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TOSHIBA
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| Part No. |
SSM6E03TU
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| OCR Text |
...pulse i dp (note 1) -3.6 a q2 absolute maximum ratings (ta = 25c) characteristics symbol rating unit drain-source voltage v ds ...p d (note 2) 0.5 w channel temperature t ch 150 c storage temperature range t stg ? 55 to 15... |
| Description |
Multi-chip discrete device (P-ch N-ch)
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| File Size |
221.10K /
8 Page |
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it Online |
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MS KENNEDY CORP
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| Part No. |
MSK3003
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| OCR Text |
...urce leakage current n-channel (q2,q4,q6) total gate charge gate-source charge gate-drain charge turn-on delay time ...p-channel (q1,q3,q5) total gate charge gate-source charge gate-drain charge turn... |
| Description |
10 A, 55 V, 0.15 ohm, 6 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET
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| File Size |
138.27K /
5 Page |
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it Online |
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TOSHIBA
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| Part No. |
SSM6N57NU
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| OCR Text |
... 25 = 25 = 25 ) ) ) ) (q1,q2 common) (q1,q2 common) (q1,q2 common) (q1,q2 common) characteristics drain-source voltage gate-source vol...p d p d t ch t stg rating 30 12 4 10 1 2 150 -55 to 150 unit v a w w note: using continuous... |
| Description |
Small-signal MOSFET 2 in 1
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| File Size |
230.68K /
9 Page |
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it Online |
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VISAY[Vishay Siliconix]
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| Part No. |
SI1867DL
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| OCR Text |
...N CIRCUITS
Si1867DL
2, 3 VOUT Q2 6 6 C1 Time ( mS) 12 10 8 6 4 2 Ci 1 R2 R2 GND 0 0 2 4 R2 (kW) Note: For R2 switching variations with oth...p-channel) @ 1 A rDS(on) () VON/OFF = 1.5 V, VIN = 2.5 V, ID = 0.5 A VON/OFF = 1.5 V, VIN = 1.8 V, I... |
| Description |
1.5 Amp 120/240Vac 16 PIN DIP Package
Load Switch with Level-Shift
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| File Size |
67.84K /
5 Page |
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it Online |
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Renesas Electronics Corporation
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| Part No. |
NE55410GR-T3-AZ
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| OCR Text |
...erent fet?s (q1 : p out = 2 w, q2 : p out = 10 w) in one package ? over 25 db gain available by connecting two fet?s in series : g l (q1) = 13.5 db typ. (v ds = 28 v, i dset (q1) = 20 ma, f = 2 140 mhz) : g l (q2) = 11.0 db ... |
| Description |
2 CHANNEL, S BAND, Si, N-CHANNEL, RF POWER, MOSFET
N-CHANNEL SILICON POWER LDMOS FET FOR 2 W 10 W VHF to L-BAND SINGLE-END POWER AMPLIFIER
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| File Size |
307.65K /
15 Page |
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it Online |
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Fairchild Semiconductor, Corp.
FAIRCHILD[Fairchild Semiconductor]
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| Part No. |
FDS8333C
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| OCR Text |
...= 200 m @ V GS = -4.5 V
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Q2
* * *
Low gate charge High performance trench technology for extremely low RDS(ON). High power and ...P(pk), PEAK TRANSIENT POWER (W) RDS(ON) LIMIT ID , DRAIN CURRENT (A) 10 100s 1ms 10ms 100ms 1 10s VG... |
| Description |
30V N & P-Channel PowerTrench MOSFETs 4.1 A, 30 V, 0.08 ohm, 2 CHANNEL, N AND P-CHANNEL, Si, POWER, MOSFET
30V N & P-Channel PowerTrench MOSFETs
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| File Size |
131.52K /
8 Page |
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it Online |
Download Datasheet |
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Price and Availability
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