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  lm358 u003d lm358 Datasheet PDF File

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    International Rectifier, Corp.
Part No. IRF7451
Description Power MOSFET(Vdss=150V, Rds(on)max=0.09ohm, Id=3.6A) 功率MOSFET(减振钢板基本\u003d 150伏时,RDS(on)的最大值\u003d 0.09ohm,身份证\u003d 3.6A

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    International Rectifier, Corp.
Part No. IRFY130CM
Description POWER MOSFET N-CHANNEL(BVdss=100V, Rds(on)=0.18ohm, Id=14.4A) 功率MOSFET N沟道(BVdss \u003d 100V的,的Rds(on)\u003d 0.18ohm,身份证\u003d 14.4A

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    International Rectifier, Corp.
Part No. IRFY440CM
Description POWER MOSFET N-CHANNEL(BVdss=500V, Rds(on)=0.85ohm, Id=7.0A) 功率MOSFET N沟道(BVdss \u003d 500V及的Rds(on)\u003d 0.85ohm,身份证\u003d 7.0A

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    International Rectifier, Corp.
IRF[International Rectifier]
Part No. IRHN8230 IRHN7230
Description TRANSISTOR N-CHANNEL(BVdss=200V, Rds(on)=0.40ohm, Id=9.0A) 晶体管N沟道(BVdss \u003d 200V的电压,的Rds(on)\u003d 0.40ohm,身份证\u003d 9.0,9.0

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    International Rectifier, Corp.
Part No. IRF3710SPBF
Description LA-MachXO Automotive Non-Volatile PLD For Low-Density Applications; LUTs: 640; Supply Voltage: 1.2V; I/Os: 113; Grade: -3; Package: Lead-Free TQFP; Pins: 144; Temp.: AUTO ㈢的HEXFET功率MOSFET(减振钢板基本\u003d 100V的,的RDS(on)\u003d 2300ヘ,身份证\u003d 57A条)

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    IRG4PC50U IRG4PC50U-E

IRF[International Rectifier]
International Rectifier, Corp.
Part No. IRG4PC50U IRG4PC50U-E
Description 55 A, 600 V, N-CHANNEL IGBT, TO-247AD
55 A, 600 V, N-CHANNEL IGBT, TO-247AC
600V UltraFast 8-60 kHz Discrete IGBT in a TO-247AC package
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.65V, @Vge=15V, Ic=27A) 绝缘栅双极晶体管(VCES和\u003d 600V电压的Vce(on)典\u003d 1.65V的,@和VGE \u003d 15V的,集成电路\u003d 27A条)

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    International Rectifier, Corp.
Part No. IRFR3709ZPBF
Description LA-MachXO Automotive Non-Volatile PLD For Low-Density Applications; LUTs: 640; Supply Voltage: 1.2V; I/Os: 159; Grade: -3; Package: Lead-Free ftBGA; Pins: 256; Temp.: AUTO HEXFET功率MOSFET(减振钢板基本\u003d 30V的,的RDS(on)最大值\u003d 650万ヘ,Qg和\u003d 17nC

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    IRG4BC29F IRG4BC30F IRG4BC30

IRF[International Rectifier]
International Rectifier, Corp.
Part No. IRG4BC29F IRG4BC30F IRG4BC30
Description 600V Fast 1-8 kHz Discrete IGBT in a TO-220AB package
INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE
INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.=1.59V, @Vge=15V, Ic=17A) 绝缘栅双极晶体管(VCES和\u003d 600V电压的Vce(on)典\u003d 1.59V,@和VGE \u003d 15V的,集成电路\u003d 17A条)

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    IRFP31N50L

International Rectifier, Corp.
Part No. IRFP31N50L
Description Power MOSFET(Vdss=500V, Rds(on)typ.=0.15ohm, Id=31A) 功率MOSFET(减振钢板基本\u003d 500V及的Rdson)典\u003d 0.15ohm,身份证\u003d 31A条)
HEXFET? Power MOSFET

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    IRFZ44EL IRFZ44ES

International Rectifier, Corp.
IRF[International Rectifier]
Part No. IRFZ44EL IRFZ44ES
Description MOV 250V RMS 17MM HIGH ENERGY 功率MOSFET(减振钢板基本\u003d 60V的,的Rds(on)\u003d 0.023ohm,身份证\u003d 48A条)
(IRFZ44ES / IRFZ44L) Power MOSFET
Power MOSFET(Vdss=60V, Rds(on)=0.023ohm, Id=48A)

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