface Mount P ackage. S O-8 1 ABS OLUTE MAXIMUM R ATINGS (TA=25 C unless otherwise noted...
Description	N-Channel E nhancement Mode F ield E ffect Transistor
File Size	597.65K / 7 Page	View it Online	Download Datasheet

				SamHop Microelectronics Corp.
Part No.	STM4410A
OCR Text	...ax ID 10A R DS (ON) S uper high dense cell design for low R DS (ON). 9.5 @ V G S = 10V 21 @ V G S = 4.5V R ugged and reliable. S urface Mount P ackage. S O-8 1 ABS OLUTE MAXIMUM R ATINGS (TA=25 C unless otherwise noted...
Description	N-CHANNEL E NHANCEMENT MODE FIELD EFFECT TRANSISTOR
File Size	627.97K / 7 Page	View it Online	Download Datasheet

For uper Found Datasheets File :: 301 Search Time::1.485ms
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