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INTEL[Intel Corporation]
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| Part No. |
DD28F032SA-100 DD28F032SA-070
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| OCR Text |
8) FlashFileTM MEMORY
n
Revolutionary Architecture 100% Backwards-Compatible with Intel 28F016SA Pipelined Command Execution Program du...Mword x 16, or 4 Mbyte x 8. The DD28F032SA is built using two 28F016SA chips encapsulated in a singl... |
| Description |
32-MBIT (2 MBIT X 16, 4 MBIT X 8) FlashFile MEMORY
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| File Size |
702.17K /
49 Page |
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it Online |
Download Datasheet
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HITACHI[Hitachi Semiconductor]
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| Part No. |
HM62W1400H
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| OCR Text |
...E A6 A7 A8 A9 A10 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 (Top view) 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 A21 A20 A19 A18 A17 A16 OE VSS VCC Dout A15 A14 A13 A12 A11 NC HM62W1400HTT/HLTT Series A0 A1 A2 A3 A4 A5 CS VCC VSS Din WE ... |
| Description |
4M High Speed SRAM (4-Mword x1-bit)
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| File Size |
74.12K /
14 Page |
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it Online |
Download Datasheet |
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RENESAS[Renesas Electronics Corporation]
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| Part No. |
R1LV1616HSA-5SI R1LV1616H-I R1LV1616HSA-4LI R1LV1616HSA-4SI
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| OCR Text |
8-bit)
REJ03C0195-0101 Rev.1.01 Nov.18.2004
Description
The R1LV1616H-I Series is 16-Mbit static RAM organized 1-Mword x 16-bit / 2-Mword x 8-bit. R1LV1616H-I Series has realized higher density, higher performance and low power consump... |
| Description |
Memory>Low Power SRAM
Wide Temperature Range Version 16 M SRAM (1-Mword 】 16-bit / 2-Mword 】 8-bit)
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| File Size |
145.96K /
21 Page |
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it Online |
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RENESAS[Renesas Electronics Corporation]
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| Part No. |
R1RP0404DGE-2PR R1RP0404D R1RP0404DGE-2LR
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| OCR Text |
...E# A5 A6 A7 A8 A9 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 (Top view) 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 A19 A18 A17 A16 A15 OE# I/O4 VSS VCC I/O3 A14 A13 A12 A11 A10 NC
Pin Description
Pin name A0 to A19 I/O1 to I/O4 CS# OE#... |
| Description |
Memory>Fast SRAM>Asynchronous SRAM
4M High Speed SRAM (1-Mword 】 4-bit)
4M High Speed SRAM (1-Mword × 4-bit)
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| File Size |
77.96K /
13 Page |
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it Online |
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RENESAS[Renesas Electronics Corporation]
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| Part No. |
R1RW0404DGE-2PR R1RW0404D R1RW0404DGE-2LR REJ03C0115-0100Z
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| OCR Text |
...tandby current : 5 mA (max) : 0.8 mA (max) (L-version) * Data retention current: 0.4 mA (max) (L-version) * Data retention voltage: 2 V (min) (L-version) * Center VCC and VSS type pin out
Rev.1.00, Mar.12.2004, page 1 of 11
R1RW0404D ... |
| Description |
Memory>Fast SRAM>Asynchronous SRAM
4M HIGH SPEED SRAM (1-MWORD X 4-BIT)
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| File Size |
77.35K /
13 Page |
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it Online |
Download Datasheet |
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INTEL[Intel Corporation]
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| Part No. |
VS28F016SV MS28F016SV
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| OCR Text |
8) FlashFile TM MEMORY
Y
VS28F016SV b 40 C to a 125 C SE2 Grade MS28F016SV b 55 C to a 125 C QML Certified SE1 Grade SmartVoltage Techno...Mword x 16 or 2 Mbyte x 8 The VS MS28F016SV includes thirty-two 64-KB (65 536 byte) blocks or thirty... |
| Description |
16-Mbit (1-Mbit x 16, 2-Mbit x 8) FlashFileTM MEMORY
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| File Size |
599.96K /
50 Page |
View
it Online |
Download Datasheet |
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Price and Availability
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