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HXJ
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| Part No. |
HXJ9006
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| OCR Text |
... % psr r ?? v dd 4.9v 5.1v 65 80 db
?? hxj9006 3w???? ????? www.sz...2.5v,rl=8,and po=150mw 0 0.02 0.04 0.06 0.08 0.1 0.12 0.14 100 10,000 frequency(hz) thd(%) thd vs fr... |
| Description |
HXJ9006
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| File Size |
575.31K /
10 Page |
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it Online |
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INFINEON TECHNOLOGIES AG
eupec GmbH
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| Part No. |
FF800R12KE3
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| OCR Text |
...17V Vge=15V Vge=13V Vge=11V Vge=9v
1,0
1,5
2,0
2,5 VCE [V]
3,0
3,5
4,0
4,5
5,0
4 (8)
DB_FF800R12KE3_2.0.xls 2002-07-30
Technische Information / technical information
IGBT-Module IGBT-Modules
FF800R12K... |
| Description |
Technische Information / technical information
1200 A, 1200 V, N-CHANNEL IGBT
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| File Size |
142.52K /
9 Page |
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it Online |
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MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric Corporation
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| Part No. |
M68757H 68757H
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| OCR Text |
... VDD=5-9.2V, Load VSWR <4:1 VDD=9v, Pin=50mW, PO=3W (VGG Adjust), ZL=20:1
Note. Above parameters, ratings, limits and test conditions are...2 60 50 40 30 20 1.0 f=896MHz VDD=7.2V VGG=3.5V ZG=ZL=50 0.1 1 10 INPUT POWER Pin (mW) 0.1 100 1.0 1... |
| Description |
From old datasheet system
RF POWER MODULE SILICON MOS FET POWER AMPLIFIER, 896-941MHz, 3W FM PORTABLE RADIO
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| File Size |
28.27K /
3 Page |
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it Online |
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YUAN
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| Part No. |
WRA12XXD-XW WRA48XXD-XW
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| OCR Text |
...ity (see figure 2). With 5V and 9v supplies the diode drop is generally too large to consider as a suitable means of connecting paralleled converters. This method also has a beat frequency that will superimpose itself over the ripple of the... |
| Description |
DC/DC Converter
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| File Size |
126.83K /
4 Page |
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it Online |
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Mitsubishi Electric
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| Part No. |
RD00HHS1
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| OCR Text |
...0.2
Vgs=3V Ta=+25C Vgs=10V Vgs=9v Vgs=8V Vgs=7V
Vds VS. Ciss CHARACTERISTICS 20
Ta=+25C f=1MHz
15 Ciss(pF) 10 5 0 0 5 10 Vds(V) 15 20
Vgs=6V
Vgs=5V
Vgs=4V
0.0 0 2 4 6 Vds(V) 8 10
Vds VS. Coss CHARACTERISTICS 20
Ta=+2... |
| Description |
RoHS Compliance
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| File Size |
148.65K /
6 Page |
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it Online |
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Mitsubishi Electric Corporation
MITSUBISHI[Mitsubishi Electric Semiconductor]
Mitsubishi Electric, Corp.
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| Part No. |
M68757L 68757L
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| OCR Text |
... VDD=5-9.2V, Load VSWR <4:1 VDD=9v, Pin=50mW, PO=3W (VGG Adjust), ZL=20:1
Note. Above parameters, ratings, limits and test conditions are...2 in PO T 70 60 50 40 30 1.0 f=806MHz VDD=7.2V VGG=3.5V ZG=ZL=50 0.1 1 10 INPUT POWER Pin (mW) 0.1 1... |
| Description |
From old datasheet system
RF POWER MODULE SILICON MOS FET POWER AMPLIFIER, 806-870MHz, 3W, FM PORTABLE RADIO
SILICON MOS FET POWER AMPLIFIER, 806-870MHz, 3W, FM PORTABLE RADIO 硅场效应晶体管功率放大器06 - 870MHzW，便携式收音机调
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| File Size |
28.58K /
3 Page |
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it Online |
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Quanzhou Jinmei Electronic ...
Mitsubishi Electric Semicon...
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| Part No. |
RD00HHS1 RD00HHS1-15
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| OCR Text |
...0.2
Vgs=3V Ta=+25C Vgs=10V Vgs=9v Vgs=8V Vgs=7V
Vds VS. Ciss CHARACTERISTICS 20
Ta=+25C f=1MHz
15 Ciss(pF) 10 5 0 0 5 10 Vds(V) 15 20
Vgs=6V
Vgs=5V
Vgs=4V
0.0 0 2 4 6 Vds(V) 8 10
Vds VS. Coss CHARACTERISTICS 20
Ta=+2... |
| Description |
RoHS Compliance, Silicon MOSFET Power Transistor 30MHz,0.3W
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| File Size |
122.09K /
6 Page |
View
it Online |
Download Datasheet |
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Price and Availability
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