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plateau Datasheet PDF File

For plateau Found Datasheets File :: 3832 Search Time::1.032ms
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				SIEMENS[Siemens Semiconductor Group] SIEMENS AG Infineon Technologies AG
Part No.	BUZ104SL-4
OCR Text	...D = 3.2 A, VGS =0 to 10 V Gate plateau voltage V(plateau) VDD = 40 V, ID = 3.2 A Semiconductor Group Preliminary data BUZ 104SL-4 Electrical Characteristics, at Tj = 25C, unless otherwise specified Parameter Symbol min. Rev...
Description	Quad-Channel SIPMOS Power Transistor SIPMOS ? Power Transistor SIPMOS Power Transistor (Quad-channel Enhancement mode Logic level Avalanche-rated d v/d t rated) 3.2 A, 55 V, 0.125 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET 3.2 A, 55 V, 0.125 ohm, 4 CHANNEL, N-CHANNEL, Si, POWER, MOSFET PLASTIC, DSO-28
File Size	89.18K / 8 Page	View it Online	Download Datasheet

				Infineon SIEMENS[Siemens Semiconductor Group]
Part No.	BUZ104SL Q67040-S4006-A2
OCR Text	...= 12.5 A, V GS =0 to 10 V V (plateau) 13.44 20 V Gate plateau voltage V DD = 40 V, ID = 12.5 A - 4 - Semiconductor Group 3 29/Jan/1998 BUZ 104 SL SPP13N05L Electrical Characteristics, at Tj = 25C, unles...
Description	SIPMOS Power Transistor (N channel Enhancement mode Logic Level Avalanche-rated dv/dt rated 175°C operating temperature) SIPMOS Power Transistor (N channel Enhancement mode Logic Level Avalanche-rated dv/dt rated 175C operating temperature) SIPMOS ? Power Transistor SIPMOS Power Transistor (N channel Enhancement mode Logic Level Avalanche-rated dv/dt rated 175∑C operating temperature)
File Size	124.66K / 8 Page	View it Online	Download Datasheet

				SIEMENS AG SIEMENS[Siemens Semiconductor Group] Infineon
Part No.	BUZ104S Q67040-S4007-A2
OCR Text	...= 13.5 A, V GS =0 to 10 V V (plateau) 9.5 14 V Gate plateau voltage V DD = 40 V, ID = 13.5 A Semiconductor Group 3 5.9 29/Jan/1998 BUZ 104 S SPP14N05 Electrical Characteristics, at Tj = 25C, unless otherwise sp...
Description	SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated dv/dt rated 175∑C operating temperature) 14 A, 55 V, 0.1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220 SIPMOS ? Power Transistor SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated dv/dt rated 175C operating temperature) SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated dv/dt rated 175°C operating temperature)
File Size	126.55K / 8 Page	View it Online	Download Datasheet

				SIEMENS AG SIEMENS[Siemens Semiconductor Group]
Part No.	BUZ110SL Q67040-S4004-A2
OCR Text	...ID = 80 A, VGS =0 to 10 V V (plateau) 110 165 V Gate plateau voltage V DD = 40 V, ID = 80 A - 4.5 - Semiconductor Group 3 28/Jan/1998 BUZ 110 SL SPP80N05L Electrical Characteristics, at Tj = 25C, unless...
Description	High Speed CMOS Logic 7-Stage Binary Ripple Counter 14-TSSOP -55 to 125 SIPMOS Power Transistor (N channel Enhancement mode Logic Level Avalanche-rated dv/dt rated) From old datasheet system
File Size	119.33K / 8 Page	View it Online	Download Datasheet

				SIEMENS[Siemens Semiconductor Group]
Part No.	BUZ111SL Q67040-S4003-A2 BUZ111
OCR Text	...ID = 80 A, VGS =0 to 10 V V (plateau) 155 232 V Gate plateau voltage V DD = 40 V, ID = 80 A - 3.4 - Semiconductor Group 3 28/Jan/1998 BUZ111SL SPP80N05L Electrical Characteristics, at Tj = 25C, unless o...
Description	From old datasheet system SIPMOS Power Transistor (N channel Enhancement mode Logic Level Avalanche-rated dv/dt rated)
File Size	118.31K / 8 Page	View it Online	Download Datasheet

				SIEMENS AG SIEMENS[Siemens Semiconductor Group]
Part No.	BUZ111 BUZ111S Q67040-S4003-A2
OCR Text	...ID = 80 A, VGS =0 to 10 V V (plateau) 125 185 V Gate plateau voltage V DD = 40 V, ID = 80 A Semiconductor Group 3 5.45 28/Jan/1998 BUZ111S SPP80N05 Electrical Characteristics, at Tj = 25C, unless otherwise spec...
Description	High Speed CMOS Logic 7-Stage Binary Ripple Counter 14-TSSOP -55 to 125 SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated dv/dt rated) From old datasheet system
File Size	120.08K / 8 Page	View it Online	Download Datasheet

				INTERSIL[Intersil Corporation]
Part No.	FSTYC9055D FSTYC9055D1 FSTYC9055D3 FSTYC9055R FSTYC9055R1 FSTYC9055R3 FSTYC9055R4 FN4755
OCR Text	...Qg(TOT) Qg(12) Qg(TH) Qgs Qgd V(plateau) CISS COSS CRSS RJC VDS = -48V, VGS = 0V VGS = 20V VGS = -12V, ID = 64A ID = 41A, VGS = -12V Gate to Source Leakage Current Drain to Source On-State Voltage Drain to Source On Resistance T...
Description	Radiation Hardened/ SEGR Resistant P-Channel Power MOSFETs Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs From old datasheet system
File Size	73.87K / 8 Page	View it Online	Download Datasheet

				INTERSIL[Intersil Corporation]
Part No.	FSYC9055D FSYC9055D1 FSYC9055D3 FSYC9055R FSYC9055R1 FSYC9055R3 FSYC9055R4
OCR Text	...Charge Source Gate Charge Drain plateau Voltage Input Capacitance Output Capacitance Reverse Transfer Capacitance Thermal Resistance Junction to Case IDSS IGSS VDS(ON) rDS(ON)12 td(ON) tr td(OFF) tf Qg(TOT) Qg(12) Qg(TH) Qgs Qgd V(PLATEA...
Description	Radiation Hardened/ SEGR Resistant P-Channel Power MOSFETs Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs
File Size	51.24K / 8 Page	View it Online	Download Datasheet

For plateau Found Datasheets File :: 3832 Search Time::1.032ms
Page :: | 1 | 2 | 3 | 4 | 5 | <6> | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |