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International Rectifier, Corp.
IRF[International Rectifier]
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| Part No. |
IRF3709 IRF3709L IRF3709S IRF370B9L IRF370B9S F3709S
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| OCR Text |
...rce Voltage
1000
10000
ISD , Reverse Drain Current (A)
OPERATION IN THIS AREA LIMITED BY RDS(on) TJ = 150 C
ID , Drain Curre...5
IRF3709/3709S/3709L
EAS , Single Pulse Avalanche Energy (mJ)
1200
15 V
1000
VDS
L
... |
| Description |
Power MOSFET(Vdss=30V, Rds(on)max=9.0mohm, Id=90A?
Power MOSFET(Vdss=30V, Rds(on)max=9.0mohm, Id=90A 功率MOSFET（减振钢板基本\u003d 30V的，的Rds（on）最大值\u003d 9.0mohm，身份证\u003d 90A型?
Power MOSFET(Vdss=30V/ Rds(on)max=9.0mohm/ Id=90A)
Power MOSFET(Vdss=30V, Rds(on)max=9.0mohm, Id=90A)
Power MOSFET(Vdss=30V, Rds(on)max=9.0mohm, Id=90A?)
Power MOSFET(Vdss=30V, Rds(on)max=9.0mohm, Id=90A??
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| File Size |
120.60K /
11 Page |
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it Online |
Download Datasheet
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IRF[International Rectifier]
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| Part No. |
IRF3711 IRF3711L IRF3711S
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| OCR Text |
...HIS AREA LIMITED BY R DS(on)
ISD , Reverse Drain Current (A)
100
TJ = 150 C
ID, Drain-to-Source Current (A)
1000
10
10...5
IRF3711/3711S/3711L
15V
EAS , Single Pulse Avalanche Energy (mJ)
1400
TOP BOTTOM
1... |
| Description |
Power MOSFET(Vdss=20V, Rds(on)max=6.0mohm, Id=110A??
Power MOSFET(Vdss=20V/ Rds(on)max=6.0mohm/ Id=110A)
Power MOSFET(Vdss=20V, Rds(on)max=6.0mohm, Id=110A?)
Power MOSFET(Vdss=20V, Rds(on)max=6.0mohm, Id=110A)
Power MOSFET(Vdss=20V, Rds(on)max=6.0mohm, Id=110A?
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| File Size |
243.87K /
11 Page |
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it Online |
Download Datasheet |
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ST Microelectronics
STMICROELECTRONICS[STMicroelectronics]
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| Part No. |
STB11NB40T4 STB11NB40 STB11NB40-1
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| OCR Text |
...mited by safe operating area 2. ISD 11A, di/dt 200 A/s, VDD V(BR)DSS, Tj TJMAX
Table 4. Thermal Data
Symbol Rthj-case Rthj-amb Tl Pa...5 300 Unit C/W C/W C
Maximum Lead Temperature For Soldering Purpose
Table 5. Avalanche Charact... |
| Description |
N-CHANNEL 400V - 0.48 Ohm - 10.7A D2PAK/I2PAK PowerMESH" MOSFET
N-CHANNEL 400V - 0.48ohm - 10.7A DPAK/IPAK PowerMESH MOSFET
From old datasheet system
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| File Size |
243.88K /
11 Page |
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it Online |
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STMICROELECTRONICS[STMicroelectronics]
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| Part No. |
STB100NH02LT4 B100NH02L STB100NH02L
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| OCR Text |
...acteristics
Table 5.
Symbol ISD ISDM (1) VSD (2) trr Qrr IRRM
Source drain diode
Parameter Source-drain current Source-drain current (pulsed) Forward on voltage ISD = 30A, VGS = 0 35 35 2 Test conditions Min. Typ. Max. 60 240 1.3 Un... |
| Description |
N-CHANNEL 24V - 0.0052ohm - 60A D2PAK STripFET TM III POWER MOSFET
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| File Size |
382.33K /
13 Page |
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it Online |
Download Datasheet |
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International Rectifier, Corp.
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| Part No. |
IRF4905 IRF4B905 IRF4905PBF
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| OCR Text |
...emperature. ( See fig. 11 )
ISD -38A, di/dt -270A/s, VDD V(BR)DSS ,
TJ 175C
Starting TJ = 25C, L = 1.3mH
RG = 25, IAS = -38A. ...5.5V - 5.0V BOTT OM - 4. 5V TOP
1000
-ID , D ra in -to -S o u rce C u rre n t (A )
-ID , D ... |
| Description |
Power MOSFET(Vdss=-55V, Rds(on)=0.02ohm, Id=-74A) 功率MOSFET（减振钢板基本\u003d- 55V的，的Rds（on）\u003d 0.02ohm，身份证\u003d- 74A条）
-55V Single P-Channel HEXFET Power MOSFET in a TO-220AB package
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| File Size |
104.67K /
8 Page |
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it Online |
Download Datasheet |
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