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  0.0066 Datasheet PDF File

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    Winbond Electronics
Part No. 15102SI I5104S
OCR Text ...se Date: October, 2003 Revision 0.2 ISD5100 - SERIES 1. GENERAL DESCRIPTION The ISD5100 ChipCorder Series provide high quality, fully integrated, single-chip Record/Playback solutions for 1- to 16-minute messaging applications that are...
Description SINGLE-CHIP 1 TO 16 MINUTES DURATION VOICE RECORD/PLAYBACK DEVICES WITH DIGITAL STORAGE CAPABILITY

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    1.5KE16CA 1.5KE62CA 1.5KE170CA 1.5KE56CA

Won-Top Electronics
Part No. 1.5KE16CA 1.5KE62CA 1.5KE170CA 1.5KE56CA
OCR Text ...Min Max A 25.4 -- B 7.20 9.50 C 0.94 1.07 D 4.80 5.30 All Dimensions in mm ! "C" Suffix Designates Bi-directional Devices "A" Suffix Designates 5% Tolerance Devices No Suffix Designates 10% Tolerance Devices Maximum Ratings and Ele...
Description HYB 39S16400CT-8

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    1.5KE16CA

Micro Commercial Components
Part No. 1.5KE16CA
OCR Text ...mum Ratings 2,3 001 +5 3 0 1 89:!0 // *+ ;< +=)+ ;0< + > 4 + 48 ,"00:0 $ +,47 4?+ 0 88@ 2, 4.0 . >+ 4 +,5(+> > +' 4' ( + 4. , , ,, ,' ++, A, $ +/ 4/ B 2 'A, 0' % ,+ 5 $)+ 5 '4/.' +,+ ...
Description 1500 Watt Transient Voltage Suppressors 6.8 to 400 Volts

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    Compensated Devices Incorporated
Part No. 1N4571A-1
OCR Text ...AMIC ZENER IMPEDANCE (Note 2) C 0 to + 75C -55 to + 100C 0 to + 75C -55 to + 100C 0 to + 75C -55 to + 100C 0 to + 75C -55 to + 100C 0 to + 75C -55 to + 100C 0 to + 75C -55 to + 100C 0 to + 75C -55 to + 100C 0 to + 75C -55 to + 100C 0 to + 7...
Description 6.4 VOLT NOMINAL ZENER VOLTAGE 5%

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    Microsemi
Part No. 1N4571A-1
OCR Text ...ature coefficients to as low as 0.0005%/oC for minimal voltage change with temperature. Four different operating currents are available for selection at 0.5 mA, 1.0 mA, 2.00 mA, and 4.00 mA. These glass axial-leaded DO-35 reference diodes a...
Description 0TC Reference Voltage Zener

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    Compensated Devices Incorporated
Part No. 1N4777A 1N4777 1N4778 1N4778A 1N4782A 1N4780A 1N4780
OCR Text 0.5 AND 1.0 mA * METALLURGICALLY BONDED * DOUBLE PLUG CONSTRUCTION 1N4775 thru 1N4784A MAXIMUM RATINGS Operating Temperature: -65C to +175C Storage Temperature: -65C to +175C DC Power Dissipation: 500mW @ +50C Power Derating: 4 mW / ...
Description 8.5 VOLT NOMINAL ZENER VOLTAGE + 5%

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    Microsemi
Part No. 1N4777A 1N4777 1N4778A 1N4778 1N4782A 1N4780 1N4780A
OCR Text 0.5 AND 1.0 mA * METALLURGICALLY BONDED * DOUBLE PLUG CONSTRUCTION 1N4775 thru 1N4784A MAXIMUM RATINGS Operating Temperature: -65C to +175C Storage Temperature: -65C to +175C DC Power Dissipation: 500mW @ +50C Power Derating: 4 mW / ...
Description Zener Voltage Regulator Diode

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    1N5257B 1N5225B 1N5242B 1N5241B 1N5244B 1N5231B 1N5232B 1N5253B 1N5229B 1N5239B 1N5245B 1N5265B 1N5226B 1N5248B 1N5228B

PHILIPS[Philips Semiconductors]
NXP Semiconductors N.V.
Rectron Semiconductor
Part No. 1N5257B 1N5225B 1N5242B 1N5241B 1N5244B 1N5231B 1N5232B 1N5253B 1N5229B 1N5239B 1N5245B 1N5265B 1N5226B 1N5248B 1N5228B 1N5256B 1N5267B 1N5243B 1N5234B 1N5251B 1N5247B 1N5255B
OCR Text ...* Working voltage range: nom. 3.0 to 75 V * Non-repetitive peak reverse power dissipation: max. 40 W. handbook, halfpage 1N5225B to 1N5267B DESCRIPTION Low-power voltage regulator diodes in hermetically sealed leaded glass SOD27 (DO-...
Description Voltage regulator diodes 6.2 V, 0.4 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-35
Voltage regulator diodes 33 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-35
Voltage regulator diodes 22 V, 0.4 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-35
Voltage regulator diodes 17 V, 0.5 W, SILICON, UNIDIRECTIONAL VOLTAGE REGULATOR DIODE, DO-35

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    PHILIPS[Philips Semiconductors]
Part No. 1PS79SB10
OCR Text ... ambient temperature tp 1 s; 0.5 tp < 10 ms CONDITIONS - - - - -65 - -65 MIN. MAX. 30 200 300 600 +150 125 +125 UNIT V mA mA mA C C C 1998 Jul 16 2 Philips Semiconductors Product specification Schottky barrier diode ELECT...
Description Schottky barrier diode

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    1PS79SB10 1PS79SB10_1

NXP Semiconductors
PHILIPS[Philips Semiconductors]
Part No. 1PS79SB10 1PS79SB10_1
OCR Text ... ambient temperature tp 1 s; 0.5 tp < 10 ms CONDITIONS - - - - -65 - -65 MIN. MAX. 30 200 300 600 +150 125 +125 UNIT V mA mA mA C C C 1998 Jul 16 2 Philips Semiconductors Product specification Schottky barrier diode ELECT...
Description Schottky barrier diode
From old datasheet system

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