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For process-ing Found Datasheets File :: 5504 Search Time::3.359ms
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				IRF[International Rectifier]
Part No.	IRFR120N IRFU120N IRFR IRFR120NTR IRFR120NTRL IRFR120NTRR IRFU120NPBF
OCR Text	Process Technology Fast Switching Fully Avalanche Rated D VDSS = 100V G S RDS(on) = 0.21 ID = 9.4A Description Fifth Generatio...ing le P u lse 10 100 1.4 1000 A V S D , S ourc e-to-D rain V oltage (V ) V D S , D ...
Description	Power MOSFET(Vdss=100V, Rds(on)=0.21ohm, Id=9.4A) (IRFR120N / IRFU120N) HEXFET Power MOSFET HEXFET® Power MOSFET 100V Single N-Channel HEXFET Power MOSFET in a D-Pak package 100V Single N-Channel HEXFET Power MOSFET in a I-Pak package 9.1 A, 100 V, 0.21 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-252AA
File Size	145.98K / 10 Page	View it Online	Download Datasheet

				FAIRCHILD[Fairchild Semiconductor]
Part No.	NDH8301N
OCR Text	...hnology. This very high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for lo...ing bo x whic h comes in di fferent sizes depend in g on t he nu mber of parts shippe d. F63TNR L...
Description	Dual N-Channel Enhancement Mode Field Effect Transistor
File Size	210.16K / 10 Page	View it Online	Download Datasheet

				Lattice Semiconductor, Corp. Lattice Semiconductor Corporation LATTICE[Lattice Semiconductor]
Part No.	GAL20RA10 GAL20RA10B-10LJ GAL20RA10B-10LP GAL20RA10B-15LJ GAL20RA10B-15LP GAL20RA10B-20LJ GAL20RA10B-20LJI GAL20RA10B-20LP GAL20RA10B-20LPI GAL20RA10B-30LJ GAL20RA10B-30LP GAL20RA10B-7LJ
OCR Text	...ombines a high performance CMOS process with electrically erasable (E2) floating gate technology to provide the highest speed performance av...ing" of an independent output enable product term and a common active low output enable pin (pin 13 ...
Description	High-Speed Asynchronous E2CMOS PLD Generic Array Logic EE PLD, 15 ns, PDIP24 High-Speed Asynchronous E2CMOS PLD Generic Array Logic⑩
File Size	236.89K / 15 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRFR3910 IRFU3910 IRFRU3910
OCR Text	...ight Lead (IRFU3910) l Advanced Process Technology l Fast Switching l Fully Avalanche Rated Description l D VDSS = 100V G S RDS(o...ing le P u lse 10 1m s 10m s 100 1000 A V S D , S ourc e-to-D rain V oltage (V ) V D...
Description	RECT SCHOTTKY 60V 5A POWERMITE3 Power MOSFET(Vdss=100V, Rds=0.115ohm, Id=16A)
File Size	137.93K / 10 Page	View it Online	Download Datasheet

				ST Microelectronics STMicroelectronics 意法半导
Part No.	M41T11 M41T11M M41T11MH M41T11SH M41TMH6TR
OCR Text	...completion of the surface mount process. Insertion of the SNAPHAT housing after reflow prevents potential battery and crystal damage due to the high temperatures required for device surfacemounting. The SNAPHAT housing is keyed to prevent r...
Description	512 bit 64b x8 Serial Access TIMEKEEPER SRAM
File Size	135.50K / 19 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF520L IRF520NS
OCR Text	Process Technology Surface Mount (IRF520NS) Low-profile through-hole (IRF520NL) 175C Operating Temperature Fast Switching Fully Avalanche Ra...ing le P u lse 10 100 1.4 1000 A V S D , S ourc e-to-D rain V oltage (V ) V D S , D ...
Description	Power MOSFET(Vdss=100V, Rds(on)=0.20ohm, Id=9.7A)
File Size	181.26K / 10 Page	View it Online	Download Datasheet

				International Rectifier, Corp.
Part No.	IRF520N
OCR Text	Process Technology Dynamic dv/dt Rating 175C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS = 100V G S RDS(on) ...ing le P u lse 10 100 1.4 1000 A V S D , S ourc e-to-D rain V oltage (V ) V D S , D ...
Description	Power MOSFET(Vdss = 100 V, Rds(on) = 0.20 Ohm, Id= 9.7A) 功率MOSFET（减振钢板基本\u003d 100伏，的Rds（on）\u003d 0.20欧姆，身份证\u003d 9.7A Power MOSFET(Vdss = 100 V/ Rds(on) = 0.20 Ohm/ Id= 9.7A) Power MOSFET(Vdss = 100 V, Rds(on) = 0.20 Ohm, Id= 9.7A)
File Size	113.03K / 8 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF520V
OCR Text	Process Technology Ultra Low On-Resistance l Dynamic dv/dt Rating l 175C Operating Temperature l Fast Switching l Fully Avalanche Rated l Op...ING P E R A N S I Y 1 4.5M , 1 9 82. 2 C O N TR O L LIN G D IM E N S IO N : IN C H 2 .92 (.11 5) ...
Description	Power MOSFET(Vdss=100V, Rds(on)=0.165ohm, Id=9.6A)
File Size	146.01K / 8 Page	View it Online	Download Datasheet

				IRF[International Rectifier] International Rectifier, Corp.
Part No.	IRFZ44NL IRFZ44NS IRFZ44NSTRR IRFZ44NLPBF IRFZ44NSPBF IRFZ44NSTRL
OCR Text	Process Technology Surface Mount (IRFZ44NS) l Low-profile through-hole (IRFZ44NL) l 175C Operating Temperature l Fast Switching l Fully Aval...ing le P u lse 10 10m s A 100 3.0 V S D , S ource-to-D rain V oltage (V ) V D S , D...
Description	55V Single N-Channel HEXFET Power MOSFET in a D2-Pak package 55V Single N-Channel HEXFET Power MOSFET in a TO-262 package HEXFET? Power MOSFET Power MOSFET(Vdss=55V, Rds(on)=0.0175ohm, Id=49A) (IRFZ44NL / IRFZ44NS) Power MOSFET TRANSISTOR \| MOSFET \| N-CHANNEL \| 55V V(BR)DSS \| 49A I(D) \| TO-263AB 晶体管\| MOSFET的\| N沟道\| 55V的五（巴西）直\| 49A条（丁）\|63AB
File Size	150.74K / 10 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRFZ44N IRFZ44 IRFZ44NPBF
OCR Text	Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175C Operating Temperature Fast Switching Fully Avalanche Rated D VDSS...ING P E R A N S I Y 1 4.5M , 1 9 82. 2 C O N TR O L LIN G D IM E N S IO N : IN C H 2 .92 (.11 5) ...
Description	55V Single N-Channel HEXFET Power MOSFET in a TO-220AB package Power MOSFET(Vdss=55V, Rds(on)=17.5mohm, Id=49A)
File Size	98.67K / 8 Page	View it Online	Download Datasheet

For process-ing Found Datasheets File :: 5504 Search Time::3.359ms
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