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  to-98 Datasheet PDF File

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    IRF530L IRF530NS IRF530NL

International Rectifier
Part No. IRF530L IRF530NS IRF530NL
OCR Text ... advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching spee...98 IRF530NS/L Electrical Characteristics @ TJ = 25C (unless otherwise specified) Parameter Drai...
Description Power MOSFET(Vdss=100V/ Rds(on)=0.11ohm/ Id=17A)
HEXFET Power MOSFET
Power MOSFET(Vdss=100V, Rds(on)=0.11ohm, Id=17A)

File Size 174.65K  /  10 Page

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    IRF7807VD1

International Rectifier, Corp.
IRF[International Rectifier]
Part No. IRF7807VD1
OCR Text ...ctifiers in DC-DC Converters Up to 5A Output * Low Conduction Losses * Low Switching Losses * Low Vf Schottky Rectifier Description The FETK...98 3 .99 A 6 5 H 0.2 5 (.0 10 ) M AM 5 8 E -A - 7 A1 B C D E e e1 H K 0 .10 (.00 4)...
Description Circular Connector; MIL SPEC:MIL-C-26482, Series I, Solder; Body Material:Aluminum; Series:SP06; Number of Contacts:5; Connector Shell Size:14; Connecting Termination:Solder; Circular Shell Style:Straight Plug; Body Style:Straight FETKY⑩MOSFET肖特基二极管
FETKY MOSFET / SCHOTTKY DIODE
FETKY⑩ MOSFET / SCHOTTKY DIODE

File Size 116.12K  /  9 Page

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    IRF7807VD2 IRF7807VD2TR

IRF[International Rectifier]
Part No. IRF7807VD2 IRF7807VD2TR
OCR Text ...ctifiers in DC-DC Converters Up to 5A Output * Low Conduction Losses * Low Switching Losses * Low Vf Schottky Rectifier Description The FETK...98 3 .99 A 6 5 H 0.2 5 (.0 10 ) M AM 5 8 E -A - 7 A1 B C D E e e1 H K 0 .10 (.00 4)...
Description 30V FETKY - MOSFET and Schottky Diode in a SO-8 package
FETKY MOSFET / SCHOTTKY DIODE
FETKY⑩ MOSFET / SCHOTTKY DIODE

File Size 113.54K  /  9 Page

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    IRF7807V

IRF[International Rectifier]
Part No. IRF7807V
OCR Text ... HEXFET Power MOSFET technology to achieve an unprecedented balance of on-resistance and gate charge. The reduction of conduction and switch...98 3 .99 A 6 5 H 0.2 5 (.0 10 ) M AM 5 8 E -A - 7 A1 B C D E e e1 H K 0 .10 (.00 4)...
Description N Channel Application Specific MOSFET

File Size 126.34K  /  8 Page

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    IRF7811AV IRF7811AVTR

International Rectifier
Part No. IRF7811AV IRF7811AVTR
OCR Text ... HEXFET Power MOSFET technology to achieve an unprecedented balance of on-resistance and gate charge. The reduced conduction and switching l...98 .01 8 .009 8 .196 .15 7 M ILLIM E T E R S M IN 1.3 5 0.1 0 0.3 6 0.19 4.80 3.8 1 M AX 1.75 0.2...
Description Si, SMALL SIGNAL, FET, MS-012AA
N-Channel Application-Specific MOSFETs

File Size 85.36K  /  6 Page

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    IRF9520NL IRF9520NS

IRF[International Rectifier]
Part No. IRF9520NL IRF9520NS
OCR Text ... advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching spee...98 IRF9520NS/L Electrical Characteristics @ TJ = 25C (unless otherwise specified) Parameter Dra...
Description Power MOSFET(Vdss=-100V/ Rds(on)=0.48ohm/ Id=-6.8A)
Power MOSFET(Vdss=-100V, Rds(on)=0.48ohm, Id=-6.8A)
Power MOSFET(Vdss=-100V Rds(on)=0.48ohm Id=-6.8A)

File Size 151.66K  /  10 Page

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    IRF9520N

IRF[International Rectifier]
Part No. IRF9520N
OCR Text ... advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching spee...98 IRF9520N Electrical Characteristics @ TJ = 25C (unless otherwise specified) V(BR)DSS V(BR)D...
Description Power MOSFET(Vdss=-100V Rds(on)=0.48ohm Id=-6.8A)
Power MOSFET(Vdss=-100V, Rds(on)=0.48ohm, Id=-6.8A)

File Size 91.94K  /  8 Page

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    IRF9530NL IRF9530NS IRF9530NSTRR

IRF[International Rectifier]
Part No. IRF9530NL IRF9530NS IRF9530NSTRR
OCR Text ... advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching spee...98 IRF9530NS/L Electrical Characteristics @ TJ = 25C (unless otherwise specified) Parameter Dra...
Description Power MOSFET(Vdss=-100V/ Rds(on)=0.20ohm/ Id=-14A)
Power MOSFET(Vdss=-100V, Rds(on)=0.20ohm, Id=-14A)

File Size 169.24K  /  10 Page

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    IRF9530N

IRF[International Rectifier]
Part No. IRF9530N
OCR Text ... advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching spee...98 IRF9530N Electrical Characteristics @ TJ = 25C (unless otherwise specified) V(BR)DSS V(BR)D...
Description Power MOSFET(Vdss=-100V, Rds(on)=0.20ohm, Id=-14A)

File Size 109.25K  /  8 Page

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    IRF9540NL IRF9540NS IRF9540NSTRL

IRF[International Rectifier]
Part No. IRF9540NL IRF9540NS IRF9540NSTRL
OCR Text ... advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching spee...98 IRF9540NS/L Electrical Characteristics @ TJ = 25C (unless otherwise specified) Parameter Dra...
Description Power MOSFET(Vdss=-100V/ Rds(on)=0.117ohm/ Id=-23A)
Power MOSFET(Vdss=-100V, Rds(on)=0.117ohm, Id=-23A)

File Size 183.18K  /  10 Page

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