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class-ab Datasheet PDF File

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				New Jersey Semi-Conductor Products, Inc. New Jersey Semi-Conductor P...
Part No.	BLF861A
OCR Text	... circuit. mode of operation cw, class-ab pal bg (tv); class-ab f (mhz) 860 860 (ch 69) vds (v) 32 32 pl (w) 150 >150 typ. 170 (peak sync) gp (db) >13.5 typ. 14.5 >14 tld {%) >50 >40 agp (db) <1 note 1 note 1. sync compression: input sync > ...
Description	UHF power LDMOS transistor
File Size	95.95K / 2 Page	View it Online	Download Datasheet

				Philips Semiconductors
Part No.	BLF6G10S-45
OCR Text	...ase = 25 c in a common source class-ab production test circuit. mode of operation f v ds p l(av) g p h d acpr (mhz) (v) (w) (db) (%) (dbc) 2-carrier w-cdma 920 to 960 28 1.0 23 8 - 48.5 [1] caution this device is sensitive to electrostati...
Description	Power LDMOS Transistor
File Size	113.04K / 10 Page	View it Online	Download Datasheet

				Motorola
Part No.	MRF20030RD
OCR Text	...r largeCsignal , commonCemitter class ab amplifier applications. suitable for frequency modulated, amplitude modulated and multiCcarrier base station rf power amplifiers. ? specified 26 volts, 2.0 ghz, class ab, twoCtones characteristics ou...
Description	MRF20030R 2 GHz, 30 W, 26 V Broadband RF Power Bipolar Transistor - Archived
File Size	86.39K / 8 Page	View it Online	Download Datasheet

				NXP Semiconductors N.V.
Part No.	BLF6G13L-250P BLF6G13LS-250P
OCR Text	...e =25 ? c; i dq = 100 ma; in a class-ab production test circuit. mode of operation f v ds p l(1db) g p ? d (ghz) (v) (w) (db) (%) cw 1.3 50 250 17 56 blf6g13l-250p_6g13ls-250p all information provided in this document is subject to legal...
Description	Product description250 W LDMOS power transistor intended for CW applications at a frequency of 1.3 GHz. Power LDMOS transistor BLF6G13LS-250P<SOT1121B (CDFM4)\|<<http://www.nxp.com/packages/SOT1121B.html<1<Always Pb-free,;
File Size	126.07K / 14 Page	View it Online	Download Datasheet

				NXP Semiconductors
Part No.	BLF6G20LS-110 BLF6G20-110
OCR Text	...Tcase = 25 C in a common source class-ab production test circuit. Mode of operation 2-carrier W-CDMA [1] f (MHz) 1930 to 1990 VDS (V) 28 PL(AV) (W) 25 Gp (dB) 19 D (%) 31 IMD3 (dBc) -37[1] ACPR (dBc) -40[1] Test sig...
Description	Power LDMOS transistor
File Size	65.23K / 9 Page	View it Online	Download Datasheet

				NXP Semiconductors
Part No.	BLF369
OCR Text	...rcuit.[1] Mode of operation CW, class AB 2-tone, class AB pulsed, class AB [1] [2] [2] f (MHz) 225 f1 = 225; f2 = 225.1 225 PL (W) 500 500 PL(PEP) (W) 500 - Gp (dB) 18 19 19 D (%) 60 47 55 IMD3 (dBc) -28 - Th is the h...
Description	Multi-use VHF power LDMOS transistornull
File Size	145.91K / 17 Page	View it Online	Download Datasheet

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