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  2-mword Datasheet PDF File

For 2-mword Found Datasheets File :: 210    Search Time::2.984ms    
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    HM62W4100H HM62W4100HJP-12 HM62W4100HJP-15 HM62W4100HLJP-12 HM62W4100HLJP-15

Hitachi,Ltd.
HITACHI[Hitachi Semiconductor]
Part No. HM62W4100H HM62W4100HJP-12 HM62W4100HJP-15 HM62W4100HLJP-12 HM62W4100HLJP-15
OCR Text ...ng CMOS process (4-transistor + 2-poly resistor memory cell) and high speed circuit designing technology. It is most appropriate for the application which requires high speed and high density memory, such as cache and buffer memory in syste...
Description 4M High Speed SRAM (1-Mword x 4-bit)

File Size 67.05K  /  13 Page

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    HM64YGB36100 HM64YGB36100BP-33

Renesas Electronics Corporation
Part No. HM64YGB36100 HM64YGB36100BP-33
OCR Text ... of the device. features ? 2.5 v 5% operation and 1.5 v (v ddq ) ? 32-mbit density ? synchronous register to register operation ? internal self-timed late write ? byte write control (4 byte write selects, one for each 9-bit)...
Description 32M Synchronous Late Write Fast Static RAM (1-Mword × 36-bit)

File Size 204.22K  /  21 Page

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    Hitachi,Ltd.
Part No. HM62W1400H
OCR Text 2.0 nov. 11, 1998 description the hm62w1400h is a 4-mbit high speed static ram organized 4-mword 1-bit. it has realized high speed access time by employing cmos process (4-transistor + 2-poly resistor memory cell)and high speed circuit ...
Description 4M High Speed SRAM (4-Mword ×1-bit)(4M高速静态RAM(4M×1)

File Size 235.31K  /  15 Page

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    Hitachi,Ltd.
Part No. HM621400H
OCR Text ...ng cmos process (4-transistor + 2-poly resistor memory cell)and high speed circuit designing technology. it is most appropriate for the application which requires high speed and high density memory, such as cache and buffer memory in syste...
Description 4M High Speed SRAM (4-Mword ×1-bit)(4M高速静态RAM(4M字)

File Size 112.39K  /  15 Page

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    Renesas Electronics Corporation.
Renesas Electronics, Corp.
Part No. R1RW0404DGE-2PR R1RW0404DGE-2LR REJ03C0115-0100Z
OCR Text ...n) ? data retention voltage: 2 v (min) (l-version) ? center v cc and v ss type pin out r1rw0404d series rev.1.00, mar.12.2004, page 2 of 11 ordering information type no. access time package r1rw0404dge-2pr 12 ns 400...
Description 4M HIGH SPEED SRAM (1-MWORD X 4-BIT) 4分高速SRAM - MWORD × 4位)

File Size 79.53K  /  13 Page

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    Renesas Electronics Corporation.
Renesas Electronics, Corp.
Part No. R1RP0404DGE-2PR R1RP0404DGE-2LR
OCR Text ...n) ? data retention voltage: 2.0 v (min) (l-version) ? center v cc and v ss type pin out r1rp0404d series rev.1.00, mar.12.2004, page 2 of 11 ordering information type no. access time package r1rp0404dge-2pr 12 ns 4...
Description 4M High Speed SRAM (1-Mword 4-bit) 4分高速SRAM - Mword4位)

File Size 80.12K  /  13 Page

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    HM5216405LTT-10H HM5216805LTT-10H HM5216805TT-10H HM5216405TT-10H HM5216405TT-12 HM5216805TT-12

Hitachi Semiconductor
Part No. HM5216405LTT-10H HM5216805LTT-10H HM5216805TT-10H HM5216405TT-10H HM5216405TT-12 HM5216805TT-12
OCR Text 2-bank/2-mword 4-bit 2-bank ade-203-304e (z) rev. 5.0 november 1, 1997 description all inputs and outputs are referred to the rising edge of the clock input. the hm5216805 series, hm5216405 series are offered in 2 banks for improved ...
Description 16 M LVTTL Interface SDRAM 100 MHz/83 MHz 1-Mword ′ 8-bit ′ 2-bank/2-mword ′ 4-bit ′ 2-bank

File Size 588.25K  /  60 Page

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    HM621400HC HM621400HCJP-10 HM621400HCLJP-10

Hitachi Semiconductor
Hitachi,Ltd.
Part No. HM621400HC HM621400HCJP-10 HM621400HCLJP-10
OCR Text ...standby current: 5 mA (max) : 1.2 mA (max) (L-version) * Data retension current: 0.8 mA (max) (L-version) * Data retension voltage: 2 V (min) (L-version) * Center VCC and VSS type pinout Preliminary: The specification of this device are ...
Description    4M High Speed SRAM (4-Mword x 1-bit)

File Size 61.93K  /  14 Page

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    HITACHI[Hitachi Semiconductor]
Part No. HM62W1400H
OCR Text 2.0 Nov. 11, 1998 Description The HM62W1400H is a 4-Mbit high speed static RAM organized 4-Mword x 1-bit. It has realized high speed access time by employing CMOS process (4-transistor + 2-poly resistor memory cell)and high speed circuit d...
Description 4M High Speed SRAM (4-Mword x1-bit)

File Size 74.12K  /  14 Page

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