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Samsung
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| Part No. |
K9HAG08U1M
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| OCR Text |
...itleD 1G x 8 Bit / 2G x 8 Bit / 4G x 8 Bit NAND Flash Memory Revision History
Revision No
0.0 0.1 0.2 0.3 0.4
History
1. Initial issue 1.Technical Note is changed 1. Endurance is changed. (10K->1.5K) 1. 4bit/512Byte ECC->3bit/512Byte ... |
| Description |
Flash Memory
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| File Size |
836.10K /
44 Page |
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Samsung
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| Part No. |
K9NBG08U5M
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| OCR Text |
...Title 1G x 8 Bit / 2G x 8 Bit / 4G x 8 Bit NAND Flash Memory Revision History
Revision No
0.0 0.1 0.2 0.3 1.0
History
1. Initial issue 1. Technical note is changed 1. Icc value is changed
Draft Date
Mar. 1st. 2005 Apr. 1st. 2005 M... |
| Description |
NAND Flash Memory
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| File Size |
1,179.97K /
50 Page |
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SAMSUNG SEMICONDUCTOR CO. LTD.
Samsung Semiconductor Co., Ltd.
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| Part No. |
K7J641882M K7J643682M K7J641882M-FC16 K7J641882M-FC20 K7J641882M-FC25 K7J641882M-FC30 K7J643682M-FC16 K7J643682M-FC20 K7J643682M-FC25 K7J641882M-FECI16 K7J641882M-FECI25 K7J641882M-FECI20 K7J641882M-FECI30 K7J643682M-FECI16 K7J643682M-FECI20 K7J643682M-FECI25 K7J643682M-FECI30 K7J643682M-FC30
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| OCR Text |
...ply ( 1.8 v ) v ddq 4e,8e,4f,8f,4g,8g,3h,4h,8h,9h,4j,8j,4k,8k,4l,8l output power supply ( 1.5v or 1.8v ) v ss 2a,10a,4c,8c,4d-8d,5e-7e,6f,6g...bit sequential for both read and write operations. synchronous pipeline read and late write enable h... |
| Description |
72Mb M-die DDRII SRAM Specification 72Mb的M -模条DDRII规格的SRAM
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| File Size |
318.96K /
17 Page |
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SAMSUNG SEMICONDUCTOR CO. LTD.
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| Part No. |
K7R320982C K7R323682C-FC20 K7R323682C-FC25 K7R323682C-FCI20 K7R323682C-FCI30 K7R323682C-FC30 K7R323682C-FCI25 K7R323682C-FEC30 K7R323682C-FEC20 K7R323682C-FEC25 K7R323682C-FC250
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| OCR Text |
...upply (1.8 v) v ddq 4e,8e,4f,8f,4g,8g,3h,4h,8h,9h,4j,8j,4k,8k,4l,8l output power supply (1.5v or 1.8v) v ss 4c,8c,4d-8d,5e-7e,6f,6g,6h,6j,6k...bit sequential for both read and write operations . synchronous pipeline read and early writ e enabl... |
| Description |
1Mx36 & 2Mx18 & 4Mx9 QDR II b2 SRAM
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| File Size |
462.59K /
20 Page |
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Samsung semiconductor
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| Part No. |
K7S3236T4C08 K7S3218T4C
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| OCR Text |
...G,5H,7H,5J,7J,5K,7K 4E,8E,4F,8F,4G,8G,3H,4H,8H,9H,4J,8J,4K,8K,4L,8L 4C,8C,4D-8D,5E-7E,6F,6G,6H,6J,6K,5L-7L,4M,8M,4N,8N 10R 11R 2R 1R 2A,3A,1...bit sequential for both read and write operations, requiring two full clock bus cycles. Any request ... |
| Description |
1Mx36 & 2Mx18 QDR II b4 SRAM
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| File Size |
440.83K /
20 Page |
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Samsung semiconductor
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| Part No. |
K7R643684M07 K7R641884M K7R641884M-FC200 K7R641884M-FI250
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| OCR Text |
...G,5H,7H,5J,7J,5K,7K 4E,8E,4F,8F,4G,8G,3H,4H,8H,9H,4J,8J,4K,8K,4L,8L 4C,8C,4D-8D,5E-7E,6F,6G,6H,6J,6K,5L-7L,4M,8M,4N,8N 10R 11R 2R 1R 2A,10A,...bit sequential for both read and write operations, requiring tow full clock bus cycles. Any request ... |
| Description |
2Mx36 & 4Mx18 QDR II b4 SRAM
4M X 18 QDR SRAM, 0.45 ns, PBGA165
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| File Size |
446.19K /
19 Page |
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Samsung semiconductor
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| Part No. |
K7R643682M07 K7R640982M K7R643682M-FI160 K7R643682M-EC160 K7R643682M-FC160 K7R643682M-EC250 K7R643682M-FI250 K7R643682M-FC20T
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| OCR Text |
...G,5H,7H,5J,7J,5K,7K 4E,8E,4F,8F,4G,8G,3H,4H,8H,9H,4J,8J,4K,8K,4L,8L 4C,8C,4D-8D,5E-7E,6F,6G,6H,6J,6K,5L-7L,4M,8M,4N,8N 10R 11R 2R 1R 2A,10A ...bit sequential for both read and write operations. Synchronous pipeline read and early write enable ... |
| Description |
2Mx36 & 4Mx18 & 8Mx9 QDR II b2 SRAM
2M X 36 QDR SRAM, 0.5 ns, PBGA165
2M X 36 QDR SRAM, 0.45 ns, PBGA165
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| File Size |
457.02K /
20 Page |
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it Online |
Download Datasheet |
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