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IDT
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| Part No. |
IDT74LVC11
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| OCR Text |
... PRESET, 5 VOLT TOLERANT I/O
* 0.5 MICRON CMOS Technology * ESD > 2000V per MIL-STD-883, Method 3015; > 200V using machine model (C = 200pF...112A 74
Thin Shrink Small Outline Package Dual Negative-Edge-Triggered J-K Flip-Flop with Clear a... |
| Description |
3.3V CMOS DUAL NEGATIVE-EDGE-TRIGGERED J-K FLIP-FLOP WITH CLEAR AND PRESET, 5V TOLERANT I/O
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| File Size |
75.92K /
7 Page |
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it Online |
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MICROSEMI[Microsemi Corporation]
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| Part No. |
APT20M19JVR
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| OCR Text |
0.019
POWER MOS V (R)
Power MOS V(R) is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V(R) a... |
| Description |
POWER MOS V
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| File Size |
70.06K /
4 Page |
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it Online |
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SL Power Electronics
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| Part No. |
GSM11
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| OCR Text |
...35 a max. input current 120 vac 0.23 a 230 vac 0.16 a input fuse f1 1.0 a emc information conducted emissions en55011 level b radiated emiss...112a 18-30234-112b n/a pin 1=+vout pin 2 =return pin 1=+vout pin 2 =return pin 1=+vout pin 2 =return... |
| Description |
Low Power Medical Power Supplies 11 Watt AC/DC Universal Input Power Supply
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| File Size |
619.81K /
2 Page |
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it Online |
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Advanced Power Technology Ltd.
ADPOW[Advanced Power Technology]
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| Part No. |
APT20M19JVR
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| OCR Text |
0.019
POWER MOS V (R)
Power MOS V(R) is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V(R) al... |
| Description |
Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs.
POWER MOS V 200V 112A 0.019 Ohm
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| File Size |
73.82K /
4 Page |
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it Online |
Download Datasheet |
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