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Mitsubishi Electric Corporation MITSUBISHI[Mitsubishi Electric Semiconductor]
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Part No. |
FM400TU-3A
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OCR Text |
...................................150v Insulated
Type 6-elements in a pack Thermistor inside UL Recognized Yellow Card No.E80276 File N...20ma, VDS = 10V VGS = VGSS, VDS = 0V ID = 200A VGS = 15V ID = 200A VGS = 15V ID = 200A terminal-chip... |
Description |
HIGH POWER SWITCHING USE INSULATED PACKAGE
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File Size |
105.21K /
5 Page |
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Sanyo
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Part No. |
2SC4188
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OCR Text |
...T Cob Cre VCE(sat) VBE(sat) VCB=150v, IE=0 VEB=4V, IC=0 VCE=10V, IC=10mA VCE=30V, IC=10mA VCB=30V, f=1MHz VCB=30V, f=1MHz IC=20ma, IB=2mA IC=20ma, IB=2mA 200 200 5 40* 150 1.8 1.3 0.6 1.0 Conditions Ratings min typ max 0.1 0.1 320* MHz pF p... |
Description |
NPN Epitaxial Planar Silicon Transistor Ultrahigh-Definition CRT Display Video Output Applications
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File Size |
90.42K /
4 Page |
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Fairchild Semiconductor Corporation
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Part No. |
2N6518
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OCR Text |
...llector cut-off current v cb = -150v, i e =0 -50 na i ebo emitter cut-off current v eb = -4v, i c =0 -50 na h fe * dc current gain ...20ma, i b = -2ma i c = -30ma, i b = -3ma i c = -50ma, i b = -5ma -0.30 -0.35 -0.50 -1 v v v v v be ... |
Description |
PNP Epitaxial Silicon Transistor
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File Size |
25.03K /
3 Page |
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Matsshita / Panasonic
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Part No. |
2SB1361
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OCR Text |
...E(sat) fT Cob Conditions VCB = -150v, IE = 0 VEB = -3V, IC = 0 VCE = -5V, IC = -20ma VCE = -5V, IC = -1A VCE = -5V, IC = -7A VCE = -5V, IC = -7A IC = -7A, IB = - 0.7A VCE = -5V, IC = - 0.5A, f = 1MHz VCB = -10V, IE = 0, f = 1MHz 15 270 20 6... |
Description |
Power Transistors
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File Size |
49.84K /
4 Page |
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Korea Electronics (KEC)
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Part No. |
KTA1703
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OCR Text |
...i b1 =-10ma, i b2 =20ma v cc =-150v - - 1 s storage time t stg - - 4 fall time t f - - 1
1999. 11. 16 2/2 kta1703 revision no : 4 c 0 collector current i (a) collector power dissipation 0 c 0 ambient temperature ta ( c) pc - ta ... |
Description |
General Purpose Transistor
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File Size |
73.46K /
2 Page |
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KEC(Korea Electronics)
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Part No. |
MPSA92 MPSA93
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OCR Text |
....0mA, IB=0 VCB=-300V, IE=0 VCB=-150v, IE=0 VEB=-3V, IC=0 IC=-1.0mA, VCE=-10V
V
ICBO IEBO
A A
DC Current Gain
* hFE
IC=-10m...20ma, IB=-2.0mA IC=-20ma, IB=-2.0mA VCE=-20V, IC=-10mA, f=100MHz VCB=-20V, IE=0, f=1MHz
*Pulse Te... |
Description |
EPITAXIAL PLANAR PNP TRANSISTOR (HIGH VOLTAGE, TELEPHONE )
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File Size |
71.49K /
2 Page |
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it Online |
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Price and Availability
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