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Amphion Semiconductor Ltd.
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| Part No. |
512-CHANNEL-ADPCM
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| OCR Text |
...outputs
Coding State Storage memor y
Figure 1: 512-Channel ADPCM Block Diagram
Functional Description
The Amphion ADPCM core consists of 5 primary sections: a PCM Input Expander, an ADPCM Transcoding Engine, a PCM Output Compresso... |
| Description |
512-Channel ADPCM
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| File Size |
84.45K /
6 Page |
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Spansion Inc. Spansion, Inc.
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| Part No. |
DL324 DL323 DL322 AM29DL323GB120EF AM29DL323GT120EF AM29DL324GT120EF AM29DL324GB120EF AM29DL324GB30EF AM29DL324GB30EFN AM29DL324GB40EF AM29DL324GB40EFN AM29DL324GB70EF AM29DL324GB90EF AM29DL324GT30EF AM29DL324GT30EFN AM29DL324GT40EF AM29DL324GT40EFN AM29DL324GT70EF AM29DL324GT90EF AM29DL324GB30PCF AM29DL324GB30PCFN AM29DL324GB30PCI AM29DL324GB40PCF AM29DL324GB30PCIN AM29DL323GB120WMIN AM29DL323GB70WMI AM29DL322GB70WMI AM29DL322GB120EF AM29DL324GB120WMF AM29DL324GB30EI AM29DL324GB30EIN D323GT90UI D324GB90UI D324GB90UF AM29DL323GB120WMF AM29DL323GT120EI AM29DL323GT120WMIN AM29DL323GT30EI AM29DL324GB70WMIN AM29DL323GB30EFN AM29DL323GB30PCFN AM29DL323GB30EIN AM29DL324GT30WDIN AM29DL322GB120WMI AM29DL322GB120WMF AM29DL324GT90EI AM29DL322GB70EF AM29DL324GB40PCIN AM29DL322GB40PCF AM29DL322GT40EFN AM29DL322GT40WDF
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| OCR Text |
...32 megabit, 3.0 volt-only flash memor y devices, organized as 2,097,152 words of 16 bits each or 4,194,304 bytes of 8 bits each. Word mode data appears on DQ15-DQ0; byte mode data appears on DQ7-DQ0. The device is designed to be programmed ... |
| Description |
32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash memory 2M X 16 FLASH 3V PROM, 120 ns, PBGA48 32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash memory 2M X 16 FLASH 3V PROM, 70 ns, PBGA48 32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash memory 2M X 16 FLASH 3V PROM, 120 ns, PDSO48 32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash memory 32兆位个M × 8 2米x 16位).0伏的CMOS只,同时作业快闪记忆 32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash memory 32兆位4个M × 8 2米x 16位).0伏的CMOS只,同时作业快闪记忆 32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash memory 32兆位M × 8 2米x 16位).0伏的CMOS只,同时作业快闪记忆 32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash memory 2M X 16 FLASH 3V PROM, 90 ns, PDSO48 32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash memory 2M X 16 FLASH 3V PROM, 70 ns, PDSO48
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| File Size |
874.73K /
58 Page |
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Atmel
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| Part No. |
AT29BV010A
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| OCR Text |
...rammable and Erasable Read Only memor y (Flash). Its 1 megabit of memory is organized as 131,072 words by 8 bits. Manufactured with Atmel's advanced nonvolatile CMOS EEPROM technology, the device offers access times to 120 ns, and a low 54 ... |
| Description |
1M bit, 2.7-Volt Read and 2.7-Volt Write Flash
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| File Size |
207.76K /
15 Page |
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it Online |
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Price and Availability
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