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ADPOW[Advanced Power Technology]
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| Part No. |
APT8DQ60K3G APT8DQ60K3
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| OCR Text |
8a APT8DQ60K3 APT8DQ60K3G*
*G Denotes RoHS Compliant, Pb Free Terminal Finish.
ULTRAFAST SOFT RECOVERY RECTIFIER DIODE
(K3)
PRODUCT ...600v, TJ = 125C
500 16
053-4242 Rev A
pF
12-2005
VR = 600v
25
A
DYNAMIC CHAR... |
| Description |
ULTRAFAST SOFT RECOVERY RECTIFIER DIODE
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| File Size |
123.49K /
4 Page |
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INFINEON[Infineon Technologies AG]
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| Part No. |
Q67040-S4514 IKW08T120
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| OCR Text |
...infineon.com/igbt/ VCE 1200V IC 8a VCE(sat),Tj=25C 1.7V Tj,max 150C
E
P-TO-247-3-1 (TO-247AC)
Type IKW08T120
Package TO-247AC
...600v, VGE = 0/+15V, RG = 81)
VCE, COLLECTOR-EMITTER VOLTAGE Figure 2. Safe operating area (D = 0,... |
| Description |
LOW LOSS DUOPACK - IGBT IN TRENCH AND FIELDSTOP TECHNOLOGY WITH SOFT, FAST RECOVERY ANTI - PARALLEL EMCON HE DIODE
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| File Size |
335.58K /
15 Page |
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it Online |
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INFINEON[Infineon Technologies AG]
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| Part No. |
Q67040-S4650 IHP10T120
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| OCR Text |
... COLLECTOR CURRENT
15A
IC=8a IC=5A IC=2.5A
10A
5A TJ=150C 25C 0A 0V 2V 4V 6V 8V 10V 12V
0C
50C
100C
VGE, GATE-EMITTE...600v, VGE=0/15V, RG=81, Dynamic test circuit in Figure E)
RG, GATE RESISTOR Figure 10. Typical sw... |
| Description |
Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode
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| File Size |
331.26K /
14 Page |
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it Online |
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IRF[International Rectifier]
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| Part No. |
8ETX06PBF 8ETX06 8ETX06FP 8ETX06FPPBF
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| OCR Text |
... V V V A A pF nH IR = 100A IF = 8a, TJ = 25C IF = 8a, TJ = 150C VR = VR Rated TJ = 150C, VR = VR Rated VR = 600v Measured lead to lead 5mm from package body
IR
Reverse Leakage Current
-
CT LS
Junction Capacitance Series Induc... |
| Description |
Hyperfast Rectifier
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| File Size |
232.99K /
8 Page |
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it Online |
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Infineon Technologies A...
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| Part No. |
IPB60R120C7
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| OCR Text |
...31 0.120 - w v gs =10v, i d =7.8a, t j =25c v gs =10v, i d =7.8a, t j =150c gate resistance r g - 0.83 - w f =1mhz,opendrain table5...600vcoolmos?c7powertransistor ipb60r120c7 rev.2.0,2015-11-30 final data sheet table7rev... |
| Description |
CoolMOS?C7 is a revolutionary technology for high voltage power MOSFETs, designed according to the superjunction (SJ) principle and pioneered by Infineon Technologies.
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| File Size |
1,567.61K /
15 Page |
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Infineon Technologies A...
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| Part No. |
IPB60R080P7
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| OCR Text |
...1 0.080 - w v gs =10v, i d =11.8a, t j =25c v gs =10v, i d =11.8a, t j =150c gate resistance r g - 4.8 - w f =1mhz,opendrain table5...600vcoolmosap7powertransistor ipb60r080p7 rev.2.0,2017-09-29 final data sheet table7rev... |
| Description |
600v CoolMOSa P7 Power Transistor
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| File Size |
1,312.59K /
14 Page |
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it Online |
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International Rectifier, Corp.
IRF[International Rectifier]
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| Part No. |
8ETLPBF 8ETL 8ETL06FPPBF 8ETL06PBF 8ETLFP 8ETLFPPBF
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| OCR Text |
... V V V A A pF nH IR = 100A IF = 8a, TJ = 25C IF = 8a, TJ = 150C VR = VR Rated TJ = 150C, VR = VR Rated VR = 600v Measured lead to lead 5mm from package
0.96 1.05 0.81 0.86 0.05 20 17 8.0 5 100 -
IR
Reverse Leakage Current
-
C... |
| Description |
Ultra-low VF Hyperfast Rectifier for Discontinuous Mode PFC 超低VF Hyperfast整流器不连续模式PFC
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| File Size |
232.95K /
8 Page |
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it Online |
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