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  -mosvi Datasheet PDF File

For -mosvi Found Datasheets File :: 103    Search Time::1.719ms    
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    2SK376706

Toshiba Semiconductor
Part No. 2SK376706
OCR Text MOSVI) 2SK3767 Switching Regulator Applications * * * * Low drain-source ON resistance: RDS (ON) = 3.3 (typ.) High forward transfer admittance: |Yfs| = 1.6S (typ.) Low leakage current: IDSS = 100A (VDS = 600 V) Enhancement mode: Vth = ...
Description Silicon N Channel MOS Type Switching Regulator Applications

File Size 212.20K  /  6 Page

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    2SK3947

Toshiba Semiconductor
Part No. 2SK3947
OCR Text MOSVI) 2SK3947 Switching Regulator Applications * * * * Low drain-source ON-resistance: RDS (ON) = 1.1 (typ.) High forward transfer admittance: |Yfs| = 5.0S (typ.) Low leakage current: IDSS = 100 A (VDS = 600 V) Enhancement mode: Vth ...
Description Silicon N-Channel MOS Type Switching Regulator Applications

File Size 177.26K  /  6 Page

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    2SK3757

Toshiba Semiconductor
Part No. 2SK3757
OCR Text MOSVI) 2SK3757 Switching Regulator Applications * * * * Low drain-source ON resistance: RDS (ON) = 1.9 (typ.) High forward transfer admittance: |Yfs| = 1.0 S (typ.) Low leakage current: IDSS = 100 A (max) (VDS = 450 V) Enhancement mod...
Description Silicon N-Channel MOS Type Switching Regulator Applications

File Size 245.37K  /  6 Page

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    2SK390309 2SK3903

Toshiba Semiconductor
Part No. 2SK390309 2SK3903
OCR Text MOSVI) 2SK3903 Switching Regulator Applications * * * * Low drain-source ON resistance: RDS (ON) = 0.32 (typ.) High forward transfer admittance: Yfs = 7.5 S (typ.) Low leakage current: IDSS = 100 A (max) (VDS = 600 V) Enhancement mode...
Description Switching Regulator Applications

File Size 228.88K  /  6 Page

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    2SK390708 2SK3907

Toshiba Semiconductor
Part No. 2SK390708 2SK3907
OCR Text MOSVI) 2SK3907 Switching Regulator Applications * * * * * Small gate charge: Qg = 60 nC (typ.) Low drain-source ON resistance: RDS (ON) = 0.18 (typ.) High forward transfer admittance: |Yfs| = 12 S (typ.) Low leakage current: IDSS = 50...
Description Switching Regulator Applications

File Size 187.59K  /  6 Page

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    2SK391109 2SK3911

Toshiba Semiconductor
Part No. 2SK391109 2SK3911
OCR Text MOSVI) 2SK3911 Switching Regulator Applications * * * * * Small gate charge: Qg = 60 nC (typ.) Low drain-source ON resistance: RDS (ON) = 0.22 (typ.) High forward transfer admittance: |Yfs| = 11 S (typ.) Low leakage current: IDSS = 50...
Description Switching Regulator Applications

File Size 182.35K  /  6 Page

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    2SK393409 2SK3934

Toshiba Semiconductor
Part No. 2SK393409 2SK3934
OCR Text MOSVI) 2SK3934 Switching Regulator Applications * * * * Low drain-source ON resistance: RDS (ON) = 0.23 (typ.) High forward transfer admittance: |Yfs| = 8.2 S (typ.) Low leakage current: IDSS = 100 A (VDS = 500 V) Enhancement model: V...
Description Switching Regulator Applications

File Size 274.64K  /  6 Page

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    2SK393509 2SK3935

Toshiba Semiconductor
Part No. 2SK393509 2SK3935
OCR Text MOSVI) 2SK3935 Switching Regulator Applications Low drain-source ON resistance: High forward transfer admittance: Low leakage current: RDS (ON) = 0.18 (typ.) |Yfs| = 10 S (typ.) Unit: mm IDSS = 100 A (max) (VDS = 450 V) Enhancem...
Description Switching Regulator Applications

File Size 279.56K  /  6 Page

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    2SK401209

Toshiba Semiconductor
Part No. 2SK401209
OCR Text MOSVI) 2SK4012 Switching Regulator Applications Low drain-source ON-resistance High forward transfer admittance Low leakage current Enhancement mode : RDS (ON) = 0.33 (typ.) : |Yfs| = 8.5 S (typ.) Unit: mm : IDSS = 100 A (max) (VDS...
Description Switching Regulator Applications

File Size 189.00K  /  6 Page

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    2SK356210 2SK3562

Toshiba Semiconductor
Part No. 2SK356210 2SK3562
OCR Text MOSVI) 2SK3562 Switching Regulator Applications * * * * Low drain-source ON-resistance: RDS (ON) = 0.9 (typ.) High forward transfer admittance: |Yfs| = 5.0 S (typ.) Low leakage current: IDSS = 100 A (max) (VDS = 600 V) Enhancement mod...
Description Switching Regulator Applications

File Size 202.53K  /  6 Page

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For -mosvi Found Datasheets File :: 103    Search Time::1.719ms    
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