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130m rl Datasheet PDF File

For 130m rl Found Datasheets File :: 78 Search Time::2.032ms
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					M/A-COM Technology Solutions, Inc.
Part No.	PH2729-130m
OCR Text	130m Radar Pulsed Power Transistor 130W, 2.7-2.9 GHz, 100s Pulse, 10% Duty Features * * * * * * * * * NPN silicon microwave power transis...rl Droop VSWR-T VSWR-S 1 ADVANCED: Data Sheets contain information regarding a product M/A-COM T...
Description	Radar Pulsed Power Transistor 130W, 2.7-2.9 GHz, 100μs Pulse, 10% Duty Radar Pulsed Power Transistor 130W, 2.7-2.9 GHz, 100楼矛s Pulse, 10% Duty
File Size	98.59K / 3 Page	View it Online	Download Datasheet

					ACE Technology Co., LTD.
Part No.	ACE2303 ACE2303BM
OCR Text	... * * * * -30V/-2.6A, RDS(ON)=130m@VGS=-10V -30V/-2.0A, RDS(ON)=180m@VGS=-4.5V Super high density cell design for extremely low RDS(ON) Ex...rl=15 ID-1.0A, VGEN=-10V RG=6 Min. -30 -1.0 Typ Max. Unit V nA uA A -3.0 100 -1 -10 0...
Description	P-Channel Enhancement Mode MOSFET
File Size	260.90K / 8 Page	View it Online	Download Datasheet

					Taiwan Semiconductor Company, Ltd
Part No.	TS2508A TS2508ACSrl
OCR Text	...a. VRIPPLE = IL x ESR = 0.33A x 130m = 43mV An aluminum electrolytic capacitor's ESR value is related to the capacitance and its voltage rating. In most case, higher voltage electrolytic capacitors have lower ESR values. Most of the time, c...
Description	3A / 330KHz PWM Buck Converter
File Size	238.43K / 8 Page	View it Online	Download Datasheet

					Taiwan Semiconductor Company, Ltd
Part No.	TS2508CSrl
OCR Text	...a. VRIPPLE = IL x ESR = 0.33A x 130m = 43mV An aluminum electrolytic capacitor's ESR value is related to the capacitance and its voltage rating. In most case, higher voltage electrolytic capacitors have lower ESR values. Most of the time, c...
Description	2A / 330KHz PWM Buck Converter
File Size	234.06K / 8 Page	View it Online	Download Datasheet

					Stanson Technology
Part No.	ST2301MSRG ST2301M
OCR Text	...3 FEATURE -20V/-2.8A, RDS(ON) = 130m-ohm (Typ.) @VGS = -4.5V -20V/-2.0A, RDS(ON) = 220m-ohm @VGS = -2.5V Super high density cell design for ...rl=6 ID=-1A VGEN=-4.5V RG=6 4.8 0.75 1.4 35 150 60 10 32 38 30 8 nC pF 20 45 55 50 nS td...
Description	P Channel Enhancement Mode MOSFET
File Size	210.95K / 7 Page	View it Online	Download Datasheet

					Sirectifier Global Corp.
Part No.	RTM2301CX RTM2301
OCR Text	...n), Vgs @ - 4.5V, Ids @ - 2.8A =130m RDS (on), Vgs @ - 2.5V, Ids @ - 2.0A =190m Features Advanced trench process technology High density...rl = 6, ID = - 1A, VGEN = - 4.5V, RG = 6 VDS = - 6V, ID = - 2.8A, VGS = - 4.5V Qg Qgs Qgd td(on) tr ...
Description	20V P-Channel Enhancement Mode MOSFET
File Size	179.29K / 4 Page	View it Online	Download Datasheet

					M/A-COM Technology Solutions, Inc.
Part No.	PHA3135-130m
OCR Text	130m Radar Pulsed Power Module 115, 130, 145W, 3.1-3.5 GHz, 100s Pulse, 10% Duty Features * * * * * . NPN silicon bipolar transistor Inp...rl Droop VSWR-T VSWR-S 1 ADVANCED: Data Sheets contain information regarding a product M/A-COM T...
Description	Radar Pulsed Power Module
File Size	61.80K / 3 Page	View it Online	Download Datasheet

					ALPHA & OMEGA Semiconductor List of Unclassifed Manufacturers Electronic Theatre Controls, Inc.
Part No.	AO4609 AO4609L ELECTRONICTHEATRECONTROLSINC.-AO4609L
OCR Text	...S(ON) RDS(ON) < 18m (VGS=10V) < 130m (VGS = 10V) < 28m (VGS=4.5V) < 180m (VGS = 4.5V) < 260m (VGS = 2.5V) D2 S2 G2 S1 G1 1 2 3 4 8 7 6 5 ...rl=1.8, RGEN=3 IF=8.5A, dI/dt=100A/s Body Diode Reverse Recovery Time Body Diode Reverse Recovery...
Description	Complementary Enhancement Mode Field Effect Transistor
File Size	690.50K / 12 Page	View it Online	Download Datasheet

					Sirectifier Global
Part No.	RTM2301
OCR Text	...n), Vgs @ - 4.5V, Ids @ - 2.8A =130m RDS (on), Vgs @ - 2.5V, Ids @ - 2.0A =190m Features Advanced trench process technology High density...rl = 6, ID = - 1A, VGEN = - 4.5V, RG = 6 VDS = - 6V, ID = - 2.8A, VGS = - 4.5V Qg Qgs Qgd td(on) tr ...
Description	20V N-Channel Enhancement Mode MOSFET
File Size	202.97K / 4 Page	View it Online	Download Datasheet

					CET
Part No.	CER6080
OCR Text	... = 4.5V. -60V, -3.3A, RDS(ON) = 130m @VGS = -10V. RDS(ON) = 180m @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High ...rl VOUT td(on) VOUT td(off) 90% 10% tf 10% INVERTED S VIN 50% 10% 50% ...
Description	Dual Enhancement Mode Field Effect Transistor
File Size	422.51K / 7 Page	View it Online	Download Datasheet

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