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  isd-1 Datasheet PDF File

For isd-1 Found Datasheets File :: 11197    Search Time::1.735ms    
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    IRF3709 IRF3709L IRF3709S IRF370B9L IRF370B9S F3709S

International Rectifier, Corp.
IRF[International Rectifier]
Part No. IRF3709 IRF3709L IRF3709S IRF370B9L IRF370B9S F3709S
OCR Text ...rce Voltage 1000 10000 ISD , Reverse Drain Current (A) OPERATION IN THIS AREA LIMITED BY RDS(on) TJ = 150 C ID , Drain Curre...1 10 10ms 0.1 0.2 V GS = 0 V 0.8 1.4 2.0 2.6 1 1 TC = 25 C TJ = 150 C Single Puls...
Description Power MOSFET(Vdss=30V, Rds(on)max=9.0mohm, Id=90A?
Power MOSFET(Vdss=30V, Rds(on)max=9.0mohm, Id=90A 功率MOSFET(减振钢板基本\u003d 30V的,的Rds(on)最大值\u003d 9.0mohm,身份证\u003d 90A型?
Power MOSFET(Vdss=30V/ Rds(on)max=9.0mohm/ Id=90A)
Power MOSFET(Vdss=30V, Rds(on)max=9.0mohm, Id=90A)
Power MOSFET(Vdss=30V, Rds(on)max=9.0mohm, Id=90A?)
Power MOSFET(Vdss=30V, Rds(on)max=9.0mohm, Id=90A??

File Size 120.60K  /  11 Page

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    IRF3710L IRF3710S

International Rectifier, Corp.
IRF[International Rectifier]
Part No. IRF3710L IRF3710S
OCR Text ...o application note #AN-994. ISD 28A, di/dt 460A/s, VDD V(BR)DSS, IRF3710S/L 1000 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5...1 0.1 1 20 s P U LS E W ID TH TC = 2 5C 10 100 A 1 0.1 2 0 s P U L S E W ID T H T C = ...
Description Power MOSFET(Vdss=100V, Rds(on)=0.025ohm, Id=57A) 功率MOSFET(减振钢板基本\u003d 100V的,的Rds(on)\u003d 0.025ohm,身份证\u003d 57A条)
Power MOSFET(Vdss=100V/ Rds(on)=0.025ohm/ Id=57A)
Power MOSFET(Vdss=100V Rds(on)=0.025ohm Id=57A)

File Size 180.61K  /  10 Page

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    IRF3710 IRF3710PBF

International Rectifier, Corp.
IRF[International Rectifier]
Part No. IRF3710 IRF3710PBF
OCR Text ... temperature. (See fig. 11) ISD 28A, di/dt 380A/s, VDD V(BR)DSS, TJ 175C Starting TJ = 25C, L = 0.70mH Pulse width 400s; d...1 3.5V 1 20s PULSE WIDTH Tj = 25C 0.1 0.1 1 10 100 0.1 0.1 1 20s PULSE WIDTH Tj = 175C 1...
Description Power MOSFET(Vdss=100V, Rds(on)=23mohm, Id=57A) 功率MOSFET(减振钢板基本\u003d 100V的,的Rds(on)\u003d 23mohm,身份证\u003d 57A条)
Power MOSFET(Vdss=100V Rds(on)=23mohm Id=57A)
100V Single N-Channel HEXFET Power MOSFET in a TO-220AB package

File Size 92.57K  /  8 Page

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    IRF3711 IRF3711L IRF3711S

IRF[International Rectifier]
Part No. IRF3711 IRF3711L IRF3711S
OCR Text ...HIS AREA LIMITED BY R DS(on) ISD , Reverse Drain Current (A) 100 TJ = 150 C ID, Drain-to-Source Current (A) 1000 10 100 100sec 1msec TJ = 25 C 1 10 Tc = 25C Tj = 150C Single Pulse 1 1 10 VDS , Drain-toSource...
Description Power MOSFET(Vdss=20V, Rds(on)max=6.0mohm, Id=110A??
Power MOSFET(Vdss=20V/ Rds(on)max=6.0mohm/ Id=110A)
Power MOSFET(Vdss=20V, Rds(on)max=6.0mohm, Id=110A?)
Power MOSFET(Vdss=20V, Rds(on)max=6.0mohm, Id=110A)
Power MOSFET(Vdss=20V, Rds(on)max=6.0mohm, Id=110A?

File Size 243.87K  /  11 Page

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    IRF3717

IRF[International Rectifier]
Part No. IRF3717
OCR Text ... Drain-to-Source Current (A) ISD, Reverse Drain Current (A) 100 T J = 25C 1.00 10 T A = 25C 100sec 1msec 10msec 1 10 100 0.10 0.0 0.2 0.4 0.6 0.8 1.0 VGS = 0V 1.2 1.4 Tj = 150C Single Pulse 1 0 VSD, Source-to-Drai...
Description HEXFETPower MOSFET

File Size 246.14K  /  10 Page

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    IRF3805 IRF3805L IRF3805S

International Rectifier
Part No. IRF3805 IRF3805L IRF3805S
OCR Text ...ource Current (A) TJ = 175C ISD , Reverse Drain Current (A) OPERATION IN THIS AREA LIMITED BY R DS (on) 100.0 1000 100 100sec 10.0 TJ = 25C 1.0 10 1 VGS = 0V 0.1 0.0 0.4 0.8 1.2 1.6 2.0 2.4 Tc = 25C Tj...
Description AUTOMOTIVE MOSFET

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    IRF3808L IRF3808S RF3808S

IRF[International Rectifier]
International Rectifier, Corp.
Part No. IRF3808L IRF3808S RF3808S
OCR Text ..., IAS = 82A. (See Figure 12). S ISD 82A, di/dt 310A/s, VDD V(BR)DSS, TJ 175C T Pulse width 400s; duty cycle 2%. Parameter Continuou...1.3 V TJ = 25C, IS = 82A, VGS = 0VT --- 93 140 ns TJ = 25C, IF = 82A --- 340 510 nC di/dt = 100A/s T...
Description 75V Single N-Channel HEXFET Power MOSFET in a D2-Pak package
75V Single N-Channel HEXFET Power MOSFET in a TO-262 package
AUTOMOTIVE MOSFET
Power MOSFET(Vdss=75V, Rds(on)=0.007ohm, Id=106A?)
Power MOSFET(Vdss=75V, Rds(on)=0.007ohm, Id=106A)
Power MOSFET(Vdss=75V/ Rds(on)=0.007ohm/ Id=106A)
Power MOSFET(Vdss=75V, Rds(on)=0.007ohm, Id=106A 功率MOSFET(减振钢板基本\u003d 75V的,的Rdson)\u003d 0.007ohm,身份证\u003d 106A章?

File Size 159.77K  /  11 Page

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    IRF3808 IRF3808PBF

International Rectifier
Part No. IRF3808 IRF3808PBF
OCR Text ..., IAS = 82A. (See Figure 12). S ISD 82A, di/dt 310A/s, VDD V(BR)DSS, TJ 175C T Pulse width 400s; duty cycle 2%. U Coss eff. is a fi...1 0.1 1 20s PULSE WIDTH T J= 25 C 10 100 1 0.1 1 20s PULSE WIDTH T J= 175 C 10 100 ...
Description 75V Single N-Channel HEXFET Power MOSFET in a TO-220AB package
Power MOSFET(Vdss=75V, Rds(on)=0.007ohm, Id=140A)
Power MOSFET(Vdss=75V, Rds(on)=0.007ohm, Id=140A?)
Power MOSFET(Vdss=75V, Rds(on)=0.007ohm, Id=140A?

File Size 129.31K  /  9 Page

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    IRF4905L IRF4905S IRF4B905L IRF4905STRL IRF4905STRL-111 IRF4905STRR

International Rectifier, Corp.
Part No. IRF4905L IRF4905S IRF4B905L IRF4905STRL IRF4905STRL-111 IRF4905STRR
OCR Text ...o application note #AN-994. ISD -38A, di/dt -270A/s, VDD V(BR)DSS, IRF4905S/L 1000 VGS - 15V - 10V - 8.0V - 7.0V - 6.0V - 5.5V -...1 0.1 1 2 0 s PU LS E W ID TH TJ = 2 5C T c = 25C A 10 100 1 0.1 1 20 s PU LSE W ID TH TJ...
Description Power MOSFET(Vdss=-55V, Rds(on)=0.02ohm, Id=-74A) 功率MOSFET(减振钢板基本\u003d- 55V的,的Rds(on)\u003d 0.02ohm,身份证\u003d- 74A条)
Power MOSFET(Vdss=-55V/ Rds(on)=0.02ohm/ Id=-74A)
-55V Single P-Channel HEXFET Power MOSFET in a D2-Pak package
-55V Single P-Channel HEXFET Power MOSFET in a TO-262 package

File Size 159.46K  /  10 Page

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    IRF4905 IRF4B905 IRF4905PBF

International Rectifier, Corp.
Part No. IRF4905 IRF4B905 IRF4905PBF
OCR Text ...emperature. ( See fig. 11 ) ISD -38A, di/dt -270A/s, VDD V(BR)DSS , TJ 175C Starting TJ = 25C, L = 1.3mH RG = 25, IAS = -38A. (See Figure 12) Pulse width 300s; duty cycle 2%. IRF4905 1000 VGS - 15V - 10V - 8.0V - 7....
Description Power MOSFET(Vdss=-55V, Rds(on)=0.02ohm, Id=-74A) 功率MOSFET(减振钢板基本\u003d- 55V的,的Rds(on)\u003d 0.02ohm,身份证\u003d- 74A条)
-55V Single P-Channel HEXFET Power MOSFET in a TO-220AB package

File Size 104.67K  /  8 Page

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