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n p-channel Datasheet PDF File

For n p-channel Found Datasheets File :: 49994 Search Time::3.797ms
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				HARRIS SEMICONDUCTOR INTERSIL[Intersil Corporation] Intersil, Corp.
Part No.	IRF234 IRF235 IRF236 IRF237
OCR Text	n-Channel Power MOSFETs Description These are n-Channel enhancement mode silicon gate power field effect transistors. They are advanced po...P-n Junction Diode G D MIn - TYP - MAX 8.1 32 UnITS A A S Source to Drain Diode V...
Description	8.1A and 6.5A/ 275V and 250V/ 0.45 and 0.68 Ohm/ n-Channel Power MOSFETs 8.1A and 6.5A, 275V and 250V, 0.45 and 0.68 Ohm, n-Channel Power MOSFETs 6.5 A, 275 V, 0.68 ohm, n-CHAnnEL, Si, POWER, MOSFET, TO-204AA
File Size	68.51K / 7 Page	View it Online	Download Datasheet

				INTERSIL[Intersil Corporation]
Part No.	IRF244 IRF245 IRF246 IRF247
OCR Text	n-Channel Power MOSFETs Description These are n-Channel enhancement mode silicon gate power field effect transistors. They are advanced po...P-n Junction Diode G D MIn - TYP - MAX 14 56 UnITS A A S Source to Drain Diode Vo...
Description	14A and 13A, 275V and 250V, 0.28 and 0.34 Ohm, n-Channel Power MOSFETs 14A and 13A/ 275V and 250V/ 0.28 and 0.34 Ohm/ n-Channel Power MOSFETs
File Size	70.04K / 7 Page	View it Online	Download Datasheet

				International Rectifier, Corp. IRF[International Rectifier]
Part No.	IRF2807L IRF2807S IRF2807STRL-111 IRF2807STRR
OCR Text	...ntegral reverse --- --- 280 S p-n junction diode. --- --- 1.2 V TJ = 25C, IS = 43A, VGS = 0V --- 100 150 ns TJ = 25C, IF = 43A --- 410 610 nC di/dt = 100A/s Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Repetiti...
Description	HEXFET Power MOSFET HEXFET功率MOSFET 75V Single n-Channel HEXFET Power MOSFET in a D2-Pak package 75V Single n-Channel HEXFET Power MOSFET in a TO-262 package
File Size	122.50K / 10 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRF2807
OCR Text	...ntegral reverse --- --- 280 S p-n junction diode. --- --- 1.2 V TJ = 25C, IS = 43A, VGS = 0V --- 100 150 ns TJ = 25C, IF = 43A --- 410 610 nC di/dt = 100A/s Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Repetiti...
Description	Power MOSFET(Vdss=75V, Id=82A?) Power MOSFET(Vdss=75V, Id=82A)
File Size	149.88K / 8 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF3205L IRF3205S IRF3205
OCR Text	...ntegral reverse --- --- 390 S p-n junction diode. --- --- 1.3 V TJ = 25C, IS = 62A, VGS = 0V --- 69 104 ns TJ = 25C, IF = 62A --- 143 215 nC di/dt = 100A/s Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Repetitiv...
Description	Power MOSFET(Vdss=55V, Rds(on)=8.0mohm, Id=110A?) Power MOSFET(Vdss=55V, Rds(on)=8.0mohm, Id=110A)
File Size	144.83K / 10 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF3205 IRF3205PBF
OCR Text	...ntegral reverse --- --- 390 S p-n junction diode. --- --- 1.3 V TJ = 25C, IS = 62A, VGS = 0V --- 69 104 ns TJ = 25C, IF = 62A --- 143 215 nC di/dt = 100A/s Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) Repetitiv...
Description	55V Single n-Channel HEXFET Power MOSFET in a TO-220AB package Power MOSFET(Vdss=55V, Rds(on)=8.0mohm, Id=110A? Power MOSFET(Vdss=55V, Rds(on)=8.0mohm, Id=110A) Power MOSFET(Vdss=55V, Rds(on)=8.0mohm, Id=110A?) Power MOSFET(Vdss=55V/ Rds(on)=8.0mohm/ Id=110A)
File Size	91.40K / 8 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF3315S IRF3315L
OCR Text	...integral reverse --- --- 84 S p-n junction diode. --- --- 1.3 V TJ = 25C, IS = 43A, VGS = 0V --- 174 260 ns TJ = 25C, IF = 43A --- 1.2 1.7 C di/dt = 100A/s Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) notes: Re...
Description	Power MOSFET(Vdss=150V Rds(on)=0.082ohm Id=21A) Power MOSFET(Vdss=150V, Rds(on)=0.082ohm, Id=21A)
File Size	193.12K / 10 Page	View it Online	Download Datasheet

				International Rectifier
Part No.	IRF3315
OCR Text	...ntegral reverse --- --- 108 S p-n junction diode. --- --- 1.3 V TJ = 25C, IS = 12A, VGS = 0V --- 174 260 ns TJ = 25C, IF = 12A --- 1.2 1.7 C di/dt = 100A/s Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) notes: ...
Description	Power MOSFET(Vdss=150V, Rds(on)=0.07ohm, Id=27A)
File Size	121.12K / 8 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF3415L IRF3415S
OCR Text	...ntegral reverse --- --- 150 S p-n junction diode. --- --- 1.3 V TJ = 25C, IS = 22A, VGS = 0V --- 260 390 ns TJ = 25C, IF = 22A --- 2.2 3.3 C di/dt = 100A/s Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) notes: ...
Description	Power MOSFET(Vdss=150V/ Rds(on)=0.042ohm/ Id=43A) Power MOSFET(Vdss=150V, Rds(on)=0.042ohm, Id=43A) Power MOSFET(Vdss=150V Rds(on)=0.042ohm Id=43A)
File Size	152.65K / 10 Page	View it Online	Download Datasheet

				IRF[International Rectifier]
Part No.	IRF3415
OCR Text	...howing the G integral reverse p-n junction diode. TJ = 25C, IS = 22A, VGS = 0V TJ = 25C, IF = 22A di/dt = 100A/s D S notes: Repetitive rating; pulse width limited by max. junction temperature. ( See fig. 11 ) ISD 22A, d...
Description	Power MOSFET(Vdss=150V/ Rds(on)=0.042ohm/ Id=43A) Power MOSFET(Vdss=150V, Rds(on)=0.042ohm, Id=43A) Power MOSFET(Vdss=150V Rds(on)=0.042ohm Id=43A)
File Size	90.69K / 8 Page	View it Online	Download Datasheet

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