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  RSB6.8CS Datasheet PDF File

For RSB6.8CS Found Datasheets File :: 150+       Page :: | 1 | 2 | 3 | 4 | <5> | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |   

    RSB6.8F2FH RSB6.8F2FHT106

ROHM
Part No. RSB6.8F2FH RSB6.8F2FHT106
Description Bi-directional zener Diode (corresponds to AEC-Q101)

File Size 718.47K  /  4 Page

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HUA FENG CIRCUIT





    RSB6.8JS2FHT2R

ROHM
Part No. RSB6.8JS2FHT2R
Description Low capacitance Zener Diode (corresponds to AEC-Q101)

File Size 799.51K  /  6 Page

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    RSBC6.8CS

Rohm
Part No. RSBC6.8CS
Description Bi direction ESD Protection diode

File Size 1,025.30K  /  4 Page

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Part No. ML501-8CS
Description 8 CHANNEL READ WRITE AMPLIFIER CIRCUIT, PDSO32

File Size 235.28K  /  8 Page

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    RSAC6.8CS

Rohm
Part No. RSAC6.8CS
Description Ultra Low Capacitance ESD Protection Diode

File Size 1,129.52K  /  4 Page

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    BCR8CS BCR8

POWEREX[Powerex Power Semiconductors]
MITSUBISHI[Mitsubishi Electric Semiconductor]
Part No. BCR8CS BCR8
Description MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE

File Size 74.96K  /  5 Page

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    Mitsubishi Electric Corporation
Part No. BCR8CS-12 BCR8CS-8
Description Integrated Gate Bipolar Transistor (IGBT) Modules: 250V

File Size 146.51K  /  11 Page

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    BCR8CS BCR8

Powerex Power Semiconductors
Mitsubishi Electric Semiconductor
Part No. BCR8CS BCR8
Description MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE
MEDIUM POWER USE NON-INSULATED TYPE/ PLANAR PASSIVATION TYPE

File Size 85.43K  /  5 Page

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    Mitsubishi Electric Corporation
Part No. BCR8CS
Description MITSUBISHI SEMICONDUCTOR (TRIAC) MEDIUM POWER USE NON-INSULATED TYPE, PLANAR PASSIVATION TYPE

File Size 92.95K  /  5 Page

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    TE Connectivity, Ltd.
Part No. BCR8CS-12
Description TRIAC|600V V(DRM)|8A I(T)RMS|TO-263AB 可控硅| 600V的五(DRM)的| 8A条口(T)的有效值|63AB

File Size 118.82K  /  11 Page

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For RSB6.8CS Found Datasheets File :: 150+       Page :: | 1 | 2 | 3 | 4 | <5> | 6 | 7 | 8 | 9 | 10 | 11 | 12 | 13 | 14 | 15 |   

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