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  silicon-bridge Datasheet PDF File

For silicon-bridge Found Datasheets File :: 4151    Search Time::1.187ms    
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    UPA803 UPA803T UPA803T-T1

NEC[NEC]
Part No. UPA803 UPA803T UPA803T-T1
OCR Text SILICON TRANSISTOR PA803T NPN SILICON EPITAXIAL TRANSISTOR (WITH BUILT-IN 2 ELEMENTS) MINI MOLD PA803T has built-in 2 transistors w...bridge, emitter and case should be connected to guard pin of bridge. hFE CLASSIFICATION Rank Mar...
Description NPN SILICON EPITAXIAL TRANSISTOR WITH BUILT-IN 2 ELEMENTS MINI MOLD

File Size 56.84K  /  8 Page

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    2SC3809

NEC[NEC]
Part No. 2SC3809
OCR Text SILICON TRANSISTOR 2SC3809 NPN SILICON EPITAXIAL TRANSISTOR FOR MICROWAVE AMPLIFIERS AND ULTRA HIGH SPEED SWITCHINGS INDUSTRIAL USE F...bridge, terminals other than the collector and base of the device under test should be connected to ...
Description NPN SILICON EPITAXIAL TRANSISTOR FOR MICROWAVE AMPLIFIERS AND ULTRA HIGH SPEED SWITCHINGS INDUSTRIAL USE

File Size 33.51K  /  4 Page

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    2SC3810

NEC[NEC]
Part No. 2SC3810
OCR Text SILICON TRANSISTOR 2SC3810 NPN SILICON EPITAXIAL TRANSISTOR FOR MICROWAVE AMPLIFIERS AND ULTRA HIGH SPEED SWITCHINGS INDUSTRIAL USE F...bridge, terminals other than the collector and base of the device under test should be connected to ...
Description NPN SILICON EPITAXIAL TRANSISTOR FOR MICROWAVE AMPLIFIERS AND ULTRA HIGH SPEED SWITCHINGS INDUSTRIAL USE

File Size 33.27K  /  4 Page

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    BGX50A Q62702-G38

SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
Part No. BGX50A Q62702-G38
OCR Text Silicon Switching Diode Array q q BGX 50 A Bridge configuration High-speed switch diode chip Type BGX 50 A Marking U1s Ordering Code (tape and reel) Q62702-G38 Pin Configuration Package1) SOT-143 Maximum Ratings per...
Description Silicon Switching Diode Array (Bridge configuration High-speed switch diode chip)
From old datasheet system

File Size 101.43K  /  4 Page

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    KPY32-RK Q62705-K266

SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
Part No. KPY32-RK Q62705-K266
OCR Text Silicon Piezoresistive Relative Pressure Sensor KPY 32-RK Features * * * * Low pressure and temperature hysteresis Fast response High ...Bridge resistance Sensitivity Output voltage Offset voltage P = P0 Linearity error (Best fit straigh...
Description Triac; Thyristor Type:Standard; Peak Repetitive Off-State Voltage, Vdrm:1000V; On-State RMS Current, IT(rms):6A; Gate Trigger Current (QI), Igt:25mA; Current, It av:6A; Gate Trigger Current Max, Igt:25mA RoHS Compliant: Yes
Silicon Piezoresistive Relative Pressure Sensor

File Size 151.75K  /  3 Page

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    KPY32-R Q62705-K150

SIEMENS AG
SIEMENS[Siemens Semiconductor Group]
Infineon
Part No. KPY32-R Q62705-K150
OCR Text Silicon Piezoresistive Relative Pressure Sensor KPY 32-R Features * * * * Low pressure and temperature hysteresis Fast response High s...Bridge resistance Sensitivity Output voltage Offset voltage P = P0 Linearity error (Best fit straigh...
Description Triac; Thyristor Type:Snubberless; Peak Repetitive Off-State Voltage, Vdrm:1000V; On-State RMS Current, IT(rms):6A; Gate Trigger Current (QI), Igt:50mA; Current, It av:6A; Gate Trigger Current Max, Igt:50mA RoHS Compliant: Yes
Advanced PFC/PWM Combination Controllers 20-PDIP -40 to 105
Silicon Piezoresistive Relative Pressure Sensor
Silicon Piezoresistive Relative Press...

File Size 92.76K  /  3 Page

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    MJW16110 MJ16110 ON1988

Motorola Mobility Holdings, Inc.
http://
MOTOROLA[Motorola, Inc]
ONSEMI[ON Semiconductor]
Part No. MJW16110 MJ16110 ON1988
OCR Text ...otorola Preferred Device NPN Silicon Power Transistors SWITCHMODE Bridge Series * * * * * * . . . specifically designed for use in half bridge and full bridge off line converters. Excellent Dynamic Saturation Characteristics Rugged RBS...
Description POWER TRANSISTORS 15 AMPERES 400 VOLTS 175 AND 135 WATTS 15 A, 400 V, NPN, Si, POWER TRANSISTOR, TO-247AE
From old datasheet system
NPN Silicon Power Transistors

File Size 414.19K  /  10 Page

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    MJW18020 JW18020 MJW18020-D

ONSEMI[ON Semiconductor]
Part No. MJW18020 JW18020 MJW18020-D
OCR Text Silicon Power Transistors High Voltage Planar The MJW18020 planar High Voltage Power Transistor is specifically Designed for motor control ...bridge configurations. http://onsemi.com * * * * Mains features include: High and Excellent G...
Description NPN Silicon Power Transistors High Voltage Planar 30A 1000 Volts BVces 450 Volts BVceo 250 Watts

File Size 55.68K  /  8 Page

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    WL08 WL10 WL01 WL005 WL04 WL06 WL02

EIC discrete Semiconduc...
EIC[EIC discrete Semiconductors]
Electronics Industry Public Company Limited
Part No. WL08 WL10 WL01 WL005 WL04 WL06 WL02
OCR Text SILICON BRIDGE RECTIFIERS WOB 0.39 (10.0) 0.31 (7.87) 0.22 (5.59) 0.18 (4.57) FEATURES : * * * * * * High case dielectric strength High surge current capability High reliability Low reverse current Low forward voltage drop Ideal for pr...
Description SILICON BRIDGE RECTIFIERS
TAPE, PLASTIC, WHITE, LETRA TAG; Colour:Pearl White; Colour, background:Pearl White; Length, tape:4m; Width, tape:12mm; Material:Plastic RoHS Compliant: NA

File Size 17.44K  /  2 Page

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    MTV16N50E MTV16N50E_D ON2670 MTV16N50E-D TV16N50E

ETC
Motorola, Inc
ON Semiconductor
Part No. MTV16N50E MTV16N50E_D ON2670 MTV16N50E-D TV16N50E
OCR Text ...M N-Channel Enhancement-Mode Silicon Gate (R) D N-Channel G CASE 433-01, Style 2 D3PAK Surface Mount S MAXIMUM RATINGS (TC = 25C unless otherwise noted) Rating Drain-to-Source Voltage Drain-to-Gate Voltage (RGS = 1.0 M) Gate...
Description 16 A, 500 V, 0.4 ohm, N-CHANNEL, Si, POWER, MOSFET
From old datasheet system
TMOS POWER FET 16 AMPERES 500 VOLTS RDS(on) = 0.40 OHM
TMOS E-FET Power Field Effect Transistor D3PAK for Surface Mount N-Channel Enhancement - Mode Silicon Gate

File Size 275.97K  /  10 Page

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For silicon-bridge Found Datasheets File :: 4151    Search Time::1.187ms    
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