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  0.2a Datasheet PDF File

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    2SC5063

PANASONIC[Panasonic Semiconductor]
Part No. 2SC5063
OCR Text ...C) Ratings 500 500 400 7 3 1.5 0.5 25 1.3 150 -55 to +150 Unit V 10.5min. 2.0 0.80.1 0.5max. 2.540.3 5.080.5 1 2 3 s Abso...2A, f = 10MHz IC = 0.8A, IB1 = 0.16A, IB2 = - 0.32A, VCC = 150V 25 0.7 2 0.3 400 15 8 1 1.5 V V MHz ...
Description Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching)

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    2SC5077 2SC5077A

Panasonic, Corp.
PANASONIC[Panasonic Semiconductor]
Part No. 2SC5077 2SC5077A
OCR Text ...IC IB Ta=25C PC Tj Tstg 13.7-0.2 +0.5 1.20.15 1.450.15 0.750.1 2.540.2 5.080.4 123 2.60.1 0.70.1 7 emitter voltage 2SC5077...2A (2W) and without heat sink (2) PT=10V x 1.0A (10W) and with a 100 x 100 x 2mm Al heat sink The...
Description Silicon NPN triple diffusion planar type(For high breakdown voltage high-speed switching) 7 A, 500 V, NPN, Si, POWER TRANSISTOR

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    2SD1051

http://
PANASONIC[Panasonic Semiconductor]
Part No. 2SD1051
OCR Text ... to 2SB819 6.90.1 1.5 2.50.1 1.0 1.0 2.40.2 2.00.2 3.50.1 Unit: mm s Features q q q 1.5 R0.9 R0.9 0.85 0.550.1 0.450.05...2A, IB = 1A*2 IC = 1.5A, IB = 0.15A*2 0.2a*2 VCB = 5V, IE = -0.5A*2, f = 200MHz VCB = 20V, IE = 0, f...
Description Silicon NPN epitaxial planer type(For low-frequency power amplification)

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    2SD1055 2SD1766 D1758 2SD1758 2SD1919 2SD1862 A5800364 2SD1227M 2SB1182 2SB1188 2SB1240 2SB1277 2SB822 2SB891F 2SB911M 2

ROHM[Rohm]
Rohm CO.,LTD.
Part No. 2SD1055 2SD1766 D1758 2SD1758 2SD1919 2SD1862 A5800364 2SD1227M 2SB1182 2SB1188 2SB1240 2SB1277 2SB822 2SB891F 2SB911M 2SD1919TL2/Q
OCR Text ...res 1) Low VCE(sat). VCE(sat) = 0.5V (Typ.) (IC / IB = 2A / 0.2a) 2) Complements the 2SB1188 / 2SB1182 / 2SB1240 / 2SB891F / 2SB822 / 2SB1277 / 2SB911M FStructure Epitaxial planar type NPN silicon transistor FExternal dimensions (Units: mm)...
Description    Medium Power Transistor (32V, 2A)
2000 mA, 32 V, NPN, Si, SMALL SIGNAL TRANSISTOR
Medium Power Transistor 32V/ 2A
Medium Power Transistor 32V, 2A
Medium Power Transistor 32V 2A
From old datasheet system

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    2SD1119

Fuji Electric
Panasonic Semiconductor
Part No. 2SD1119
OCR Text ...ng and the magazine packing. 0.4max. 45 1.0-0.2 +0.1 0.40.08 0.50.08 1.50.1 3.00.15 3 2 1 4.0-0.20 0.40.04 s Absolut...2A*2 IC = 3A, IB = 0.1A*2 VCB = 6V, IE = -50mA, f = 200MHz VCB = 20V, IE = 0, f = 1MHz min typ...
Description Silicon NPN epitaxial planer type(For low-frequency power amplification0

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    2SD2439

SANKEN[Sanken electric]
Part No. 2SD2439
OCR Text ...typ V V MHz pF 16.2 B (7 0 ) E Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SB1588) sAbsolute maximum ratings (Ta=25C) Symbol VCBO VCEO VEBO IC IB PC Tj Tstg 2SD2439 160 150 5 10 1 80(Tc=25C) 150 -55 to +...
Description Silicon NPN Triple Diffused Planar Transistor(Audio, Series Regulator and General Purpose)

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    2SD389

WS
WINGS[Wing Shing Computer Components]
Part No. 2SD389
OCR Text ...fT Test Condition VCB= 60V , IE=0 VEB= 7V , IC=0 VCE= 3V , IC=1A IC=2A , IB=0.2a VCE= 5V , IC=0.5A Min Typ Max 100 100 70 1.0 18 V MHZ Unit A A Wing Shing Computer Components Co., (H.K.)Ltd. Homepage: http://www.wingshing.com Tel:(85...
Description LOW FREQUENCY POWER AMPLIFIER(NPN)

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    2SD882S UTC2SD882S

Unisonic Technologies
Part No. 2SD882S UTC2SD882S
OCR Text ...c IB Tj TSTG RATING 40 30 5 0.5 3 7 0.6 150 -55 ~ +150 UNIT V V V W A A A C C ELECTRICAL CHARACTERISTICS (Ta=25C,unless otherwise...2A,IB=0.2a Ic=2A,IB=0.2a VCE=5V,Ic=0.1A VCB=10V,IE=0,f=1MHz MIN TYP MAX 1000 1000 UNIT ...
Description NPN EPITAXIAL SILICON TRANSISTOR

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    2SD965

Panasonic, Corp.
Panasonic Semiconductor
Part No. 2SD965
OCR Text ... (Ta=25C) Ratings 40 20 7 8 5 0.75 150 -55 ~ +150 Unit V V V A A W C C 2.540.15 123 0.45 -0.1 1.27 +0.2 13.50.5 Low collector to e...2A*2 IC = 3A, IB = 0.1A*2 VCB = 6V, IE = -50mA, f = 200MHz VCB = 20V, IE = 0, f = 1MHz min typ...
Description Silicon NPN epitaxial planer type(For low-frequency power amplification) 5000 mA, 20 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92

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    2SD966

PANASONIC[Panasonic Semiconductor]
Part No. 2SD966
OCR Text ...55 ~ +150 Unit V V V A A W C C 0.45-0.1 1.27 1.27 +0.2 Parameter Collector to base voltage Collector to emitter voltage Emitter to base...2A*2 IC = 3A, IB = 0.1A*2 VCB = 6V, IE = -50mA, f = 200MHz VCB = 20V, IE = 0, f = 1MHz min 3.2...
Description Silicon NPN epitaxial planer type(For low-frequency power amplification)

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