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For w ch Found Datasheets File :: 21902 Search Time::2.25ms
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				FUJI[Fuji Electric]
Part No.	2SJ475-01
OCR Text	... 150 -55 ~ +150 Unit V A A V mJ w C C > Equivalent Circuit - Electrical characteristics (TC=25C), unless otherwise specified Item Dra...ch-a) R th(ch-c) Test conditions channel to air channel to case Min. Typ. Max. 75 2,50 ...
Description	FAP-III Series
File Size	296.96K / 2 Page	View it Online	Download Datasheet

				HITACHI[Hitachi Semiconductor]
Part No.	2SJ479 2SJ479L 2SJ479S
OCR Text	...0 -55 to +150 Unit V V A A A w C C 2 2SJ479(L), 2SJ479(S) Electrical characteristics (Ta = 25C) Item Drain to source breakdown vo...ch - c(t) = s (t) * ch - c ch - c = 2.5 C/w, Tc = 25 C PDM Pw T 0.03 0.02 1 lse 0.0 t pu h...
Description	Power switching MOSFET Silicon P channel DV-L MOS FET High Speed Power Switching Silicon P channel DVL MOS FET High Speed Power Switching
File Size	37.54K / 7 Page	View it Online	Download Datasheet

				NEC[NEC]
Part No.	2SJ492 2SJ492-S 2SJ492-ZJ D11264EJ1V0DS00
OCR Text	... Tstg -60 # 20 V V V A A w w C C A mJ -20, 0 # 20 # 80 Total Power Dissipation (TA = 25C) Total Power Dissipation (TC = 25C) C...ch-C) Rth(ch-A) 1.79 83.3 C/w C/w The information in this document is subject to change without n...
Description	From old datasheet system SwITchING P-chANNEL POwER MOS FET INDUSTRIAL USE
File Size	70.31K / 8 Page	View it Online	Download Datasheet

				NEC[NEC]
Part No.	2SJ493 D11265EJ3V0DS00
OCR Text	... Tstg -60 # 20 V V V A A w w C C A mJ -20, 0 # 16 # 64 Total Power Dissipation (TC = 25C) Total Power Dissipation (TA = 25C) C...ch-C) Rth(ch-A) 4.17 62.5 C/w C/w The information in this document is subject to change without n...
Description	From old datasheet system SwITchING P-chANNEL POwER MOS FET INDUSTRIAL USE
File Size	64.87K / 8 Page	View it Online	Download Datasheet

				NEC[NEC]
Part No.	2SJ494 D11266EJ2V0DS00
OCR Text	...5 2.0 150 -55 to +150 V V V A A w w C C 1.30.2 1.50.2 2.54 2.50.1 0.650.1 1. Gate 2. Drain 3. Source 123 ISOLATED TO-220 (MP-45F...ch-C) Rth (ch-A) 3.57 C/w 62.5 C/w Gate Protection Diode Source The diode connected between th...
Description	From old datasheet system SwITchING P-chANNEL POwER MOS FET INDUSTRIAL USE
File Size	68.73K / 8 Page	View it Online	Download Datasheet

				NEC[NEC]
Part No.	2SJ495 2SJ295 D11267EJ2V0DS00
OCR Text	...5 2.0 150 -55 to +150 V V V A A w w C C 123 0.7 0.1 2.54 13.5 MIN. 2.5 0.1 0.65 0.1 1. Gate 2. Drain 3. Source Drain Body Diode Sour...ch-c) Rth(ch-A) 3.57 62.5 C/w C/w MP-45F (ISOLATED TO-220) Gate Gate Protection Diode Th...
Description	From old datasheet system MOS Field Effect Power Transistors SwITchING P-chANNEL POwER MOS FET INDUSTRIAL USE
File Size	72.23K / 8 Page	View it Online	Download Datasheet

				HITACHI[Hitachi Semiconductor]
Part No.	2SJ496
OCR Text	... to +150 Unit V V A A A A mJ w C C EAR* Pch* Tch Tstg 2 2SJ496 Electrical characteristics (Ta = 25C) Item Drain to source b...ch - a(t) = s (t) * ch - a ch - a = 139 C/w, Ta = 25 C PDM Pw T D= Pw T 0.003 1sh ...
Description	Silicon P-channel MOS FET High Speed Power Switching
File Size	49.68K / 10 Page	View it Online	Download Datasheet

				HITACHI[Hitachi Semiconductor]
Part No.	2SJ504
OCR Text	... to +150 Unit V V A A A A mJ w C C EAR* Pch* Tch Tstg Notes: 1. Pw 10s, duty cycle 1 % 2. Value at Tc = 25C 3. Value at Ta = 2...ch - c(t) = s (t) * ch - c ch - c = 4.17C/w, Tc = 25C PDM Pw T D= 0.03 Pw T 0.01 10 ...
Description	Silicon P channel MOS FET High Speed Power Switching
File Size	50.21K / 10 Page	View it Online	Download Datasheet

				Hitachi,Ltd. HITACHI[Hitachi Semiconductor]
Part No.	2SJ505 2SJ505L 2SJ505S
OCR Text	... to +150 Unit V V A A A A mJ w C C EAR* Pch* Tch Tstg Notes: 1. Pw 10s, duty cycle 1 % 2. Value at Tc = 25C 3. Value at Ta = 2...ch - c(t) = s (t) * ch - c ch - c = 1.67 C/w, Tc = 25 C PDM Pw T 0.03 0.02 1 lse 0.0 t pu ...
Description	Silicon P channel MOS FET High Speed Power Switching Silicon P channel MOS FET High Speed Power Switching 硅P通道MOS FET的高速电源开 Power switching MOSFET
File Size	53.43K / 10 Page	View it Online	Download Datasheet

				Renesas Electronics, Corp. HITACHI[Hitachi Semiconductor]
Part No.	2SJ506 2SJ506L 2SJ506S
OCR Text	...0 -55 to +150 Unit V V A A A w C C 2 2SJ506(L), 2SJ506(S) Electrical characteristics (Ta = 25C) Item Drain to source breakdown vo...ch - c(t) = s (t) * ch - c ch - c = 6.25 C/w, Tc = 25 C Pu lse PDM Pw T 0.03 1s t ho ...
Description	Silicon P channel MOS FET High Speed Power Switching Silicon P channel MOS FET High Speed Power Switching 硅P通道MOS FET的高速电源开 Power switching MOSFET
File Size	49.71K / 10 Page	View it Online	Download Datasheet

For w ch Found Datasheets File :: 21902 Search Time::2.25ms
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