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  0.8-2.0 Datasheet PDF File

For 0.8-2.0 Found Datasheets File :: 491581    Search Time::27.312ms    
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    2SA2049

ROHM[Rohm]
Part No. 2SA2049
OCR Text ...ensions (Units : mm) MPT3 1.5 0.4 1.0 (1) 4.0 2.5 0.5 0.5 (3) 1.5 0.4 (1)Base (2)Collector (3)Emitter 0.4 Each...8 Grounded Emitter Propagation Characteristics Fig.9 Transition Frequency 100 COLLECTOR OUT...
Description MEDIUM POWER TRANSISTOR

File Size 42.56K  /  4 Page

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    2SA2056

TOSHIBA[Toshiba Semiconductor]
Part No. 2SA2056
OCR Text ...t gain: hFE = 200 to 500 (IC = -0.5 A) Low collector-emitter saturation voltage: VCE (sat) = -0.2 V (max) High-speed switching: tf = 90 ns (...8 10000 hFE - IC (A) Ta = 100C Collector current DC current gain -10 -6 -4 hFE ...
Description TOSHIBA Transistor Silicon PNP Epitaxial Type

File Size 189.75K  /  5 Page

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    2SA2057

PANASONIC[Panasonic Semiconductor]
Part No. 2SA2057
OCR Text ...0.2 Solder Dip 1.40.2 1.60.2 0.80.1 3.00.5 2.60.1 0.550.15 Absolute Maximum Ratings TC = 25C Parameter Collector-base volta...8 -1.2 IC VBE -10 VCE(sat) IC Collector-emitter saturation voltage VCE(sat) (V) IC / I B ...
Description Silicon PNP epitaxial planar type

File Size 72.39K  /  3 Page

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    2SA2058

TOSHIBA[Toshiba Semiconductor]
Part No. 2SA2058
OCR Text ...t gain: hFE = 200 to 500 (IC = -0.2 A) Low collector-emitter saturation voltage: VCE (sat) = -0.19 V (max) High-speed switching: tf = 25 ns ...8 -6 -4 IB = -2 mA DC current gain -55 100 -0.8 -0.4 10 -0.001 0 0 -0.2 -0.4 ...
Description TOSHIBA Transistor Silicon PNP Epitaxial Type

File Size 194.32K  /  5 Page

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    2SA2059

TOSHIBA[Toshiba Semiconductor]
Part No. 2SA2059
OCR Text ...t gain: hFE = 200 to 500 (IC = -0.5 A) Low collector-emitter saturation voltage: VCE (sat) = -0.19 V (max) High-speed switching: tf = 40 ns ...8 -1.2 -1.6 -2.0 -2.4 10 Collector-emitter voltage VCE (V) 1 -0.001 -0.01 -0.1 ...
Description SILICON PNP EPITAXIAL TYPE

File Size 181.01K  /  5 Page

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    2SA2061

TOSHIBA[Toshiba Semiconductor]
Part No. 2SA2061
OCR Text ...nt gain: hFE = 200 to 500 (IC = 0.5 A) Low collector-emitter saturation voltage: VCE (sat) = -0.19 V (max) High-speed switching: tf = 40 ns ...8 -1.2 -1.6 -2 10 -0.001 -0.003 -0.01 -0.03 -0.1 -0.3 -1 -3 Collector-emitte...
Description Silicon PNP Epitaxial Type

File Size 167.29K  /  5 Page

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    2SA2062 2SC5774

Sanyo Electric Co.,Ltd.
SANYO[Sanyo Semicon Device]
Part No. 2SA2062 2SC5774
OCR Text ... tf Conditions VCB=(--)160V, IE=0 VEB=(--)4V, IC=0 VCE=(--)5V, IC=(--)1A VCE=(--)5V, IC=(--)5A VCE=(--)5V, IC=(--)1A VCB=(--)10V, f=1MHz VCE...8 Switching Time Test Circuit PW=20s D.C.1% 2.0 IB1 OUTPUT IB2 VR 50 RB + 100F + 470F VCC=...
Description 140V / 10A, AF70W Output Applications

File Size 34.06K  /  4 Page

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    2SA2064

PANASONIC[Panasonic Semiconductor]
Part No. 2SA2064
OCR Text ...0.2 Solder Dip 1.40.2 1.60.2 0.80.1 3.00.5 2.60.1 0.550.15 Absolute Maximum Ratings TC = 25C Parameter Collector-base volta...8 -1.0 -1.2 - 0.001 - 0.1 -1 -10 Ambient temperature Ta (C) Base to emitter voltag...
Description Silicon PNP epitaxial planar type

File Size 70.35K  /  3 Page

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    2SA2067

PANASONIC[Panasonic Semiconductor]
Part No. 2SA2067
OCR Text ...10.00.2 1.00.2 5.00.1 C 1.0 2.250.2 0.650.1 0.650.1 0.350.1 1.050.1 0.550.1 2.50.2 2.50.2 123 0.550.1 Absolute Maximum Ratings ...8 V MHz s s s Min -60 -100 -100 -1 320 Typ Max Unit V A A mA Note) 1. Measuring methods are base...
Description Silicon PNP epitaxial planar type

File Size 66.39K  /  3 Page

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    2SA2069

TOSHIBA[Toshiba Semiconductor]
Part No. 2SA2069
OCR Text ...t gain: hFE = 200 to 500 (IC = -0.15 A) Low collector-emitter saturation voltage: VCE (sat) = -0.14 V (max) High-speed switching: tf = 37 ns...8 -0.8 -6 -4 -0.4 IB = -2 mA hFE - IC Ta = 100C (A) -1.2 hFE 100 25 Collector cur...
Description High-Speed Switching Applications DC-DC Converter Applications

File Size 194.91K  /  5 Page

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