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Advanced Power Technolo...
ADPOW[Advanced Power Technology]
Microsemi, Corp.
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| Part No. |
APT10021JLL_04 APT10021JLL APT10021JLL04
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| OCR Text |
1000v 37A 0.210
POWER MOs 7
(R)
R
MOsFET
G
s D
s
Power MOs 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOsFETs. Both conduction and switching (R) losses are addressed with Power MOs ... |
| Description |
Power MOs 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOsFETs.
37 A, 1000 V, 0.21 ohm, N-CHANNEL, si, POWER, MOsFET IsOTOP-4
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| File Size |
151.08K /
5 Page |
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it Online |
Download Datasheet
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Advanced Power Technology, Ltd.
Microsemi, Corp.
ADPOW[Advanced Power Technology]
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| Part No. |
APT10026JLL_03 APT10026JLL APT10026JLL03
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| OCR Text |
1000v 30A 0.260
POWER MOs 7
(R)
R
MOsFET
G
s D
s
Power MOs 7 is a new generation of low loss, high voltage, N-Channel enhancement mode power MOsFETs. Both conduction and switching (R) losses are addressed with Power MOs ... |
| Description |
30 A, 1000 V, 0.26 ohm, N-CHANNEL, si, POWER, MOsFET IsOTOP-4
Power MOs 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOsFETs.
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| File Size |
107.27K /
5 Page |
View
it Online |
Download Datasheet |
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Microsemi Corporation
ADPOW[Advanced Power Technology]
Microsemi, Corp.
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| Part No. |
APT10026L2LL_03 APT10026L2LL APT10026L2LL03 APT10026L2LLG
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| OCR Text |
1000v 38A 0.260
POWER MOs 7
(R)
R
MOsFET
TO-264 Max
Power MOs 7 is a new generation of low loss, high voltage, N-Channel enha...s patented metal gate structure. * Lower Input Capacitance * Lower Miller Capacitance * Lower Gate C... |
| Description |
Power MOs 7 is a new generation of low loss, high voltage, N-Channel
Power MOs 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOsFETs.
38 A, 1000 V, 0.26 ohm, N-CHANNEL, si, POWER, MOsFET TO-264MAX, 3 PIN
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| File Size |
100.91K /
5 Page |
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it Online |
Download Datasheet |
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ADPOW[Advanced Power Technology]
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| Part No. |
APT10030L2VFR_04 APT10030L2VFR APT10030L2VFR04
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| OCR Text |
1000v 33A
0.300
POWER MOs V(R) FREDFET
Power MOs V(R) is a new generation of high voltage N-Channel enhancement mode power MOsFETs. Th...s
All Ratings: TC = 25C unless otherwise specified.
APT10030L2VFR UNIT Volts Amps
1000 33 132... |
| Description |
Power MOs V is a new generation of high voltage N-Channel enhancement mode power MOsFETs.
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| File Size |
129.11K /
4 Page |
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it Online |
Download Datasheet |
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ADPOW[Advanced Power Technology]
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| Part No. |
APT10030L2VR_04 APT10030L2VR APT10030L2VR04
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| OCR Text |
1000v 33A 0.300
POWER MOs V(R) MOsFET
Power MOs V(R) is a new generation of high voltage N-Channel enhancement mode power MOsFETs. This...s
All Ratings: TC = 25C unless otherwise specified.
APT10030L2VR UNIT Volts Amps
1000 33 132 ... |
| Description |
Power MOs V is a new generation of high voltage N-Channel enhancement mode power MOsFETs.
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| File Size |
128.30K /
4 Page |
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it Online |
Download Datasheet |
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Microsemi, Corp.
MICROSEMI[Microsemi Corporation]
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| Part No. |
APT15DQ100BCTG APT15DQ100BCT
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| OCR Text |
1000v 2x15A APT15DQ100BCT APT15DQ100BCTG*
*G Denotes RoHs Compliant, Pb Free Terminal Finish.
ULTRAFAsT sOFT RECOVERY RECTIFIER DIODE
P...s VR = 667V, TC = 125C IF = 15A, diF/dt = -200A/s VR = 667V, TC = 125C IF = 15A, diF/dt = -200A/s VR... |
| Description |
ULTRAFAsT sOFT RECOVERY RECTIFIER DIODE 15 A, 1000 V, sILICON, RECTIFIER DIODE, TO-247AD
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| File Size |
242.23K /
4 Page |
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it Online |
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