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  puls Datasheet PDF File

For puls Found Datasheets File :: 3031    Search Time::1.766ms    
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    BUP401

Siemens Semiconductor G...
Siemens Semiconductor Group
Part No. BUP401
OCR Text ...rge VGE = (QGate) parameter: IC puls = 15 A 20 V Typ. capacitances C = f (VCE) parameter: VGE = 0 V, f = 1 MHz 10 1 nF VGE 16 14 12 10 8 C 100 V 300 V 10 0 Ciss 10 -1 6 4 2 0 0 10 -2 0 Coss Crss 10 20 ...
Description From old datasheet system
IGBT (Low forward voltage drop High switching speed Low tail current Latch-up free Avalanche rated)

File Size 148.84K  /  8 Page

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    C67078-S1343-A2 BUZ92

Infineon
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
Part No. C67078-S1343-A2 BUZ92
OCR Text ...rge VGS = (QGate) parameter: ID puls = 5 A 16 V 200 EAS 180 160 VGS 12 10 140 120 100 6 80 60 40 2 20 0 20 0 40 60 80 100 120 C 160 0 5 10 15 20 25 30 35 nC 45 4 8 0,2 VDS max 0,8 VDS max Tj Q Gate Drain-source b...
Description Power MOSFET
From old datasheet system
SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated)

File Size 176.27K  /  9 Page

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    BSM75GD120DN2 075D12N2 C67070-A2516-A67

SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
Part No. BSM75GD120DN2 075D12N2 C67070-A2516-A67
OCR Text ...rge VGE = (QGate) parameter: IC puls = 75 A 20 V Typ. capacitances C = f (VCE) parameter: VGE = 0 V, f = 1 MHz 10 2 nF VGE 16 14 12 10 8 C 600 V 800 V 10 1 Ciss 10 0 6 4 2 0 0 10 -1 0 Coss Crss 100 200...
Description IGBT Power Module (Solderable Power module 3-phase full-bridge Including fast free-wheel diodes) 103 A, 1200 V, N-CHANNEL IGBT
From old datasheet system

File Size 185.11K  /  9 Page

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    BSP170P Q67041-S4018

SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
Part No. BSP170P Q67041-S4018
OCR Text ...e VGS = f (QGate) parameter: ID puls =-1.9A BSP 170 P 16 60 EAS 55 50 45 40 35 30 25 20 VGS 12 10 8 0,2 VDS max 6 0,8 VDS max 4 15 10 5 0 20 40 60 80 100 120 2 C Tj 150 0 0 2 4 6 8 10 ...
Description SIPMOS Power Transistor (P-Channel Enhancement mode Avalanche rated dv/dt rated) 1.9 A, 60 V, 0.3 ohm, P-CHANNEL, Si, POWER, MOSFET
High Speed CMOS 8-Channel Analog Multiplexer/Demultiplexer 16-SOIC -55 to 125
SIPMOS ? Power Transistor
From old datasheet system

File Size 151.13K  /  9 Page

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    BSP171P Q67041-S4019

SIEMENS AG
Infineon
SIEMENS[Siemens Semiconductor Group]
Part No. BSP171P Q67041-S4019
OCR Text ...ot Tj Tstg IAR EAR dv/dt EAS ID puls ID Value -1.8 -1.15 -7.2 70 -1.8 0.18 6 Unit A mJ A mJ KV/s 14 1.8 -55 ...+150 -55 ...+150 55/150/56 V W C Semiconductor Group 1 04 / 1998 BSP 171 P Preliminary data Electrica...
Description High Speed CMOS 8-Channel Analog Multiplexer/Demultiplexer 16-SOIC -55 to 125
SIPMOS Power Transistor (P-Channel Enhancement mode Avalanche rated Logic Level dv/dt rated)
SIPMOS ? Power Transistor
From old datasheet system

File Size 58.72K  /  5 Page

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    BTS100 C67078-A5007-A2 BTS100E3044A BTS100S-3789DELCO BTS100E3045A

Siemens Semiconductor G...
Infineon
SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
Part No. BTS100 C67078-A5007-A2 BTS100E3044A BTS100S-3789DELCO BTS100E3045A
OCR Text ... V VDS VDGR VGS ID ID-ISO ID puls ISC PSCmax Ptot Tj, Tstg - - TC = 25 C Tj = - 55 ... + 150 C Short circuit dissipation, Tj = - 55 ... + 150 C Power dissipation Operating and storage temperature range DIN humidity category, DIN 4...
Description P-Channel TEMPFET
Smart Highside Power Switch TEMPFET (P channel Enhancement mode Temperature sensor with thyristor characteristic)
From old datasheet system

File Size 301.68K  /  9 Page

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    BUZ104L C67078-S1358-A2 BUZ104LE3046

SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
Infineon
Part No. BUZ104L C67078-S1358-A2 BUZ104LE3046
OCR Text ...rge VGS = (QGate) parameter: ID puls = 26 A 16 V EAS 28 24 VGS 12 10 20 8 16 12 8 4 0 20 6 0,2 VDS max 0,8 VDS max 4 2 0 40 60 80 100 120 140 C 180 Tj 0 4 8 12 16 nC 24 Q Gate Drain-sou...
Description SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated Logic Level d v/d t rated Low on-resistance) SIPMOS功率晶体管(N通道增强模式雪崩额定逻辑电平dv /额定的胸苷低电阻
From old datasheet system
SIPMOS ? Power Transistor
N-Channel SIPMOS Power Transistor

File Size 210.09K  /  9 Page

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    BUZ104SL-4

SIEMENS[Siemens Semiconductor Group]
SIEMENS AG
Infineon Technologies AG
Part No. BUZ104SL-4
OCR Text ...rge VGS = (QGate) parameter: ID puls = 3 A 16 V mJ EAS 40 VGS 12 10 30 8 0,2 VDS max 0,8 VDS max 6 20 4 10 2 0 0 0 20 40 60 80 100 120 140 C Tj 180 2 4 6 8 10 12 1...
Description Quad-Channel SIPMOS Power Transistor
SIPMOS ? Power Transistor
SIPMOS Power Transistor (Quad-channel Enhancement mode Logic level Avalanche-rated d v/d t rated) 3.2 A, 55 V, 0.125 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET
3.2 A, 55 V, 0.125 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET PLASTIC, DSO-28

File Size 89.18K  /  8 Page

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    BUZ104SL Q67040-S4006-A2

Infineon
SIEMENS[Siemens Semiconductor Group]
Part No. BUZ104SL Q67040-S4006-A2
OCR Text ...rge VGS = (QGate) parameter: ID puls = 12 A 16 V mJ EAS VGS 40 12 10 30 8 0,2 VDS max 6 0,8 VDS max 20 4 10 2 0 20 40 60 80 100 120 140 C Tj 0 180 0 2 4 6 8 10 12 14 16 nC 20 Q Gate Drain-source breakdown vo...
Description SIPMOS Power Transistor (N channel Enhancement mode Logic Level Avalanche-rated dv/dt rated 175°C operating temperature)
SIPMOS Power Transistor (N channel Enhancement mode Logic Level Avalanche-rated dv/dt rated 175C operating temperature)
SIPMOS ? Power Transistor
SIPMOS Power Transistor (N channel Enhancement mode Logic Level Avalanche-rated dv/dt rated 175∑C operating temperature)

File Size 124.66K  /  8 Page

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    BUZ104S Q67040-S4007-A2

SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
Infineon
Part No. BUZ104S Q67040-S4007-A2
OCR Text ...rge VGS = (QGate) parameter: ID puls = 14 A 16 V mJ EAS VGS 40 12 10 0,2 VDS max 30 8 0,8 VDS max 6 20 4 10 2 0 20 40 60 80 100 120 140 C Tj 0 180 0 1 2 3 4 5 6 7 nC 9 Q Gate Drain-source breakdown voltage V(BR)DS...
Description SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated dv/dt rated 175∑C operating temperature) 14 A, 55 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220
SIPMOS ? Power Transistor
SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated dv/dt rated 175C operating temperature)
SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated dv/dt rated 175°C operating temperature)

File Size 126.55K  /  8 Page

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For puls Found Datasheets File :: 3031    Search Time::1.766ms    
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