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  pseudomorphic Datasheet PDF File

For pseudomorphic Found Datasheets File :: 275    Search Time::2.094ms    
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    Filtronic Compound Semi...
FILTRONIC[Filtronic Compound Semiconductors]
Part No. LP7612
OCR Text ...allium Arsenide (AlGaAs/InGaAs) pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam directwrite 0.25 m by 200 m Schottky barrier gate. The recessed "mushroom" gate structure minimizes parasitic gate-source an...
Description HIGH DYNAMIC RANGE PHEMT

File Size 38.11K  /  2 Page

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    AGILENT TECHNOLOGIES INC
Agilent (Hewlett-Packard)
HP[Agilent(Hewlett-Packard)]
Part No. ATF-58143-BLK ATF-58143-TR2G ATF-58143 ATF-58143-BLKG ATF-58143-TR1 ATF-58143-TR1G ATF-58143-TR2
OCR Text pseudomorphic HEMT in a Surface Mount Plastic Package Data Sheet Features * Low noise and high linearity performance * Enhancement Mode Technology[1] * Excellent uniformity in product specifications Description Agilent Technologies's ATF-...
Description C BAND, Si, N-CHANNEL, RF SMALL SIGNAL, HEMFET
ATF-58143 · Single Voltage E-pHEMT Low Noise 30.5 dBm OIP3 in SC-70
Low Noise Enhancement Mode pseudomorphic HEMT in a Surface Mount Plastic Package

File Size 146.26K  /  10 Page

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    ATF-53189

Agilent (Hewlett-Packard)
Agilent(Hewlett-Packard)
Part No. ATF-53189
OCR Text pseudomorphic HEMT in SOT 89 Package Data Sheet Features * Single voltage operation * High Linearity and Gain * Low Noise Figure * Excellent uniformity in product specifications * SOT 89 standard package * Point MTTF > 300 years[2] * MSL-...
Description ATF-53189 · Single Voltage E-pHEMT Low Noise 40 dBm OIP3 in SOT-89 package
Enhancement Mode pseudomorphic HEMT in SOT 89 Package

File Size 141.68K  /  14 Page

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    ATF-531P8 ATF-531P8-BLK ATF-531P8-TR2 ATF-531P8-TR1 DEMO-ATF-5X1P8 ATF-531P8-TR1G

Agilent (Hewlett-Packard)
HP[Agilent(Hewlett-Packard)]
Part No. ATF-531P8 ATF-531P8-BLK ATF-531P8-TR2 ATF-531P8-TR1 DEMO-ATF-5X1P8 ATF-531P8-TR1G
OCR Text pseudomorphic HEMT in 2x2 mm2 LPCC [3] Package Data Sheet Features * Single voltage operation * High linearity and gain * Low noise figure Description Agilent Technologies's ATF-531P8 is a single-voltage high linearity, low noise E-pHEMT ...
Description DEMO-ATF-5X1P8 · Demonstration circuit board for ATF-501P8, ATF-511P8, ATF-521P8 and ATF-531P8 (2 GHz)
ATF-531P8 · Single Voltage E-pHEMT Low Noise 38 dBm OIP3 in LPCC
High Linearity Enhancement Mode pseudomorphic HEMT in 2x2 mm LPCC Package

File Size 139.39K  /  16 Page

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    LP7512

Filtronic Compound Semiconductors
Part No. LP7512
OCR Text ...allium Arsenide (AlGaAs/InGaAs) pseudomorphic High Electron Mobility Transistor (PHEMT), utilizing an Electron-Beam directwrite 0.25 m by 200 m Schottky barrier gate. The recessed "mushroom" gate structure minimizes parasitic gate-source an...
Description ULTRA LOW NOISE PHEMT

File Size 35.39K  /  2 Page

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    FPD750DFN

Filtronic Compound Semiconductors
Part No. FPD750DFN
OCR Text ...ed depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor (pHEMT). It utilizes a 0.25 m x 750 m Schottky barrier Gate, defined by high-resolution stepper-based photolithography. The recessed and offset Gate structure m...
Description LOW NOISE, HIGH LINEARITY PACKAGED PHEMTT

File Size 160.11K  /  5 Page

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    FPD750SOT89

Filtronic Compound Semiconductors
Part No. FPD750SOT89
OCR Text ...ed depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor (pHEMT). It utilizes a 0.25 m x 750 m Schottky barrier Gate, defined by high-resolution stepper-based photolithography. The recessed and offset Gate structure m...
Description LOW NOISE, HIGH LINEARITY PACKAGED PHEMT

File Size 383.54K  /  8 Page

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    FPD750

Filtronic Compound Semiconductors
Part No. FPD750
OCR Text ... The FPD750 is an AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor (PHEMT), featuring a 0.25 m by 750 m Schottky barrier gate, defined by high-resolution stepper-based photolithography. The recessed and offset Gate structure mi...
Description 0.5W POWER PHEMT

File Size 172.52K  /  2 Page

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    FPD750SOT343

Filtronic Compound Semiconductors
Part No. FPD750SOT343
OCR Text ...ed depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor (pHEMT). It utilizes a 0.25 m x 750 m Schottky barrier Gate, defined by high-resolution stepper-based photolithography. The recessed and offset Gate structure m...
Description LOW NOISE, HIGH LINEARITY PACKAGED PHEMT

File Size 99.94K  /  4 Page

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    Agilent (Hewlett-Packard)
HP[Agilent(Hewlett-Packard)]
Part No. MGA-725M4 MGA725M4 MGA-725M4-BLK MGA-725M4-TR1 MGA-725M4-TR2 DEMO-MGA-725M4
OCR Text ...Agilent's cost effective PHEMT (pseudomorphic High Electron Mobility Transistor). It is housed in the MiniPak 1412 package. It is part of the Agilent Technologies CDMAdvantage RF chipset. Ax Pin Connections and Package Marking GROUND O...
Description MGA-725M4 · 3V LNA with Bypass Switch, 2 to 14dBm Adjustable IIP3, MiniPak Package
DEMO-MGA-725M4 · Demonstration circuit board for MGA-725M4 (2 GHz)
Low Noise Amplifier with Bypass Switch In Miniature Leadless Package

File Size 178.99K  /  20 Page

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For pseudomorphic Found Datasheets File :: 275    Search Time::2.094ms    
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