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28F512 SP9501AN HCC4001B 74HC404 IIM7010A TA123 1SS40 MAX7415
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Part No. MT48H4M32LFB5-75ITK
OCR Text ...oncurrent auto precharge ? auto refresh and self refresh modes ? lvttl-compatible inputs and outputs ? on-chip temperature sensor to control self refresh rate ? partial-array self refresh (pasr) ? deep power-down (dpd) ? selectable output d...
Description 4M X 32 SYNCHRONOUS DRAM, 5.4 ns, PBGA90

File Size 2,412.95K  /  86 Page

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Part No. K4T51163QI-HIE70
OCR Text ............... .......... 16 13.1 refresh parameters by device density ................ ................. .............. .............. .............. ............ 16 13.2 speed bins and cl, trcd, trp, trc and tras for corresponding bin .....
Description 32M X 16 DDR DRAM, 0.4 ns, PBGA84

File Size 801.23K  /  42 Page

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    HIP4083 HIP4083AB HIP4083AP

INTERSIL[Intersil Corporation]
Part No. HIP4083 HIP4083AB HIP4083AP
OCR Text ...dic basis by initiating a short refresh pulse. In most bridge applications, this will happen automatically every time the lower FETs turn-on and the upper FETs turn-off. However, it is still possible to use the HIP4083 in applications that ...
Description 80V/ 300mA Three Phase High Side Driver
80V, 300mA Three Phase High Side Driver
30000 SYSTEM GATE 3.3 VOLT LOGIC CELL AR - NOT RECOMMENDED for NEW DESIGN

File Size 69.83K  /  10 Page

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    HIP4086 HIP4086AB HIP4086AP

INTERSIL[Intersil Corporation]
Part No. HIP4086 HIP4086AB HIP4086AP
OCR Text ...pplies * Programmable Bootstrap Refresh Time * Drives 1000pF Load with Typical Rise Time of 20ns and Fall Time of 10ns * DIS (Disable) Overrides Input Control * Input Logic Thresholds Compatible with 5V to 15V Logic Levels * Dead Time Disab...
Description 80V 0.5A Three Phase Driver
80V, 0.5A Three Phase Driver
80V/ 0.5A Three Phase Driver

File Size 74.89K  /  9 Page

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    K4E160411D K4E160412D K4E170411D K4E170412D K4E16704112D K4E160411D-B K4E160412D-B K4E160411D-F K4E160412D-F K4E170411D-

SAMSUNG[Samsung semiconductor]
Samsung Electronic
Part No. K4E160411D K4E160412D K4E170411D K4E170412D K4E16704112D K4E160411D-B K4E160412D-B K4E160411D-F K4E160412D-F K4E170411D-B K4E170411D-F K4E170412D-F K4E170412D-B
OCR Text ...upply voltage (+5.0V or +3.3V), refresh cycle (2K Ref. or 4K Ref.), access time (-50 or -60), power consumption(Normal or Low power) and package type(SOJ or TSOP-II) are optional features of this family. All of this family have CAS-before-R...
Description 4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 2K refresh cycle.
4M x 4Bit CMOS Dynamic RAM with Extended Data Out Data Sheet
4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 2K refresh cycle.
4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 5V, 4K refresh cycle.
4M x 4 bit CMOS dynamic RAM with extended data out. Supply voltage 3.3V, 4K refresh cycle.

File Size 254.50K  /  21 Page

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    K4F160411D K4F160412D K4F170411D K4F170412D K4F160411D-B K4F160411D-F K4F160412D-B K4F160412D-F

Samsung Electronic
SAMSUNG[Samsung semiconductor]
Part No. K4F160411D K4F160412D K4F170411D K4F170412D K4F160411D-B K4F160411D-F K4F160412D-B K4F160412D-F
OCR Text ...upply voltage (+5.0V or +3.3V), refresh cycle (2K Ref. or 4K Ref.), access time (-50 or -60), power consumption(Normal or Low power) and package type(SOJ or TSOP-II) are optional features of this family. All of this family have CASbefore-RA...
Description 4M x 4 bit CMOS dynamic RAM with fast page mode. Supply voltage 3.3V, 2K refresh cycle.
4M x 4 bit CMOS dynamic RAM with fast page mode. Supply voltage 5V, 2K refresh cycle.
4M x 4Bit CMOS Dynamic RAM with Fast Page Mode

File Size 223.25K  /  20 Page

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    HM514400B HM514400BL HM514400C HM514400CL HM514400CLS-6 HM514400CLS-7 HM514400CLS-8 HM514400BLTT-6 HM514400BLTT-7 HM5144

Hitachi Semiconductor
Part No. HM514400B HM514400BL HM514400C HM514400CL HM514400CLS-6 HM514400CLS-7 HM514400CLS-8 HM514400BLTT-6 HM514400BLTT-7 HM514400BLTT-8 HM514400CLTT-6 HM514400CLTT-7 HM514400CLTT-8
OCR Text ...ast page mode capability * 1024 refresh cycles : 16 ms 1024 refresh cycles : 128 ms (L-version) * 3 variations of refresh -- RAS-only refresh -- CAS-before-RAS refresh -- Hidden refresh HM514400B/BL, HM514400C/CL Series Ordering Informa...
Description 1,048,576-word x 4-bit dynamic random access memory, 80ns
1,048,576-word x 4-bit dynamic random access memory, 60ns
1/048/576-word X 4-bit Dynamic Random Access Memory
1,048,576-word x 4-bit dynamic random access memory, 70ns

File Size 231.12K  /  27 Page

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Part No. GM71V18160CJ-7 GM71V18160CT-6
OCR Text ...w (l-version : max) * ras only refresh, cas before ras refresh, hidden refresh capability * all inputs and outputs ttl compatible * 1024 refresh cycles/16ms * 1024 refresh cycles/128ms (l-version) * self refresh operation (l-version) * b...
Description x16 Fast Page Mode DRAM

File Size 105.99K  /  10 Page

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Part No. MT46H8M16LFCF-75
OCR Text ...arge option is supported ? auto refresh and self refresh modes ? 1.8v lvcmos-compatible inputs ? on-chip temperature sensor to control refresh rate ? partial array self refresh (pasr) ? selectable output drive (ds) ? clock stop capability ...
Description 8M X 16 DDR DRAM, 6 ns, PBGA60

File Size 2,731.42K  /  66 Page

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