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NEC Corp. NEC[NEC]
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Part No. |
NE664M04-T2 NE664M04
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OCR Text |
...unted on 38 x 38 mm, t = 0.4 mm polyimide PCB.
Junction to Ambient Resistance2 C/W
Note: 1. Mounted on 38 x 38 mm, t = 0.4 mm polyimide PCB. 2. Stand alone device in free air.
APPLICATIONS
Bluetooth Power Class 1 f = 2.4 GHz
T8... |
Description |
MEDIUM POWER NPN SILICON HIGH FREQUENCY TRANSISTOR
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File Size |
126.05K /
9 Page |
View
it Online |
Download Datasheet |
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CEL[California Eastern Labs]
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Part No. |
NE664M04-T2-A NE664M04
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OCR Text |
...unted on 38 x 38 mm, t = 0.4 mm polyimide PCB.
Junction to Ambient Resistance2 C/W
Note: 1. Mounted on 38 x 38 mm, t = 0.4 mm polyimide PCB. 2. Stand alone device in free air.
APPLICATIONS
Bluetooth Power Class 1 f = 2.4 GHz
T8... |
Description |
MEDIUM POWER NPN SILICON HIGH FRQUENCY TRANSISTOR
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File Size |
195.30K /
10 Page |
View
it Online |
Download Datasheet |
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RENESAS[Renesas Electronics Corporation]
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Part No. |
HRC0203C
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OCR Text |
.... See from Fig.3 to Fig.5, with polyimide board. 2. 10 msec sine wave 1 pulse.
Electrical Characteristics
(Ta = 25C)
Item Forward voltage Symbol VF1 VF2 Reverse current Thermal resistance Note: IR Rth(j-a) Min -- -- -- -- Typ -- -- -- ... |
Description |
Diodes>Switching Silicon Schottky Barrier Diode for Rectifying
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File Size |
87.39K /
8 Page |
View
it Online |
Download Datasheet |
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Price and Availability
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