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1.2ghz Datasheet PDF File

For 1.2ghz Found Datasheets File :: 323 Search Time::1.797ms
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				Eudyna Devices Inc
Part No.	FHX13X FHX14X
OCR Text	12GHz (FHX13) High Associated Gain: 13.0dB (Typ.)@f=12GHz Lg 0.15m, Wg = 200m Gold Gate Metallization for High Reliability DESCRIPTION The FHX13X, FHX14X are Super High Electron Mobility Transistor TM (SuperHEMT ) intended for general ...
Description	GaAs FET & HEMT Chips
File Size	59.15K / 4 Page	View it Online	Download Datasheet

				Sanyo Semicon Device
Part No.	2SK1645
OCR Text	...=3V, ID=10mA VDS=3V, ID=10mA, f=12GHz VDS=3V, ID=10mA, f=12GHz VDS=3V, ID=10mA, f=12GHz Ratings min typ 60 max 100 Unit V mA V mS dB dB dB --5.0 30 --0.5 -1.5 40 2.5 5.5 7.0 -5.0 * : The 2SK1645 is classified by IDSS as fol...
Description	For C to X-band Local Oscillator and Amplifier
File Size	38.15K / 4 Page	View it Online	Download Datasheet

				Mitsubishi Electric Semiconductor
Part No.	MGF1451A
OCR Text	...=10.5dB , P1dB=13dBm (Typ.) @ f=12GHz APPLICATION S to Ku band power Amplifiers QUALITY GRADE IG Keep Safety first in your circuit designs! ABSOLUTE MAXIMUM RATINGS Symbol VGDO VGSO ID PT Tch Tstg Parameter Gate to drain voltage...
Description	Low Noise MES FET
File Size	178.69K / 4 Page	View it Online	Download Datasheet

				Mitsubishi Electric Sem... MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No.	MGF1601B1 MGF1601B
OCR Text	...ID=100mA 25 20 PO vs. Pin (f=12GHz) Gain:10dB 8 6 42 PO 5 0 -5 0 5 10 15 VDS=6V VDS=4V 20 25 5 0 -5 0 5 10 15 VDS=6V VDS=4V 20 25 INPUT POWER Pin(dBm) INPUT POWER Pin(dBm) Nov. 97 MITSUBISHI SEMICONDUCTOR GaAs...
Description	MICROWAVE POWER GaAs FET
File Size	176.78K / 4 Page	View it Online	Download Datasheet

				MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No.	MGF1801B1 MGF1801B
OCR Text	...ID=100mA 25 20 PO vs. Pin (f=12GHz) Gain:10dB 8 6 42 PO 5 0 -5 0 5 10 15 VDS=6V VDS=4V 20 25 5 0 -5 0 5 10 15 VDS=6V VDS=4V 20 25 INPUT POWER Pin(dBm) INPUT POWER Pin(dBm) June/2004 MITSUBISHI SEMICONDUCTOR GaAs FET...
Description	MICROWAVE POWER GaAs FET
File Size	176.03K / 4 Page	View it Online	Download Datasheet

				Mitsubishi Electric Semiconductor
Part No.	MGF4941AL
OCR Text	... FEATURES Low noise figure @ f=12GHz NFmin. = 0.35dB (Typ.) High associated gain @ f=12GHz Gs = 13.5dB (Typ.) Fig.1 APPLICATION L to K band low noise amplifiers QUALITY GRADE GG GD-32 RECOMMENDED BIAS CONDITIONS VDS=2V , ID=...
Description	SUPER LOW NOISE InGaAs HEMT
File Size	121.24K / 6 Page	View it Online	Download Datasheet

				MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No.	MGF4951A04 MGF4952A MGF4951A
OCR Text	... FEATURES Low noise figure @ f=12GHz MGF4951A : NFmin. = 0.40dB (Typ.) MGF4952A : NFmin. = 0.60dB (Typ.) High associated gain @ f=12GHz Gs = 12.0dB (Typ.) Fig.1 APPLICATION C to K band low noise amplifiers MITSUBISHI Proprietary ...
Description	SUPER LOW NOISE InGaAs HEMT
File Size	180.71K / 5 Page	View it Online	Download Datasheet

				Maxim Integrated Products
Part No.	MAX7384 MAX7384A MAX7384B MAX7384C
OCR Text	...vation of 16MHz for 20s using a 12GHz oscilloscope 10% to 90% 90% to 10% VCC rising, deviation from nominal threshold TA = +25C TA = -40C to +125C -2 -5 1 122 VCC 0.4 V VL = 2.7V, ISOURCE = 2.0mA Output Low Voltage VOL VL = 4.5V, ISINK = 20...
Description	Silicon Oscillator with Low-Power Frequency Switching and Reset Output
File Size	708.58K / 9 Page	View it Online	Download Datasheet

				List of Unclassifed Manufacturers ETC Excelics Semiconductor, Inc.
Part No.	EPA018A-70
OCR Text	...E AND 12.5dB ASSOCIATED GAIN AT 12GHz 0.3 X 180 MICRON RECESSED "MUSHROOM" GATE Si3N4 PASSIVATION ADVANCED EPITAXIAL HETEROJUNCTION PROFILE PROVIDES EXTRA HIGH POWER EFFICIENCY, AND HIGH RELIABILITY EPA018A-70 High Efficiency Heterojunc...
Description	High Efficiency Heterojunction Power FET
File Size	19.02K / 2 Page	View it Online	Download Datasheet

For 1.2ghz Found Datasheets File :: 323 Search Time::1.797ms
Page :: | 1 | 2 | 3 | 4 | 5 | <6> | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |