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IRF[International Rectifier]
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Part No. |
IRGPH40MD2
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OCR Text |
...25C -- 89 -- ns IC = 18a, V CC =800v -- 340 930 VGE = 15V, R G = 10 -- 510 930 Energy losses include "tail" and -- 2.1 -- diode reverse reco...8a -- 4.5 8.0 A TJ = 25C -- 6.2 11 TJ = 125C V R = 200V -- 140 380 nC TJ = 25C -- 335 880 TJ = 125C ... |
Description |
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY(Vces=1200V, @Vge=15V, Ic=18a)
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File Size |
69.40K /
2 Page |
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FAIRCHILD[Fairchild Semiconductor]
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Part No. |
FQI5N80 FQB5N80 FQI5N80TU
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OCR Text |
800v N-Channel MOSFET
General Description
These N-Channel enhancement mode power field effect transistors are produced using Fairchild's p...8a, 800v, RDS(on) = 2.6 @VGS = 10 V Low gate charge ( typical 25 nC) Low Crss ( typical 11 pF) Fast ... |
Description |
800v N-Channel QFET 800v N-Channel MOSFET
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File Size |
669.43K /
9 Page |
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it Online |
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ST Microelectronics STMICROELECTRONICS[STMicroelectronics]
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Part No. |
BUL98
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OCR Text |
...t (IB =0) Test Conditions VCE = 800v VCE = 800v VCE = 450V L = 25mH 450 9 _ _ IB =1A _ _ IB =1.8a __ _ IB =2.4A _ _ IB =1A _ _ IB =1.8a __ _ IB =2.4A V CE =5V V CE =5V IC =9A IB1 =1.8a RBB(off) =0 IC =9A IB1 =1.8a RBB(off) =0 (see figure 8)... |
Description |
High voltage fast-switching NPN power transistor
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File Size |
195.55K /
10 Page |
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it Online |
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