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Infineon Technologies
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Part No. |
IPW60R165CP
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OCR Text |
xq g ? ultra low gate charge ? extreme dv/dt rated ? high peak current capability ? qualified according to jedec 1) for target applications...e as i d =7.9 a, v dd =50 v 522 mj avalanche energy, repetitive t ar 2),3) e ar i d =7.9 a, v dd ... |
Description |
CoolMOS Power Transistor
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File Size |
388.28K /
10 Page |
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it Online |
Download Datasheet
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INFINEON TECHNOLOGIES AG
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Part No. |
IPA60R165CP
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OCR Text |
xq g ? ultra low gate charge ? extreme dv/dt rated ? high peak current capability ? qualified according to jedec 1) for target applications...e as i d =7.9 a, v dd =50 v 522 mj avalanche energy, repetitive t ar 3),4) e ar i d =7.9 a, v dd ... |
Description |
21 A, 650 V, 0.165 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB
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File Size |
293.72K /
10 Page |
View
it Online |
Download Datasheet
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TY Semiconductor Co., Ltd
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Part No. |
2SD0602A
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OCR Text |
...cation of h fe ( 1 ) rank xq x r x s range 85 C 170 120 C 240 170 C 340 marking wq1 wr1 ws1 so t C 23 1. base 2. emitter 3. collector ... |
Description |
SOT-23 Plastic-Encapsulate Transistors
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File Size |
4,761.09K /
1 Page |
View
it Online |
Download Datasheet
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Price and Availability
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