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NXP Semiconductors N.V.
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| Part No. |
BLF7G22L-250P BLF7G22LS-250P
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| Description |
250 W LDMOS power transistor for base station applications at frequencies from 2110 MHz to 2170 MHz.
Power LDMOS transistor BLF7G22L-250P<SOT539A (SOT539A)|<<http://www.nxp.com/packages/SOT539A.html<1<Always Pb-free,;BLF7G22L-250P<SOT539A (SOT539A)|<<http://www.nxp.com/packages/SOT539A.html<1<Always Pb-free,;
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| File Size |
887.79K /
14 Page |
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it Online |
Download Datasheet
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Freescale (Motorola)
MOTOROLA[Motorola, Inc]
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| Part No. |
MRF5S21090LSR3 MRF5S21090L MRF5S21090LR3
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| Description |
2170 MHz, 19 W AVG., 2 x W–CDMA, 28 V Lateral N–Channel RF Power MOSFET
MRF5S21090L MRF5S21090LR3 MRF5S21090LSR3 2170 MHz, 19 W Avg., 2 x CDMA, 28 V Lateral N-Channel RF Power MOSFETs
RF Power Field Effect Transistors
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| File Size |
578.61K /
12 Page |
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it Online |
Download Datasheet |
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Freescale (Motorola)
MOTOROLA[Motorola, Inc]
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| Part No. |
MRF5S21100LSR3 MRF5S21100LR3 MRF5S21100L
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| Description |
2170 MHz, 23 W Avg., 2 x W–CDMA, 28 V Lateral N–Channel RF Power MOSFET
MRF5S21100L, MRF5S21100LR3, MRF5S21100LSR3 2170 MHz, 23 W Avg., 2 x W-CDMA, 28 V Lateral N-Channel RF Power MOSFETs
The RF MOSFET Line RF Power Field Effect N-Channel Enhancement-Mode Lateral MOSFETs
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| File Size |
561.39K /
12 Page |
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it Online |
Download Datasheet |
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Price and Availability
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