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For burst page Found Datasheets File :: 8057    Search Time::1.531ms    
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    SPANSION LLC
Part No. S98WS064RBOHI0023
OCR Text ...only si multaneous read/write, burst mode flash memory with 32 megabit (2m x 16-b it) cellularram data sheet (advance information) notice ...page, t he ordering information page, and pages with the dc characteristics table and the ac erase ...
Description SPECIALTY MEMORY CIRCUIT, PBGA88

File Size 310.28K  /  10 Page

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    Renesas Technology / Hitachi Semiconductor
Part No. HM66WP18513BP-65
OCR Text ...self-timed write cycle * ADV/LD burst control pins * Asynchronous output enable controlled three-state outputs * Individual byte write contr...page 2 of 31 HM66WP18513, HM66WP36257 Pin Arrangement (HM66WP36257) 100PIN-LQFP 100-pin LQFP ...
Description 9M Flow Through Zero Bus Latency (ZBL) SRAM

File Size 272.62K  /  31 Page

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    Renesas Technology / Hitachi Semiconductor
Part No. HM66AQB18204BP-33 HM66AQB36104BP-40 HM66AQB9404BP-33 HM66AQB18204BP-30 HM66AQB36104BP-30 HM66AQB36104BP-33 HM66AQB9404BP-30 HM66AQB18204BP-60 HM66AQB36104BP-60 HM66AQB9404BP-60 HM66AQB18204BP-40 HM66AQB9404BP-40 HM66AQB18204BP-50 HM66AQB36104BP-50 HM66AQB9404BP-50
OCR Text burst REJ03C0048-0003Z (Previous ADE-203-1331B (Z) Rev. 0.2) Preliminary Rev.0.03 Mar.31.2004 TM Description The HM66AQB36104 is a 1,0...page 1 of 28 HM66AQB36104/18204/9404 Features * 1.8 V 0.1 V power supply for core (VDD) * 1...
Description Memory>Fast SRAM>QDR SRAM
36-Mbit QDRTMII SRAM 4-word burst

File Size 250.71K  /  34 Page

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    Renesas Technology / Hitachi Semiconductor
Part No. HM66AQB18204BP-30
OCR Text ...404 36-Mbit QDR II SRAM 4-word burst TM ADE-203-1331B (Z) Preliminary Rev. 0.2 Jan. 14, 2003 Description The HM66AQB36104 is a 1,048,5...page 2 of 31 HM66AQB36104/18204/9404/8404 Pin Arrangement (HM66AQB36104) 165PIN-BGA 1 A B C D ...
Description 36 MBit QDR II SRAM 4 Word burst

File Size 265.98K  /  33 Page

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    Renesas Technology / Hitachi Semiconductor
Part No. HM66AQB18202BP-40 HM66AQB18202BP-50 HM66AQB18202BP-60 HM66AQB36102BP-60 HM66AQB9402BP-60 HM66AQB36102BP-40 HM66AQB9402BP-40 HM66AQB36102BP-50 HM66AQB9402BP-50
OCR Text burst REJ03C0049-0001Z (Previous ADE-203-1364 (Z) Rev. 0.0) Preliminary Rev.0.01 Mar.31.2004 TM Description The HM66AQB36102 is a 1,04...page 1 of 27 HM66AQB36102/18202/9402 Features * 1.8 V 0.1 V power supply for core (VDD) * 1...
Description Memory>Fast SRAM>QDR SRAM
36-Mbit QDRTMII SRAM 2-word burst

File Size 236.07K  /  31 Page

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    Renesas Technology / Hitachi Semiconductor
Part No. HM66AEB18205 HM66AEB18205BP-33 HM66AEB18205BP-30 HM66AEB36105BP-30 HM66AEB36105BP-33 HM66AEB9405BP-30 HM66AEB9405BP-33 HM66AEB36105BP-60 HM66AEB18205BP-60 HM66AEB9405BP-60 HM66AEB18205BP-40 HM66AEB36105BP-40 HM66AEB9405BP-40 HM66AEB18205BP-50 HM66AEB36105BP-50 HM66AEB9405BP-50
OCR Text burst REJ03C0047-0001Z (Previous ADE-203-1366 (Z) Rev. 0.0) Preliminary Rev.0.01 Apr.28.2004 Description The HM66AEB36105 is a 1,048,57...page 1 of 28 HM66AEB36105/18205/9405 Features * 1.8 V 0.1 V power supply for core (VDD) * 1...
Description Memory>Fast SRAM>QDR SRAM
36-Mbit DDR II SRAM Separate I/O 2-word burst

File Size 237.38K  /  32 Page

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    HY5V52LF

Hynix Semiconductor
Part No. HY5V52LF
OCR Text ...ed by a single control command (burst length of 1,2,4,8 or full page), an d the burst count sequence(se- quential or interleave). a burst of read or write cycles in progress can be terminated by a burst terminate command or can be interr...
Description 4Banks x 2M x 32bits Synchronous DRAM

File Size 348.61K  /  13 Page

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    Renesas Technology / Hitachi Semiconductor
Part No. HM66AEB18204BP-33 HM66AEB18204BP-40 HM66AEB18204BP-30 HM66AEB36104BP-30 HM66AEB36104BP-33 HM66AEB9404BP-30 HM66AEB9404BP-33 HM66AEB36104BP-60 HM66AEB18204BP-60 HM66AEB9404BP-60 HM66AEB36104BP-40 HM66AEB9404BP-40 HM66AEB18204BP-50 HM66AEB36104BP-50 HM66AEB9404BP-50
OCR Text burst REJ03C0045-0001Z (Previous ADE-203-1368 (Z) Rev. 0.0) Preliminary Rev.0.01 Apr.05.2004 Description The HM66AEB36104 is a 1,048,57...page 1 of 28 HM66AEB36104/18204/9404 Features * 1.8 V 0.1 V power supply for core (VDD) * 1...
Description Memory>Fast SRAM>QDR SRAM
36-Mbit DDR II SRAM 4-word burst

File Size 239.34K  /  32 Page

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    AS4LC4M16S0 AS4LC4M16S0-10FTC AS4LC4M16S0-10TC AS4LC4M16S0-75TC AS4LC4M16S0-8TC AS4LC8M8S0 AS4LC8M8S0-10FTC AS4LC8M8S0-1

ALSC[Alliance Semiconductor Corporation]
ETC
Part No. AS4LC4M16S0 AS4LC4M16S0-10FTC AS4LC4M16S0-10TC AS4LC4M16S0-75TC AS4LC4M16S0-8TC AS4LC8M8S0 AS4LC8M8S0-10FTC AS4LC8M8S0-10TC AS4LC8M8S0-75TC AS4LC8M8S0-8TC
OCR Text ...utomatic and direct precharge * burst read, single write operation * Can assert random column address in every cycle * LVTTL compatible I/O ...page) * Programmable burst sequence (sequential/interleaved) * Programmable CAS latency (2/3) Pin...
Description 3.3V 4Mx16 and 8Mx8 CMOS synchronous DRAM

File Size 387.58K  /  24 Page

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    HM5212325FBPC HM5212325FBPC-B60

HITACHI[Hitachi Semiconductor]
Hitachi,Ltd.
Part No. HM5212325FBPC HM5212325FBPC-B60
OCR Text ...imultaneously and independently burst read/write operation and burst read/single write operation capability Programmable burst length: 4/8/full page 2 variations of burst sequence Sequential (BL = 4/8/full page) Interleave (BL = 4/8) Prog...
Description    128M LVTTL interface SDRAM 100 MHz 1-Mword x 32-bit x 4-bank PC/100 SDRAM
4M X 32 SYNCHRONOUS DRAM, 6 ns, PBGA90

File Size 57.42K  /  13 Page

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