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    MC34151-D

ON Semiconductor
Part No. MC34151-D
OCR Text ...r applications that require low current digital circuitry to drive large capacitive loads with high slew rates. these devices feature low in...source current diode clamp current (drive output to v cc ) i o i o(clamp) 1.5 1.0 a power dissipatio...
Description High Speed Dual MOSFET Drivers

File Size 168.37K  /  12 Page

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    Kersemi Electronic Co.,...
Part No. KSMD7P06
OCR Text ...-source voltage -60 v i d drain current - continuous (t c = 25c) -5.4 a - continuous (t c = 100c) -3.42 a i dm drain current - pulsed (note 1) -21.6 a v gss gate-source voltage 25 v e as single pulsed avalanche energy (note 2) 90 mj i ...
Description    60V P-Channel MOSFET

File Size 1,557.27K  /  8 Page

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    Kersemi Electronic Co.,...
Part No. KSMD7N65
OCR Text ... 20 v id continuous drain current - 1 7 a continuous drain current - t=100 mj pd power dissipation4 80 w ...source current and temperature fig...
Description    Excellent package for good heat dissipation.

File Size 674.11K  /  4 Page

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    Kersemi Electronic Co.,...
Part No. KSMD7N60
OCR Text ... 20 v id continuous drain current - 1 7 a continuous drain current - t=100 mj pd power dissipation4 80 w ...source current and temperature fig...
Description    Excellent package for good heat dissipation.

File Size 673.92K  /  4 Page

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    Kersemi Electronic Co.,...
Part No. KSMD7N10
OCR Text ...-source voltage 100 v i d drain current - continuous (t c = 25c) 5.8 a - continuous (t c = 100c) 3.67 a i dm drain current - pulsed (note 1) 23.2 a v gss gate-source voltage 25 v e as single pulsed avalanche energy (note 2) 50 mj i ar ...
Description    100V N-Channel MOSFET

File Size 1,157.61K  /  8 Page

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    Kersemi Electronic Co.,...
Part No. KSMD7N10L
OCR Text ...-source voltage 100 v i d drain current - continuous (t c = 25c) 5.8 a - continuous (t c = 100c) 3.67 a i dm drain current - pulsed (note 1) 23.2 a v gss gate-source voltage 20 v e as single pulsed avalanche energy (note 2) 50 mj i ar ...
Description    100V LOGIC N-Channel MOSFET

File Size 1,166.10K  /  8 Page

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    Kersemi Electronic Co.,...
Part No. KSMD7440
OCR Text ...0 v id continuous drain current - 1 180 a continuous drain current - t=100 mj pd power dissipation4 140 ...source leakage current v ds =20v, v ds =0a 100 na on characteristics v gs(th) gate ...
Description    Low gate charge.

File Size 620.57K  /  4 Page

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    TOSHIBA
Part No. SSM6K781G
OCR Text ...ltage gate-source voltage drain current (dc) drain current (pulsed) power dissipation power dissipation channel temperature storage temperature (t 10 s) (note 1) (note 1), (note 2) (note 3) (note 3) symbol v dss v gss i d i dp p d p d t ...
Description Small-signal MOSFET

File Size 227.29K  /  9 Page

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    ST Microelectronics
Part No. STC20DE90HP
OCR Text ...e voltage 20 v i c collector current 20 a i cm collector peak current (t p < 5ms) 60 a i b base current 5 a i bm base peak current (t p ...source current (v bs =v gs =0v) v cs(ss) =900v 100 a i bs(os) base-source current (i c =0, v g...
Description Hybrid Emitter Switched Bipolar Transistor

File Size 414.09K  /  11 Page

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    ST Microelectronics
Part No. STC20DE90HV
OCR Text ...e voltage 20 v i c collector current 20 a i cm collector peak current (t p < 5ms) 60 a i b base current 5 a i bm base peak current (t p ...source current (v bs =v gs =0v) v cs(ss) =900v 100 a i bs(os) base-source current (i c =0, v g...
Description Hybrid Emitter Switched Bipolar Transistor

File Size 387.74K  /  11 Page

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