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FREESCALE[Freescale Semiconductor, Inc]
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| Part No. |
MRF6S9125NR1 MRF6S9125 MRF6S9125MBR1 MRF6S9125MR1 MRF6S9125NBR1
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| OCR Text |
...B Drain Efficiency -- 40% (Typ) spectral Regrowth @ 400 kHz Offset = - 63 dBc spectral Regrowth @ 600 kHz Offset = - 78 dBc EVM -- 1.5% rms GSM Application * Typical GSM Performance: VDD = 28 Volts, IDQ = 700 mA, Pout = 125 Watts, Full Freq... |
| Description |
RF Power Field Effect Transistors
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| File Size |
480.38K /
16 Page |
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it Online |
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FREESCALE[Freescale Semiconductor, Inc]
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| Part No. |
MRF6S9125NR1_06 MRF6S9125NBR1 MRF6S9125NR1
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| OCR Text |
...- 20 dB Drain Efficiency -- 40% spectral Regrowth @ 400 kHz Offset = - 63 dBc spectral Regrowth @ 600 kHz Offset = - 78 dBc EVM -- 1.8% rms GSM Application * Typical GSM Performance: VDD = 28 Volts, IDQ = 700 mA, Pout = 125 Watts, Full Freq... |
| Description |
RF Power Field Effect Transistors
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| File Size |
848.94K /
20 Page |
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FAIRCHILD[Fairchild Semiconductor]
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| Part No. |
MRF6S9060NR1 MRF6S9060NBR1
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| OCR Text |
...- 20 dB Drain Efficiency -- 46% spectral Regrowth @ 400 kHz Offset = - 62 dBc spectral Regrowth @ 600 kHz Offset = - 78 dBc EVM -- 1.5% rms GSM Application * Typical GSM Performance: VDD = 28 Volts, IDQ = 500 mA, Pout = 60 Watts, Full Frequ... |
| Description |
RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
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| File Size |
621.21K /
16 Page |
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Freescale Semiconductor...
FREESCALE[Freescale Semiconductor, Inc]
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| Part No. |
MRF6S9045NR1 MRF6S9045N MRF6S9045NBR1
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| OCR Text |
...- 20 dB Drain Efficiency -- 46% spectral Regrowth @ 400 kHz Offset = - 62 dBc spectral Regrowth @ 600 kHz Offset = - 78 dBc EVM -- 1.5% rms GSM Application * Typical GSM Performance: VDD = 28 Volts, IDQ = 350 mA, Pout = 45 Watts, Full Frequ... |
| Description |
RF Power Field Effect Transistors
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| File Size |
623.99K /
16 Page |
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it Online |
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FREESCALE[Freescale Semiconductor, Inc]
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| Part No. |
MRF6S18060MBR1 MRD6S18060MR1
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| OCR Text |
...1990 MHz) Power Gain -- 15.5 dB spectral Regrowth @ 400 kHz Offset = - 62 dBc spectral Regrowth @ 600 kHz Offset = - 76 dBc EVM -- 2% rms * Capable of Handling 5:1 VSWR, @ 26 Vdc, 1990 MHz, 60 Watts CW Output Power * Characterized with Seri... |
| Description |
RF Power Field Effect Transistors N-Channel Enhancement-Mode Lateral MOSFETs
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| File Size |
676.45K /
20 Page |
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it Online |
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FREESCALE[Freescale Semiconductor, Inc]
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| Part No. |
MRF5S9101NR1 MRF5S9101MBR1 MRF5S9101MR1 MRF5S9101NBR1
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| OCR Text |
... - 960 MHz) Power Gain -- 18 dB spectral Regrowth @ 400 kHz Offset = - 63 dBc spectral Regrowth @ 600 kHz Offset = - 78 dBc EVM -- 2.3% rms * Capable of Handling 10:1 VSWR, @ 26 Vdc, 960 MHz, 100 W CW Output Power Features * Characterized w... |
| Description |
RF Power Field Effect Transistors
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| File Size |
533.41K /
20 Page |
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it Online |
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Freescale (Motorola)
MOTOROLA[Motorola, Inc]
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| Part No. |
MRF5S9070NR1
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| OCR Text |
...ficiency Error Vector Magnitude spectral Regrowth at 400 kHz Offset spectral Regrowth at 600 kHz Offset Gps D EVM SR1 SR2 -- -- -- -- -- 17 44 1.5 - 62 - 78 -- -- -- -- -- dB % % dBc dBc (continued)
MRF5S9070NR1 MRF5S9070MR1 2 RF Device ... |
| Description |
880 MHz, 70 W, 26 V Lateral N–Channel Broadband RF Power MOSFET
RF Power Field Effect Transistors
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| File Size |
444.63K /
12 Page |
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it Online |
Download Datasheet |
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Price and Availability
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