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Cypress Semiconductor, Corp.
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| Part No. |
CY7C1314BV18-167BZXC
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| OCR Text |
...12bv18 ? 1m x 18 cy7c1314bv18 ? 512k x 36 functional description the cy7c1310bv18, cy7c1910bv18, cy7c1312bv18, and cy7c1314bv18 are 1.8v syn...byte write select 0, 1, 2 and 3 ? active low . sampled on the rising edge of the k and k clocks d... |
| Description |
18-Mbit QDRII SRAM 2 Word Burst Architecture 512K X 36 QDR SRAM, 0.5 ns, PBGA165
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| File Size |
418.24K /
29 Page |
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Integrated Silicon Solution, Inc.
INTEGRATED SILICON SOLUTION INC
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| Part No. |
IS61VF102418A-6.5B2 IS61VF10241A-7.5B2I
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| OCR Text |
... available july 2010 256k x 72, 512k x 36, 1024k x 18 18mb synchronous flow-through static ram description the issi is61lf/vf25672a, is61lf/...byte enables allow individual bytes to be written. byte write operation is performed by using byte w... |
| Description |
256K x 72, 512K x 36, 1024K x 18 18Mb SYNCHRONOUS FLOW-THROUGH STATIC RAM 1M X 18 CACHE SRAM, 6.5 ns, PBGA119
1M X 18 CACHE SRAM, 7.5 ns, PBGA119
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| File Size |
301.70K /
35 Page |
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it Online |
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天津新技术产业园区管理委员会
Integrated Silicon Solution, Inc.
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| Part No. |
IS61LF51236A-6.5B2I-TR IS61VF102418A-6.5TQI
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| OCR Text |
... available july 2010 256k x 72, 512k x 36, 1024k x 18 18mb synchronous flow-through static ram description the issi is61lf/vf25672a, is61lf/...byte enables allow individual bytes to be written. byte write operation is performed by using byte w... |
| Description |
256K x 72, 512K x 36, 1024K x 18 18Mb SYNCHRONOUS FLOW-THROUGH STATIC RAM 1M X 18 CACHE SRAM, 6.5 ns, PQFP100
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| File Size |
301.70K /
35 Page |
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it Online |
Download Datasheet |
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天津新技术产业园区管理委员会
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| Part No. |
IS61LPS25636A-200B2I-TR IS61LPS25636A-200B3I-TR
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| OCR Text |
... foating. 256k x 36, 256k x 32, 512k x 18 9 mb synchronous pipelined, single cycle deselect static ram january 2010 fast access time ...byte write registers d clk q enable register ce d clk q enable delay register d clk q bwe bw(a-d) x1... |
| Description |
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| File Size |
579.96K /
35 Page |
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it Online |
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Cypress Semiconductor, Corp.
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| Part No. |
CY7C1412BV18-250BZC
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| OCR Text |
... write reg c c 1m x 18 array 18 512k x 36 array clk a (18:0) gen. k k control logic address register d [35:0] read add. decode read data reg...byte write select 0, 1, 2, and 3 ? active low . sampled on the rising edge of the k and k clocks ... |
| Description |
2MX18 QDR-II BURST 2 SRAM 2M X 18 QDR SRAM, 0.45 ns, PBGA165
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| File Size |
885.74K /
24 Page |
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it Online |
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天津新技术产业园区管理委员会
Integrated Silicon Solution, Inc.
INTEGRATED SILICON SOLUTION INC
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| Part No. |
IS61NLF25636A-7.5B2I-TR IS61NLF51218A-7.5B3I-TR IS61NVF51218A-6.5TQ IS61NVF51218A-6.5B3
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| OCR Text |
...ed as 256k words by 36 bits and 512k words by 18 bits, fabricated with issi 's advanced cmos technology. incorporating a 'no wait' state fe...byte enables allow individual bytes to be written. a burst mode pin (mode) defines the order of the... |
| Description |
256K x 36 and 512K x 18 9Mb, FLOW THROUGH (NO WAIT) STATE BUS SRAM 512K X 18 ZBT SRAM, 6.5 ns, PQFP100
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| File Size |
390.62K /
37 Page |
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it Online |
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