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				Advanced Power Technolo... ADPOW[Advanced Power Technology] Advanced Power Technology Ltd.
Part No.	APT5017 APT5017SVR
OCR Text	... TC = 25C Pulsed Drain Current 1 All Ratings: TC = 25C unless otherwise specified. APT5017SVR UNIT Volts Amps 500 30 120 30 40 370 2...600 230 200 30 80 12 14 55 11 5280 840 350 300 45 120 25 30 80 20 ns nC pF Gate-Source Charge...
Description	POWER MOS V 500V 30A 0.170 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
File Size	63.55K / 4 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology]
Part No.	APT5019HVR
OCR Text	... TC = 25C Pulsed Drain Current 1 All Ratings: TC = 25C unless otherwise specified. APT5019HVR UNIT Volts Amps 500 24 96 30 40 250 2....600 230 200 30 80 12 14 55 11 5280 840 350 300 45 120 25 30 80 20 ns nC pF Gate-Source Charge...
Description	POWER MOS V 500V 24A 0.190 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
File Size	59.96K / 4 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology]
Part No.	APT50GF120JRD
OCR Text	...urrent Total Power Dissipation 1 1 1200 20 75 50 150 100 460 -55 to 150 300 Watts C Amps Volts @ TC = 25C @ TC = 90C Operating an...600 150 7 8 15 7400 910 500 pF Gate-Emitter Charge Gate-Collector ("Miller") Charge Turn-on D...
Description	Fast IGBT & FRED 1200V 75A The Fast IGBT is a new generation of high voltage power IGBTs. The Fast IGBT⑩ is a new generation of high voltage power IGBTs.
File Size	51.80K / 4 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology] Advanced Power Technology, Ltd.
Part No.	APT50GF60B2RD APT50GF60LRD
OCR Text	...urrent Total Power Dissipation 1 1 600 20 80 50 160 100 300 -55 to 150 300 Watts C Amps Volts @ TC = 25C @ TC = 90C Operating and Storage Junction Temperature Range STATIC ELECTRICAL CHARACTERISTICS (IGBT) Symbol BVCES VGE(TH...
Description	Fast IGBT & FRED 600V 80A The Fast IGBT⑩ is a new generation of high voltage power IGBTs. The Fast IGBT is a new generation of high voltage power IGBTs. Thin Film RF/Microwave Capacitor; Capacitance:3.9pF; Capacitance Tolerance: /- 0.1 pF; Working Voltage, DC:50V; Package/Case:0603; Leaded Process Compatible:Yes; Operating Temp. Max:125 C; Operating Temp. Min:-55 C ⑩的快速IGBT是一种高压IGBT的新一代
File Size	112.47K / 7 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology]
Part No.	APT50GF60BR
OCR Text	...= 90C Pulsed Collector Current 1 @ TC = 25C RBSOA Clamped Inductive Load Current @ Rg = 11W TC = 125C Single Pulse Avalanche Energy T...600 4.5 5.5 2.1 2.2 6.5 2.7 2.8 0.5 5.0 6-2000 052-6207 Rev E Volts Collector-Emitter On Volt...
Description	Fast IGBT 600V 75A The Fast IGBT is a new generation of high voltage power IGBTs.
File Size	80.83K / 5 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology] Advanced Power Technology Ltd.
Part No.	APT50GF60HR
OCR Text	...= 90C Pulsed Collector Current 1 RBSOA Clamped Inductive Load Current @ Rg = 11W TC = 125C Single Pulse Avalanche Energy Total Power Dis...600 600 20 55 50 @ TC = 25C Volts 110 100 75 Amps mJ Watts C 180 -55 to 150 300 ...
Description	Fast IGBT 600V 55A The Fast IGBT is a new generation of high voltage power IGBTs.
File Size	25.29K / 2 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology]
Part No.	APT50M38JFLL
OCR Text	... TC = 25C Pulsed Drain Current 1 Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25C Line...600 (VGS = 0V, IS = -ID [Cont.]) Tj = 25C Tj = 25C Tj = 125C 2.2 9.0 16 33 Tj = 125C ...
Description	Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
File Size	53.39K / 2 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology]
Part No.	APT50M50JFLL APT5014 APT5014BFLL APT5014SFLL
OCR Text	... TC = 25C Pulsed Drain Current 1 Gate-Source Voltage Continuous Gate-Source Voltage Transient Total Power Dissipation @ TC = 25C Line...600 (VGS = 0V, IS = -ID [Cont.]) Tj = 25C Tj = 25C Tj = 125C 2.6 10 17 34 Tj = 125C T...
Description	Power MOS 7TM is a new generation of low loss, high voltage, N-Channel enhancement mode power MOSFETS.
File Size	58.44K / 2 Page	View it Online	Download Datasheet

				ADPOW[Advanced Power Technology]
Part No.	APT50M50JVFR
OCR Text	...700 5.6 -55 to 150 300 77 50 4 1 Continuous Drain Current @ TC = 25C Pulsed Drain Current Gate-Source Voltage Continuous Gate-Source ...600 2.2 9.0 16 33 THERMAL / PACKAGE CHARACTERISTICS Symbol RJC RJA VIsolation Torque Characteris...
Description	POWER MOS V 500V 77A 0.050 Ohm Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
File Size	73.13K / 4 Page	View it Online	Download Datasheet

				Advanced Power Technology, Ltd. ADPOW[Advanced Power Technology]
Part No.	APT50M50JVR
OCR Text	... TC = 25C Pulsed Drain Current 1 All Ratings: TC = 25C unless otherwise specified. APT50M50JVR UNIT Volts Amps 500 77 308 30 40 700 ...600 800 1000 1200 Qg, TOTAL GATE CHARGE (nC) FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE 0 ...
Description	Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. 电源MOS V是一个高电压N新一代通道增强型功率MOSFET POWER MOS V 500V 77A 0.050 Ohm
File Size	70.86K / 4 Page	View it Online	Download Datasheet

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