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  tsop-64 Datasheet PDF File

For tsop-64 Found Datasheets File :: 5680    Search Time::1.406ms    
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    HY628100A HY628100AG HY628100ALG HY628100ALLG HY628100ALLT1 HY628100ALT1 HY628100AT1 HY628100AG-55 HY628100AG-70

HYNIX[Hynix Semiconductor]
Hynix Semiconductor Inc.
Hynix Semiconductor, Inc.
Part No. HY628100A HY628100AG HY628100ALG HY628100ALLG HY628100ALLT1 HY628100ALT1 HY628100AT1 HY628100AG-55 HY628100AG-70
OCR Text ...32pin 525mil SOP - 32pin 8x20mm TSOP-I(Standard) Standby Current(uA) L LL 1mA 100 20 Temperature (C) 0~70 PIN CONNECTION NC A16 A1...64) 0.021(0.54) 0.008(0.21) 0.004(0.10) 0.020(0.50) BSC 0.011(0.27) 0.007(0.17) Rev.05 /Feb.99 ...
Description 128Kx8bit CMOS SRAM, standby current 1 mA, 70ns
128Kx8bit CMOS SRAM, standby current 1 mA, 55ns
128Kx8bit CMOS SRAM 128Kx8bit CMOS SRAM
Circular Connector; No. of Contacts:3; Series:MS27497; Body Material:Aluminum; Connecting Termination:Crimp; Connector Shell Size:12; Circular Contact Gender:Socket; Circular Shell Style:Wall Mount Receptacle RoHS Compliant: No 128Kx8bit CMOS SRAM

File Size 126.52K  /  9 Page

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    K4E160411D K4E160412D K4E170411D K4E170412D K4E16704112D K4E160411D-B K4E160412D-B K4E160411D-F K4E160412D-F K4E170411D-

SAMSUNG[Samsung semiconductor]
Samsung Electronic
Part No. K4E160411D K4E160412D K4E170411D K4E170412D K4E16704112D K4E160411D-B K4E160412D-B K4E160411D-F K4E160412D-F K4E170411D-B K4E170411D-F K4E170412D-F K4E170412D-B
OCR Text ... power) and package type(SOJ or TSOP-II) are optional features of this family. All of this family have CAS-before-RAS refresh, RAS-only refr...64 128 0 30 67 42 47 5 10 5 28 20 47 8 50 30 13 13 3 13 10 10 10 10 5 3 3 15 5 5 5 5 100 90 -50 13 1...
Description 4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 2K refresh cycle.
4M x 4Bit CMOS Dynamic RAM with Extended Data Out Data Sheet
4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 2K refresh cycle.
4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 4K refresh cycle.
4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 4K refresh cycle.

File Size 254.50K  /  21 Page

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    K4F160411D K4F160412D K4F170411D K4F170412D K4F160411D-B K4F160411D-F K4F160412D-B K4F160412D-F

Samsung Electronic
SAMSUNG[Samsung semiconductor]
Part No. K4F160411D K4F160412D K4F170411D K4F170412D K4F160411D-B K4F160411D-F K4F160412D-B K4F160412D-F
OCR Text ... power) and package type(SOJ or TSOP-II) are optional features of this family. All of this family have CASbefore-RAS refresh, RAS-only refre...64 128 0 36 73 48 53 5 10 5 30 35 76 10 50 30 13 13 0 13 10 10 10 10 100 90 -50 13 15 0 15 10 10 10 ...
Description 4M x 4 bit CMOS dynamic RAM with fast page mode. Supply voltage 3.3V, 2K refresh cycle.
4M x 4 bit CMOS dynamic RAM with fast page mode. Supply voltage 5V, 2K refresh cycle.
4M x 4Bit CMOS Dynamic RAM with Fast Page Mode

File Size 223.25K  /  20 Page

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    TE28F016B3B120 TE28F016B3B150 TE28F016B3T120 TE28F016B3T150 GT28F008B3B120 GT28F008B3B150 GT28F008B3T120 GT28F008B3T150

INTEL[Intel Corporation]
Part No. TE28F016B3B120 TE28F016B3B150 TE28F016B3T120 TE28F016B3T150 GT28F008B3B120 GT28F008B3B150 GT28F008B3T120 GT28F008B3T150 GT28F016B3B120 GT28F016B3B150 GT28F016B3T120 GT28F016B3T150 TE28F008B3B120 TE28F008B3B150 TE28F008B3T120 TE28F008B3T150 28F008B3
OCR Text ... 48-Ball BGA* Package 40-Lead TSOP Package Footprint Upgradeable Upgradeable from 2-, 4- and 8-Mbit Boot Block ETOXTM V (0.4 ) Flash Tech...64-Kbyte blocks (8 Mbit) Thirty-one 64-Kbyte main blocks (16 Mbit) WP# locks/unlocks parameter block...
Description SMART 3 ADVANCED BOOT BLOCK BYTE-WIDE

File Size 378.37K  /  49 Page

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    TE28F016C3B110 TE28F016C3B90 TE28F016C3T110 TE28F016C3T90 TE28F320C3B110 TE28F320C3B90 TE28F320C3T110 TE28F320C3T90 TE28

INTEL[Intel Corporation]
Part No. TE28F016C3B110 TE28F016C3B90 TE28F016C3T110 TE28F016C3T90 TE28F320C3B110 TE28F320C3B90 TE28F320C3T110 TE28F320C3T90 TE28F160C3B110 TE28F160C3B90 TE28F160C3T110 TE28F160C3T90 GT28F160C3B110 GT28F160C3B90 GT28F160C3T110 GT28F160C3T90 GT28F016C3B110 GT28F016C3B90 GT28F016C3T110 GT28F016C3T90 GT28F032C3B110 GT28F032C3B90 GT28F032C3T110 GT28F032C3T90 TE28F800C3B110 TE28F800C3B90 TE28F800C3T110 TE28F800C3T90 TE28F008C3B110 GT28F320C3B110 RC28F800C3 TE28F320C3 TE28F008C3T90 TE28F008C3T110 RC28F160C3 GT28F320C3B90 GT28F320C3T90 GT28F320C3T110 28F008C3 RC28F320C3 TE28F008C3B90
OCR Text ... 48-Ball BGA* Package 48-Lead TSOP Package x 8 I/O for Space Savings 48-Ball BGA* Package 40-Lead TSOP Package 0.25 ETOXTM VI Flash Tec...64-Kbyte main 8-Mb: 15 x 64-Kbyte main 16-Mb: 31 x 64-Kbyte main 32-Mb: 63 x 64-Kbyte main 8 x 4-Kwo...
Description 3 VOLT ADVANCED BOOT BLOCK 8- 16- 32-MBIT FLASH MEMORY FAMILY
3 VOLT ADVANCED BOOT BLOCK 8-, 16-, 32-MBIT FLASH MEMORY FAMILY

File Size 352.89K  /  59 Page

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    TE28F016S5-110 PA28F004S5-120 PA28F004S5-85 PA28F008S5-120 PA28F008S5-85 PA28F016S5-120 PA28F016S5-95 TB28F008S5-100 TE2

INTEL[Intel Corporation]
Part No. TE28F016S5-110 PA28F004S5-120 PA28F004S5-85 PA28F008S5-120 PA28F008S5-85 PA28F016S5-120 PA28F016S5-95 TB28F008S5-100 TE28F004S5-100 E28F008S5-85 E28F008S5-120 E28F016S5-95 E28F016S5-120 TE28F008S5-100 28F004S5 E28F004S5-120 E28F004S5-85 TB28F004S5-100 TB28F016S5-110
OCR Text ...try-Standard Packaging 40-Lead TSOP, 44-Lead PSOP n n n n n n High-Density 64-Kbyte Symmetrical Erase Block Architecture 4 Mbit: Eight Blocks 8 Mbit: Sixteen Blocks 16 Mbit: Thirty-Two Blocks Extended Cycling Capability 100,00...
Description BYTE-WIDE SMART 5 FlashFile MEMORY FAMILY 4 8 AND 16 MBIT
BYTE-WIDE SMART 5 FlashFile MEMORY FAMILY 4, 8, AND 16 MBIT

File Size 480.55K  /  37 Page

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    TE28F016SC-110 PA28F004SC-120 PA28F004SC-85 PA28F008SC-120 PA28F008SC-85 PA28F016SC-120 PA28F016SC-95 TB28F008SC-100 TE2

INTEL[Intel Corporation]
Part No. TE28F016SC-110 PA28F004SC-120 PA28F004SC-85 PA28F008SC-120 PA28F008SC-85 PA28F016SC-120 PA28F016SC-95 TB28F008SC-100 TE28F004SC-100 G28F008SC-120 E28F008SC-120 28F004SC E28F004SC-120 E28F004SC-85 E28F008SC-85 E28F016SC-120 E28F016SC-95 G28F008SC-150 G28F016SC-120 G28F016SC-150 TB28F004SC-100 TB28F016SC-110 TE28F008SC-100
OCR Text ...try-Standard Packaging 40-Lead TSOP, 44-Lead PSOP and 40 Bump BGA* CSP n n n n n n High-Density 64-Kbyte Symmetrical Erase Block Architecture 4 Mbit: Eight Blocks 8 Mbit: Sixteen Blocks 16 Mbit: Thirty-Two Blocks Extended Cycli...
Description BYTE-WIDE SmartVoltage FlashFile MEMORY FAMILY 4/ 8/ AND 16 MBIT
BYTE-WIDE SmartVoltage FlashFile MEMORY FAMILY 4, 8, AND 16 MBIT

File Size 697.63K  /  42 Page

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    AM29F400AB AM29F400AB-120EC AM29F400AB-120ECB AM29F400AB-120EI AM29F400AB-120EIB AM29F400AB-120FC AM29F400AB-120FCB AM29

AMD[Advanced Micro Devices]
Part No. AM29F400AB AM29F400AB-120EC AM29F400AB-120ECB AM29F400AB-120EI AM29F400AB-120EIB AM29F400AB-120FC AM29F400AB-120FCB AM29F400AB-120FI AM29F400AB-120FIB AM29F400AB-120SC AM29F400AB-120SCB AM29F400AB-120SI AM29F400AB-120SIB AM29F400AB-150EC AM29F400AB-150ECB AM29F400AB-150EI AM29F400AB-150EIB AM29F400AB-150FC AM29F400AB-150FCB AM29F400AB-150FI AM29F400AB-150FIB AM29F400AB-150SC AM29F400AB-150SCB AM29F400AB-150SI AM29F400AB-150SIB AM29F400AB-65EC AM29F400AB-65ECB AM29F400AB-65EI AM29F400AB-65EIB AM29F400AB-65FC AM29F400AB-65FCB AM29F400AB-65FI AM29F400AB-65FIB AM29F400AB-65SC AM29F400AB-65SCB AM29F400AB-65SI AM29F400AB-65SIB AM29F400AB-70EC AM29F400AB-70ECB AM29F400AB-70EI AM29F400AB-70EIB AM29F400AB-70FC AM29F400AB-70FCB AM29F400AB-70FI AM29F400AB-70FIB AM29F400AB-70SC AM29F400AB-70SCB AM29F400AB-70SI AM29F400AB-70SIB AM29F400AB-90EC AM29F400AB-90ECB AM29F400AB-90EI AM29F400AB-90EIB AM29F400AB-90FC AM29F400AB-90FCB AM29F400AB-90FI AM29F400AB-90FIB AM29F400AB-90SC AM29F400AB-90SCB AM29F400AB-90SI AM29F400AB-90SIB AM29F400AT AM29F400AT-120EC AM29F400AT-120ECB AM29F400AT-120EI AM29F400AT-120EIB AM29F400AT-120FC AM29F400AT-120FCB AM29F400AT-120FI AM29F400AT-120FIB AM29F400AT-120SC AM29F40
OCR Text ... options -- 44-pin SO -- 48-pin TSOP s Minimum 100,000 write/erase cycles guaranteed s High performance -- 60 ns maximum access time s Secto...64 Kbytes -- Any combination of sectors can be erased. Also supports full chip erase. s Sector prote...
Description 4 Megabit (524288 x 8-Bit/262144 x 16-Bit) CMOS 5.0 Volt-only Sector Erase Flash Memory
4 Megabit (524,288 x 8-Bit/262,144 x 16-Bit) CMOS 5.0 Volt-only, Sector Erase Flash Memory

File Size 136.58K  /  35 Page

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    K4F151611 K4F151611D K4F151612D K4F171611D K4F171612D K4F151612D-J K4F151611D-T K4F151612D-T K4F171612D-J

Samsung Electronic
SAMSUNG[Samsung semiconductor]
Part No. K4F151611 K4F151611D K4F151612D K4F171611D K4F171612D K4F151612D-J K4F151611D-T K4F151612D-T K4F171612D-J
OCR Text ... power) and package type(SOJ or TSOP-II) are optional features of this family. All of this family have CASbefore-RAS refresh, RAS-only refre...64 128 0 36 73 48 53 5 10 5 30 35 76 10 50 30 13 13 0 13 100 90 -50 13 15 0 15 100 110 -50 200K 40 8...
Description 1M x 16 bit CMOS dynamic RAM with fast page mode. Supply voltage 3.3V, 4K refresh cycle.
1M x 16 bit CMOS dynamic RAM with fast page mode. Supply voltage 5V, 1K refresh cycle.
1M x 16Bit CMOS Dynamic RAM with Fast Page Mode
1M x 16 bit CMOS dynamic RAM with fast page mode. Supply voltage 3.3V, 1K refresh cycle.

File Size 525.70K  /  34 Page

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    KM416C4000B KM416C4100B KM416C4000BS-6 KM416C4000BS-5

Samsung Electronic
SAMSUNG[Samsung semiconductor]
Part No. KM416C4000B KM416C4100B KM416C4000BS-6 KM416C4000BS-5
OCR Text ...d pinout * Available in Plastic TSOP(II) package * +5.0V10% power supply 4K 715 660 605 8K 550 495 440 FUNCTIONAL BLOCK DIAGRAM Contr...64 64 0 32 67 43 48 5 10 5 26 31 70 9 45 28 12 12 0 12 10 15 10 10 100 80 -50 13 13 0 13 10 15 10 10...
Description 4M x 16Bit CMOS dynamic RAM with fast page mode, 5V, 8K refresh, 50ns
4M x 16Bit CMOS dynamic RAM with fast page mode, 5V, 8K refresh, 60ns

File Size 826.10K  /  35 Page

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