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Part No. |
AOL1418
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OCR Text |
...r ds(on) < 10.5m ? (v gs = 4.5v) general description the aol1418 uses advanced trench technology to provide excellent r ds(on) , low gat...20a total gate charge turn-on rise time turn-off delaytime v gs =10v, v ds =15v, r l =0.75 , r gen... |
Description |
N-Channel Enhancement Mode Field Effect Transistor N沟道增强型场效应
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File Size |
119.16K /
5 Page |
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ShenZhen FreesCale Electronics. Co., Ltd
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Part No. |
AOL1413
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OCR Text |
...v) r ds(on) < 36m ? (v gs = -5v) the aol1413 uses advanced trench technology to provide excellent r ds(on) and ultra-low low gate charg...20a, di/dt=100a/ s drain-source breakdown voltage on state drain current i d =-250ua, v gs =0v v ... |
Description |
P-Channel Enhancement Mode Field
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File Size |
465.00K /
6 Page |
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it Online |
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ShenZhen FreesCale Electronics. Co., Ltd
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Part No. |
AOL1404
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OCR Text |
5v) 45a r ds(on) (at v gs =4.5v) < 4m ? r ds(on) (at v gs = 2.5v) < 5.6m ? symbol v ds v gs i dm i as , i ar e as , e ar t j , t s...20a reverse transfer capacitance i f =20a, di/dt=500a/ s v gs =0v, v ds =10v, f=1mhz switching pa... |
Description |
20V N-Channel MOSFET
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File Size |
482.38K /
6 Page |
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it Online |
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Price and Availability
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