Description |
10MS, 8 EIAJ SOIC, IND TEMP, GReeN, 2.7V(BIOS FLASH) 10MS, 8 SOIC, IND TEMP, GReeN, 2.7V(BIOS FLASH) die sale, 2.7V, 7 MIL(BIOS FLASH) 10MS, 8 SAP, IND, ROHS-B, 2.7V(BIOS FLASH) 8-SOIC,AUTO TEMP,2.7V(SERIAL ee) 10MS, 8 PDIP, IND TEMP, 2.7V(SERIAL ee) 10MS, 8 PDIP, EXT TEMP, GReeN,2.7V(SERIAL ee) 10MS, 8 TSSOP, INT TEMP, GReeN, 1.8V(SERIAL ee) 10MS, 8 PDIP, INT TEMP, GReeN, 2.7V(SERIAL ee) 10MS, die 1.8V, 11 mils THICKNESS(SERIAL ee) 10MS, 8 PDIP, IND TEMP, GReeN, 2.7V(SERIAL ee) 10MS, 8 PDIP, IND TEMP, GReeN,2.7V(SERIAL ee) 8 ULTRA THIN,MINI MAP,PB/HALO FRee,IND T(SERIAL ee) 现场可编程门阵列(FPGA 10MS, 8 SOIC, EXT TEMP, GReeN, 2.7V(SERIAL ee) 现场可编程门阵列(FPGA Field Programmable Gate Array (FPGA) 现场可编程门阵列(FPGA 10MS, 8 SOIC, INT TEMP, GReeN, 2.7V(SERIAL ee) 现场可编程门阵列(FPGA 10MS, 8 PDIP, EXT TEMP, GReeN, 2.7V(SERIAL ee)
|